HK1186572A1 - 圖像傳感器像素及其操作方法以及圖像傳感器 - Google Patents
圖像傳感器像素及其操作方法以及圖像傳感器Info
- Publication number
- HK1186572A1 HK1186572A1 HK13113887.4A HK13113887A HK1186572A1 HK 1186572 A1 HK1186572 A1 HK 1186572A1 HK 13113887 A HK13113887 A HK 13113887A HK 1186572 A1 HK1186572 A1 HK 1186572A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- image sensor
- operating
- same
- pixel
- sensor pixel
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161569743P | 2011-12-12 | 2011-12-12 | |
US13/476,784 US8937272B2 (en) | 2011-12-12 | 2012-05-21 | Vertical JFET source follower for small pixel CMOS image sensors |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1186572A1 true HK1186572A1 (zh) | 2014-03-14 |
Family
ID=48571111
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK13113887.4A HK1186572A1 (zh) | 2011-12-12 | 2013-12-13 | 圖像傳感器像素及其操作方法以及圖像傳感器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8937272B2 (zh) |
CN (1) | CN103165631B (zh) |
DE (1) | DE102012213085B4 (zh) |
HK (1) | HK1186572A1 (zh) |
TW (1) | TWI497697B (zh) |
WO (1) | WO2013089828A1 (zh) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8569806B2 (en) * | 2011-09-02 | 2013-10-29 | Hoon Kim | Unit pixel of image sensor and photo detector thereof |
US9520425B2 (en) | 2013-03-01 | 2016-12-13 | Semiconductor Components Industries, Llc | Image sensors with small pixels having high well capacity |
US9054007B2 (en) * | 2013-08-15 | 2015-06-09 | Omnivision Technologies, Inc. | Image sensor pixel cell with switched deep trench isolation structure |
US9496304B2 (en) | 2013-08-15 | 2016-11-15 | Omnivision Technologies, Inc. | Image sensor pixel cell with switched deep trench isolation structure |
US9231007B2 (en) | 2013-08-27 | 2016-01-05 | Semiconductor Components Industries, Llc | Image sensors operable in global shutter mode and having small pixels with high well capacity |
US9602750B2 (en) | 2014-11-25 | 2017-03-21 | Semiconductor Components Industries, Llc | Image sensor pixels having built-in variable gain feedback amplifier circuitry |
US9456157B2 (en) | 2014-11-25 | 2016-09-27 | Semiconductor Components Industries, Llc | Image sensor pixels having p-channel source follower transistors and increased photodiode charge storage capacity |
EP3278364B1 (en) * | 2015-03-31 | 2021-05-26 | Dartmouth College | Image sensor and image sensor pixel having jfet source follower |
WO2016178837A1 (en) * | 2015-05-07 | 2016-11-10 | Finscale Inc. | Semiconductor devices made of vertical planar elements and methods of their fabrication |
US9515116B1 (en) * | 2015-05-22 | 2016-12-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vertical transfer gate structure for a back-side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor using global shutter capture |
US9723578B2 (en) * | 2015-06-09 | 2017-08-01 | Cirrus Logic, Inc. | Random telegraph signal identification and measurement |
US9484373B1 (en) * | 2015-11-18 | 2016-11-01 | Omnivision Technologies, Inc. | Hard mask as contact etch stop layer in image sensors |
KR102466904B1 (ko) | 2016-01-12 | 2022-11-15 | 삼성전자주식회사 | 씨모스 이미지 센서 |
KR102664314B1 (ko) * | 2016-12-29 | 2024-05-14 | 삼성전자주식회사 | 이미지 센서 |
US9881964B1 (en) * | 2017-02-08 | 2018-01-30 | Omnivision Technologies, Inc. | Image sensor with inverted source follower |
CN108630713B (zh) | 2017-03-17 | 2020-11-27 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
US10225498B2 (en) * | 2017-05-16 | 2019-03-05 | Bae Systems Information And Electronic Systems Integration Inc. | pMOS/nMOS pixel design for night vision imaging sensor |
TW202005067A (zh) * | 2018-05-25 | 2020-01-16 | 原相科技股份有限公司 | 改善背照式全域快門效率的結構 |
TWI691098B (zh) * | 2018-11-19 | 2020-04-11 | 力晶積成電子製造股份有限公司 | 影像感測器及其製造方法 |
CN109904272B (zh) * | 2019-01-23 | 2021-02-09 | 杭州电子科技大学 | 一种高转换增益和低串扰的像素探测器 |
CN110534537B (zh) * | 2019-08-30 | 2021-10-29 | 西安电子科技大学 | 一种cmos图像传感器像素结构及其制作方法 |
KR20220064787A (ko) | 2020-11-12 | 2022-05-19 | 삼성전자주식회사 | 이미지 센서 및 이를 포함하는 전자 시스템 |
CN113629090A (zh) * | 2021-08-17 | 2021-11-09 | 思特威(上海)电子科技股份有限公司 | 一种像素、图像传感器及其制备方法、图像采集装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5563429A (en) | 1994-06-14 | 1996-10-08 | Nikon Corp. | Solid state imaging device |
JP3697769B2 (ja) | 1995-02-24 | 2005-09-21 | 株式会社ニコン | 光電変換素子及び光電変換装置 |
US5625210A (en) | 1995-04-13 | 1997-04-29 | Eastman Kodak Company | Active pixel sensor integrated with a pinned photodiode |
JPH11164210A (ja) | 1997-11-28 | 1999-06-18 | Nikon Corp | 動き検出用固体撮像装置 |
JP4586452B2 (ja) | 2004-08-03 | 2010-11-24 | 株式会社ニコン | 固体撮像装置 |
JP2006210680A (ja) | 2005-01-28 | 2006-08-10 | Nikon Corp | 固体撮像素子 |
KR100851495B1 (ko) | 2007-05-14 | 2008-08-08 | 매그나칩 반도체 유한회사 | Jfet 및 수직적으로 집적된 리셋 다이오드를 갖는이미지 센서의 소형 픽셀 |
US8471310B2 (en) | 2011-01-11 | 2013-06-25 | Aptina Imaging Corporation | Image sensor pixels with back-gate-modulated vertical transistor |
-
2012
- 2012-05-21 US US13/476,784 patent/US8937272B2/en active Active
- 2012-07-20 TW TW101126385A patent/TWI497697B/zh not_active IP Right Cessation
- 2012-07-24 WO PCT/US2012/047929 patent/WO2013089828A1/en active Application Filing
- 2012-07-25 DE DE102012213085.3A patent/DE102012213085B4/de not_active Expired - Fee Related
- 2012-07-27 CN CN201210264628.3A patent/CN103165631B/zh active Active
-
2013
- 2013-12-13 HK HK13113887.4A patent/HK1186572A1/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI497697B (zh) | 2015-08-21 |
US8937272B2 (en) | 2015-01-20 |
DE102012213085A1 (de) | 2013-06-13 |
DE102012213085B4 (de) | 2020-04-09 |
CN103165631B (zh) | 2016-01-13 |
US20130146747A1 (en) | 2013-06-13 |
TW201324753A (zh) | 2013-06-16 |
WO2013089828A1 (en) | 2013-06-20 |
CN103165631A (zh) | 2013-06-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20230731 |