HK1164531A1 - Dynamic leakage control for memory arrays - Google Patents
Dynamic leakage control for memory arraysInfo
- Publication number
- HK1164531A1 HK1164531A1 HK12104747.4A HK12104747A HK1164531A1 HK 1164531 A1 HK1164531 A1 HK 1164531A1 HK 12104747 A HK12104747 A HK 12104747A HK 1164531 A1 HK1164531 A1 HK 1164531A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- memory arrays
- leakage control
- dynamic leakage
- dynamic
- control
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/355,389 US8134874B2 (en) | 2009-01-16 | 2009-01-16 | Dynamic leakage control for memory arrays |
PCT/US2010/021191 WO2010083411A1 (en) | 2009-01-16 | 2010-01-15 | Dynamic leakage control for memory arrays |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1164531A1 true HK1164531A1 (en) | 2012-09-21 |
Family
ID=41716377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK12104747.4A HK1164531A1 (en) | 2009-01-16 | 2012-05-15 | Dynamic leakage control for memory arrays |
Country Status (7)
Country | Link |
---|---|
US (1) | US8134874B2 (ja) |
EP (1) | EP2387786B1 (ja) |
JP (1) | JP2012515411A (ja) |
KR (1) | KR101296001B1 (ja) |
CN (1) | CN102334165B (ja) |
HK (1) | HK1164531A1 (ja) |
WO (1) | WO2010083411A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI511153B (zh) * | 2009-12-21 | 2015-12-01 | Advanced Risc Mach Ltd | 在半導體裝置中降低漏電流 |
JP5539241B2 (ja) * | 2010-09-30 | 2014-07-02 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
US9110643B2 (en) * | 2012-06-11 | 2015-08-18 | Arm Limited | Leakage current reduction in an integrated circuit |
US8897054B2 (en) * | 2013-02-18 | 2014-11-25 | Intel Mobile Communications GmbH | ROM device with keepers |
US9542984B2 (en) * | 2013-04-08 | 2017-01-10 | SK Hynix Inc. | Semiconductor memory apparatus and operation method using the same |
KR20150006693A (ko) | 2013-07-09 | 2015-01-19 | 삼성전자주식회사 | 입력 버퍼의 프로세스 변화 보상 회로 및 이의 동작 방법 |
US9501079B2 (en) * | 2013-11-01 | 2016-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Data retention voltage clamp |
EP3125417B1 (en) * | 2014-03-27 | 2020-05-13 | AutoNetworks Technologies, Ltd. | Power source control device and power source control method |
US10141045B2 (en) | 2016-12-15 | 2018-11-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dual rail device with power detector for controlling power to first and second power domains |
US10879898B2 (en) | 2018-01-23 | 2020-12-29 | Samsung Electronics Co., Ltd. | Power gating circuit for holding data in logic block |
US10691195B2 (en) * | 2018-02-28 | 2020-06-23 | Qualcomm Incorporated | Selective coupling of memory to voltage rails based on operating mode of processor |
US11984151B2 (en) | 2021-07-09 | 2024-05-14 | Stmicroelectronics International N.V. | Adaptive bit line overdrive control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM) |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3315842B2 (ja) * | 1995-09-26 | 2002-08-19 | 富士通株式会社 | 半導体集積回路装置 |
JPH10214122A (ja) * | 1996-11-27 | 1998-08-11 | Yamaha Corp | 降圧回路および集積回路 |
JP2002111470A (ja) * | 2000-10-03 | 2002-04-12 | Hitachi Ltd | 半導体装置 |
JP2004241021A (ja) * | 2003-02-04 | 2004-08-26 | Fujitsu Ltd | 記憶装置およびリーク電流低減方法 |
US7020041B2 (en) | 2003-12-18 | 2006-03-28 | Intel Corporation | Method and apparatus to clamp SRAM supply voltage |
CN1658097A (zh) * | 2004-02-19 | 2005-08-24 | 哈尔滨工业大学固泰电子有限责任公司 | 一种喇叭工作参数的调节方法 |
US7177219B1 (en) * | 2005-07-22 | 2007-02-13 | Infineon Technologies Ag | Disabling clocked standby mode based on device temperature |
DE102005045952B3 (de) | 2005-09-26 | 2007-01-25 | Infineon Technologies Ag | Verfahren zur Spannungsversorgung einer Bitleitung und entsprechend ausgestaltete Speicheranordnung |
JP2007122814A (ja) * | 2005-10-28 | 2007-05-17 | Oki Electric Ind Co Ltd | 半導体集積回路及びリーク電流低減方法 |
KR200413740Y1 (ko) * | 2005-12-08 | 2006-04-13 | 백남칠 | 살균기능을 가진 충전식 공공 이용 보청기 |
TW200727588A (en) | 2006-01-11 | 2007-07-16 | Richtek Techohnology Corp | Voltage-supply apparatus and control method thereof |
WO2007127922A1 (en) | 2006-04-28 | 2007-11-08 | Mosaid Technologies Corporation | Sram leakage reduction circuit |
CN200973089Y (zh) * | 2006-05-25 | 2007-11-07 | 吉林大学 | 地下金属管线探测仪发射机 |
US7292495B1 (en) | 2006-06-29 | 2007-11-06 | Freescale Semiconductor, Inc. | Integrated circuit having a memory with low voltage read/write operation |
US7400545B2 (en) | 2006-08-31 | 2008-07-15 | Freescale Semiconductor, Inc. | Storage circuit with efficient sleep mode and method |
US7447101B2 (en) | 2006-12-22 | 2008-11-04 | Fujitsu Limited | PG-gated data retention technique for reducing leakage in memory cells |
CN201023954Y (zh) * | 2007-03-12 | 2008-02-20 | 合肥易捷特光电科技有限公司 | 振动给料装置 |
-
2009
- 2009-01-16 US US12/355,389 patent/US8134874B2/en active Active
-
2010
- 2010-01-15 KR KR1020117018610A patent/KR101296001B1/ko active IP Right Grant
- 2010-01-15 WO PCT/US2010/021191 patent/WO2010083411A1/en active Application Filing
- 2010-01-15 JP JP2011546388A patent/JP2012515411A/ja active Pending
- 2010-01-15 EP EP20100700790 patent/EP2387786B1/en active Active
- 2010-01-15 CN CN201080009322.2A patent/CN102334165B/zh active Active
-
2012
- 2012-05-15 HK HK12104747.4A patent/HK1164531A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20110111477A (ko) | 2011-10-11 |
KR101296001B1 (ko) | 2013-08-14 |
CN102334165B (zh) | 2014-12-24 |
US8134874B2 (en) | 2012-03-13 |
EP2387786B1 (en) | 2015-04-22 |
US20100182850A1 (en) | 2010-07-22 |
JP2012515411A (ja) | 2012-07-05 |
WO2010083411A1 (en) | 2010-07-22 |
CN102334165A (zh) | 2012-01-25 |
EP2387786A1 (en) | 2011-11-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20220119 |