HK1164531A1 - Dynamic leakage control for memory arrays - Google Patents

Dynamic leakage control for memory arrays

Info

Publication number
HK1164531A1
HK1164531A1 HK12104747.4A HK12104747A HK1164531A1 HK 1164531 A1 HK1164531 A1 HK 1164531A1 HK 12104747 A HK12104747 A HK 12104747A HK 1164531 A1 HK1164531 A1 HK 1164531A1
Authority
HK
Hong Kong
Prior art keywords
memory arrays
leakage control
dynamic leakage
dynamic
control
Prior art date
Application number
HK12104747.4A
Other languages
English (en)
Chinese (zh)
Inventor
Shinye Shiu
Kaenel Vincent R Von
Original Assignee
Apple Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Apple Inc filed Critical Apple Inc
Publication of HK1164531A1 publication Critical patent/HK1164531A1/xx

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
HK12104747.4A 2009-01-16 2012-05-15 Dynamic leakage control for memory arrays HK1164531A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/355,389 US8134874B2 (en) 2009-01-16 2009-01-16 Dynamic leakage control for memory arrays
PCT/US2010/021191 WO2010083411A1 (en) 2009-01-16 2010-01-15 Dynamic leakage control for memory arrays

Publications (1)

Publication Number Publication Date
HK1164531A1 true HK1164531A1 (en) 2012-09-21

Family

ID=41716377

Family Applications (1)

Application Number Title Priority Date Filing Date
HK12104747.4A HK1164531A1 (en) 2009-01-16 2012-05-15 Dynamic leakage control for memory arrays

Country Status (7)

Country Link
US (1) US8134874B2 (xx)
EP (1) EP2387786B1 (xx)
JP (1) JP2012515411A (xx)
KR (1) KR101296001B1 (xx)
CN (1) CN102334165B (xx)
HK (1) HK1164531A1 (xx)
WO (1) WO2010083411A1 (xx)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI511153B (zh) * 2009-12-21 2015-12-01 Advanced Risc Mach Ltd 在半導體裝置中降低漏電流
JP5539241B2 (ja) * 2010-09-30 2014-07-02 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US9110643B2 (en) * 2012-06-11 2015-08-18 Arm Limited Leakage current reduction in an integrated circuit
US8897054B2 (en) * 2013-02-18 2014-11-25 Intel Mobile Communications GmbH ROM device with keepers
US9542984B2 (en) * 2013-04-08 2017-01-10 SK Hynix Inc. Semiconductor memory apparatus and operation method using the same
KR20150006693A (ko) 2013-07-09 2015-01-19 삼성전자주식회사 입력 버퍼의 프로세스 변화 보상 회로 및 이의 동작 방법
US9501079B2 (en) * 2013-11-01 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Data retention voltage clamp
EP3125417B1 (en) * 2014-03-27 2020-05-13 AutoNetworks Technologies, Ltd. Power source control device and power source control method
US10141045B2 (en) 2016-12-15 2018-11-27 Taiwan Semiconductor Manufacturing Co., Ltd. Dual rail device with power detector for controlling power to first and second power domains
US10879898B2 (en) 2018-01-23 2020-12-29 Samsung Electronics Co., Ltd. Power gating circuit for holding data in logic block
US10691195B2 (en) * 2018-02-28 2020-06-23 Qualcomm Incorporated Selective coupling of memory to voltage rails based on operating mode of processor
US11984151B2 (en) 2021-07-09 2024-05-14 Stmicroelectronics International N.V. Adaptive bit line overdrive control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3315842B2 (ja) * 1995-09-26 2002-08-19 富士通株式会社 半導体集積回路装置
JPH10214122A (ja) * 1996-11-27 1998-08-11 Yamaha Corp 降圧回路および集積回路
JP2002111470A (ja) * 2000-10-03 2002-04-12 Hitachi Ltd 半導体装置
JP2004241021A (ja) * 2003-02-04 2004-08-26 Fujitsu Ltd 記憶装置およびリーク電流低減方法
US7020041B2 (en) 2003-12-18 2006-03-28 Intel Corporation Method and apparatus to clamp SRAM supply voltage
CN1658097A (zh) * 2004-02-19 2005-08-24 哈尔滨工业大学固泰电子有限责任公司 一种喇叭工作参数的调节方法
US7177219B1 (en) * 2005-07-22 2007-02-13 Infineon Technologies Ag Disabling clocked standby mode based on device temperature
DE102005045952B3 (de) 2005-09-26 2007-01-25 Infineon Technologies Ag Verfahren zur Spannungsversorgung einer Bitleitung und entsprechend ausgestaltete Speicheranordnung
JP2007122814A (ja) * 2005-10-28 2007-05-17 Oki Electric Ind Co Ltd 半導体集積回路及びリーク電流低減方法
KR200413740Y1 (ko) * 2005-12-08 2006-04-13 백남칠 살균기능을 가진 충전식 공공 이용 보청기
TW200727588A (en) 2006-01-11 2007-07-16 Richtek Techohnology Corp Voltage-supply apparatus and control method thereof
WO2007127922A1 (en) 2006-04-28 2007-11-08 Mosaid Technologies Corporation Sram leakage reduction circuit
CN200973089Y (zh) * 2006-05-25 2007-11-07 吉林大学 地下金属管线探测仪发射机
US7292495B1 (en) 2006-06-29 2007-11-06 Freescale Semiconductor, Inc. Integrated circuit having a memory with low voltage read/write operation
US7400545B2 (en) 2006-08-31 2008-07-15 Freescale Semiconductor, Inc. Storage circuit with efficient sleep mode and method
US7447101B2 (en) 2006-12-22 2008-11-04 Fujitsu Limited PG-gated data retention technique for reducing leakage in memory cells
CN201023954Y (zh) * 2007-03-12 2008-02-20 合肥易捷特光电科技有限公司 振动给料装置

Also Published As

Publication number Publication date
KR20110111477A (ko) 2011-10-11
KR101296001B1 (ko) 2013-08-14
CN102334165B (zh) 2014-12-24
US8134874B2 (en) 2012-03-13
EP2387786B1 (en) 2015-04-22
US20100182850A1 (en) 2010-07-22
JP2012515411A (ja) 2012-07-05
WO2010083411A1 (en) 2010-07-22
CN102334165A (zh) 2012-01-25
EP2387786A1 (en) 2011-11-23

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20220119