HK1170274A1 - Method for treating diamond material and product obtained - Google Patents

Method for treating diamond material and product obtained

Info

Publication number
HK1170274A1
HK1170274A1 HK12110916.6A HK12110916A HK1170274A1 HK 1170274 A1 HK1170274 A1 HK 1170274A1 HK 12110916 A HK12110916 A HK 12110916A HK 1170274 A1 HK1170274 A1 HK 1170274A1
Authority
HK
Hong Kong
Prior art keywords
product obtained
diamond material
treating diamond
treating
product
Prior art date
Application number
HK12110916.6A
Other languages
English (en)
Chinese (zh)
Inventor
Harpreet Kaur Dhillon
Sarah Louise Geoghegan
Daniel James Twitchen
Original Assignee
Element Six Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0911075A external-priority patent/GB0911075D0/en
Priority claimed from GB0917219A external-priority patent/GB0917219D0/en
Priority claimed from GBGB1003613.5A external-priority patent/GB201003613D0/en
Priority claimed from GBGB1005573.9A external-priority patent/GB201005573D0/en
Priority claimed from GBGB1007728.7A external-priority patent/GB201007728D0/en
Application filed by Element Six Technologies Ltd filed Critical Element Six Technologies Ltd
Publication of HK1170274A1 publication Critical patent/HK1170274A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/28—After-treatment, e.g. purification, irradiation, separation or recovery
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Adornments (AREA)
HK12110916.6A 2009-06-26 2012-10-30 Method for treating diamond material and product obtained HK1170274A1 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
GB0911075A GB0911075D0 (en) 2009-06-26 2009-06-26 Diamond material
GB0917219A GB0917219D0 (en) 2009-10-01 2009-10-01 Diamond material
GBGB1003613.5A GB201003613D0 (en) 2010-03-04 2010-03-04 Diamond material
GBGB1005573.9A GB201005573D0 (en) 2010-04-01 2010-04-01 Diamond material
GBGB1007728.7A GB201007728D0 (en) 2010-05-10 2010-05-10 Diamond material
PCT/EP2010/059080 WO2010149776A1 (fr) 2009-06-26 2010-06-25 Procédé pour le traitement d'un matériau en diamant et produit obtenu

Publications (1)

Publication Number Publication Date
HK1170274A1 true HK1170274A1 (en) 2013-02-22

Family

ID=42494498

Family Applications (1)

Application Number Title Priority Date Filing Date
HK12110916.6A HK1170274A1 (en) 2009-06-26 2012-10-30 Method for treating diamond material and product obtained

Country Status (11)

Country Link
EP (4) EP2446071B1 (fr)
JP (8) JP5368634B2 (fr)
CN (5) CN102575380B (fr)
CA (4) CA2765898C (fr)
HK (1) HK1170274A1 (fr)
IL (4) IL217012A (fr)
MY (3) MY157153A (fr)
RU (5) RU2540624C2 (fr)
SG (5) SG176889A1 (fr)
TR (1) TR201816224T4 (fr)
WO (4) WO2010149775A1 (fr)

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US9068257B2 (en) * 2009-06-26 2015-06-30 Element Six Technologies Limited Diamond material
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TWI804596B (zh) * 2018-04-24 2023-06-11 美商戴蒙創新公司 螢光鑽石材料及製造其之方法
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JP7158966B2 (ja) * 2018-09-14 2022-10-24 株式会社東芝 ダイヤモンド基板、量子デバイス、量子システム、及び、ダイヤモンド基板の製造方法
CN109813700B (zh) * 2019-01-23 2021-04-02 太原科技大学 一种金刚石本征缺陷扩散表征方法
GB201904435D0 (en) 2019-03-29 2019-05-15 Element Six Tech Ltd Single crystal synthetic diamond material
WO2020232140A1 (fr) * 2019-05-14 2020-11-19 The Regents Of The University Of California Optimisation de semi-conducteur à large bande interdite pour hyperpolarisation
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CN110395727B (zh) * 2019-07-30 2020-11-24 中国电子科技集团公司第十三研究所 色心金刚石制备方法及色心金刚石
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CN116981801A (zh) * 2021-03-31 2023-10-31 住友电气工业株式会社 单晶金刚石以及具备该单晶金刚石的金刚石复合体
JP7251042B2 (ja) * 2021-04-28 2023-04-04 住友電工ハードメタル株式会社 ダイヤモンドの窒素濃度の測定方法およびダイヤモンドの窒素濃度の測定装置
CN113753889B (zh) * 2021-09-22 2022-12-20 铜仁学院 一种只含nv-光学色心的金刚石及其合成方法
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Also Published As

