HK1192796A1 - 具有改進電極構造的發光設備 - Google Patents

具有改進電極構造的發光設備

Info

Publication number
HK1192796A1
HK1192796A1 HK14105136.8A HK14105136A HK1192796A1 HK 1192796 A1 HK1192796 A1 HK 1192796A1 HK 14105136 A HK14105136 A HK 14105136A HK 1192796 A1 HK1192796 A1 HK 1192796A1
Authority
HK
Hong Kong
Prior art keywords
light
emitting device
electrode structures
improved electrode
improved
Prior art date
Application number
HK14105136.8A
Other languages
English (en)
Inventor
史蒂芬．
．列斯特
林朝坤
Original Assignee
株式會社東芝
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式會社東芝 filed Critical 株式會社東芝
Publication of HK1192796A1 publication Critical patent/HK1192796A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
HK14105136.8A 2008-09-09 2014-05-30 具有改進電極構造的發光設備 HK1192796A1 (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
TW97134499 2008-09-09
TW097135436A TWI394296B (zh) 2008-09-09 2008-09-16 具改良式電極結構之發光元件
US12/472,809 US8637891B2 (en) 2008-09-09 2009-05-27 Light-emitting device with improved electrode structures

Publications (1)

Publication Number Publication Date
HK1192796A1 true HK1192796A1 (zh) 2014-08-29

Family

ID=41798440

Family Applications (1)

Application Number Title Priority Date Filing Date
HK14105136.8A HK1192796A1 (zh) 2008-09-09 2014-05-30 具有改進電極構造的發光設備

Country Status (6)

Country Link
US (2) US8637891B2 (zh)
JP (2) JP2010067963A (zh)
KR (1) KR101136441B1 (zh)
HK (1) HK1192796A1 (zh)
MY (1) MY151538A (zh)
TW (1) TWI394296B (zh)

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* Cited by examiner, † Cited by third party
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TWI394296B (zh) 2008-09-09 2013-04-21 Bridgelux Inc 具改良式電極結構之發光元件
TWI491074B (zh) * 2008-10-01 2015-07-01 Formosa Epitaxy Inc Nitride-based semiconductor light-emitting element
TWI470824B (zh) * 2009-04-09 2015-01-21 Huga Optotech Inc 電極結構及其發光元件
KR101110937B1 (ko) 2010-05-17 2012-03-05 엘지이노텍 주식회사 질화물 반도체 발광소자
KR101138951B1 (ko) * 2010-08-23 2012-04-25 서울옵토디바이스주식회사 발광다이오드
TWI452730B (zh) * 2010-09-14 2014-09-11 Formosa Epitaxy Inc 發光二極體
JP2012138465A (ja) * 2010-12-27 2012-07-19 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法およびｉｉｉ族窒化物半導体発光素子、ランプ、電子機器、機械装置
KR101148189B1 (ko) 2011-01-04 2012-05-23 갤럭시아포토닉스 주식회사 핑거를 갖는 발광 다이오드 및 발광 다이오드 패키지
JP5652234B2 (ja) * 2011-02-07 2015-01-14 日亜化学工業株式会社 半導体発光素子
JP5541261B2 (ja) * 2011-03-23 2014-07-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
US20130285010A1 (en) * 2012-04-27 2013-10-31 Phostek, Inc. Stacked led device with posts in adhesive layer
KR102013363B1 (ko) * 2012-11-09 2019-08-22 서울바이오시스 주식회사 발광 소자 및 그것을 제조하는 방법
KR102070088B1 (ko) * 2013-06-17 2020-01-29 삼성전자주식회사 반도체 발광소자
TWI540753B (zh) * 2013-07-30 2016-07-01 隆達電子股份有限公司 發光二極體結構
TWI607548B (zh) * 2016-02-05 2017-12-01 Au Optronics Corp 自發光型顯示器

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JP3675003B2 (ja) 1995-10-27 2005-07-27 昭和電工株式会社 半導体発光素子
GB2331625B (en) * 1997-11-19 2003-02-26 Hassan Paddy Abdel Salam led Lamp
US6307218B1 (en) 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
US6614056B1 (en) 1999-12-01 2003-09-02 Cree Lighting Company Scalable led with improved current spreading structures
JP3576963B2 (ja) * 2000-11-24 2004-10-13 三菱電線工業株式会社 半導体発光素子
JP2002319704A (ja) 2001-04-23 2002-10-31 Matsushita Electric Works Ltd Ｌｅｄチップ
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JP2002353506A (ja) * 2001-05-23 2002-12-06 Sharp Corp 半導体発光素子およびその製造方法
SG118077A1 (en) 2001-06-21 2006-01-27 Univ Singapore Light emitting polymers and polymer light emittingdiodes
US6650018B1 (en) * 2002-05-24 2003-11-18 Axt, Inc. High power, high luminous flux light emitting diode and method of making same
JP2008135789A (ja) * 2002-05-27 2008-06-12 Nichia Chem Ind Ltd 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置
JP2004172189A (ja) * 2002-11-18 2004-06-17 Shiro Sakai 窒化物系半導体装置及びその製造方法
TW200414556A (en) * 2003-01-17 2004-08-01 Epitech Corp Ltd Light emitting diode having distributed electrodes
JP3939257B2 (ja) * 2003-02-10 2007-07-04 昭和電工株式会社 半導体装置の製造方法
EP1482566A3 (en) 2003-05-28 2004-12-08 Chang Hsiu Hen Light emitting diode electrode structure and full color light emitting diode formed by overlap cascaded die bonding
KR100576853B1 (ko) * 2003-12-18 2006-05-10 삼성전기주식회사 질화물 반도체 발광소자
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TWI291243B (en) * 2005-06-24 2007-12-11 Epistar Corp A semiconductor light-emitting device
JP4899825B2 (ja) * 2006-11-28 2012-03-21 日亜化学工業株式会社 半導体発光素子、発光装置
TWI375334B (en) 2007-06-11 2012-10-21 Bridgelux Inc Light-emitting device with improved electrode structures
JP2008091942A (ja) 2007-11-22 2008-04-17 Mitsubishi Cable Ind Ltd 窒化物半導体発光ダイオード
TWI394296B (zh) * 2008-09-09 2013-04-21 Bridgelux Inc 具改良式電極結構之發光元件

Also Published As

Publication number Publication date
TWI394296B (zh) 2013-04-21
JP5599489B2 (ja) 2014-10-01
KR101136441B1 (ko) 2012-04-19
US20140117404A1 (en) 2014-05-01
MY151538A (en) 2014-06-13
US8637891B2 (en) 2014-01-28
TW201011949A (en) 2010-03-16
JP2010067963A (ja) 2010-03-25
JP2013150018A (ja) 2013-08-01
US9324915B2 (en) 2016-04-26
KR20100030585A (ko) 2010-03-18
US20100059765A1 (en) 2010-03-11

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