Publication number Publication date
EP2446071A1 (fr) 2012-05-02
IL217011A0 (en) 2012-02-29
RU2540611C2 (ru) 2015-02-10
SG176933A1 (en) 2012-01-30
SG10201405892YA (en) 2014-11-27
JP5891564B2 (ja) 2016-03-23
RU2011151856A (ru) 2013-08-10
IL217009A0 (en) 2012-02-29
CN102471923A (zh) 2012-05-23
MY159945A (en) 2017-02-15
IL217012A (en) 2016-03-31
IL217012A0 (en) 2012-02-29
JP5877428B2 (ja) 2016-03-08
EP2446070B1 (fr) 2018-08-08
IL217011A (en) 2015-08-31
JP2012530676A (ja) 2012-12-06
CN102575379B (zh) 2015-06-03
CN104630882B (zh) 2018-03-30
SG177261A1 (en) 2012-02-28
CN102471923B (zh) 2014-08-27
WO2010149775A1 (fr) 2010-12-29
MY160529A (en) 2017-03-15
CN104630882A (zh) 2015-05-20
JP2015155377A (ja) 2015-08-27
EP2446069B1 (fr) 2018-08-08
WO2010149779A1 (fr) 2010-12-29
RU2011151979A (ru) 2013-08-10
JP5567669B2 (ja) 2014-08-06
CN102656296B (zh) 2015-11-25
JP2012530674A (ja) 2012-12-06
CA2765901C (fr) 2014-08-12
IL217010A0 (en) 2012-02-29
RU2537857C2 (ru) 2015-01-10
JP2014166956A (ja) 2014-09-11
MY157153A (en) 2016-05-13
CA2765808A1 (fr) 2010-12-29
TR201816224T4 (tr) 2018-11-21
RU2540624C2 (ru) 2015-02-10
JP5974345B2 (ja) 2016-08-23
WO2010149777A1 (fr) 2010-12-29
RU2011151873A (ru) 2013-08-10
IL217010A (en) 2015-08-31
JP2012530677A (ja) 2012-12-06
RU2580916C1 (ru) 2016-04-10
JP2015134722A (ja) 2015-07-27
JP5368634B2 (ja) 2013-12-18
CN102575379A (zh) 2012-07-11
RU2011151983A (ru) 2013-08-10
CA2765804C (fr) 2014-07-29
CA2765804A1 (fr) 2010-12-29
CN102656296A (zh) 2012-09-05
WO2010149776A1 (fr) 2010-12-29
EP2446072B1 (fr) 2018-02-21
CA2765808C (fr) 2013-07-30
SG177298A1 (en) 2012-02-28
IL217009A (en) 2016-04-21
JP2012530675A (ja) 2012-12-06
JP5874932B2 (ja) 2016-03-02
RU2497981C2 (ru) 2013-11-10
CA2765898A1 (fr) 2010-12-29
EP2446071B1 (fr) 2015-07-29
JP2015145338A (ja) 2015-08-13
EP2446070A1 (fr) 2012-05-02
CN102575380A (zh) 2012-07-11
SG176889A1 (en) 2012-01-30
EP2446069A1 (fr) 2012-05-02
CA2765898C (fr) 2015-09-15
CA2765901A1 (fr) 2010-12-29
JP6028307B2 (ja) 2016-11-16
CN102575380B (zh) 2016-01-06
EP2446072A1 (fr) 2012-05-02

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