HK1144493A1 - 用於具有槽屏蔽電極的半導體器件的接觸結構和方法 - Google Patents

用於具有槽屏蔽電極的半導體器件的接觸結構和方法

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Publication number
HK1144493A1
HK1144493A1 HK10110749.1A HK10110749A HK1144493A1 HK 1144493 A1 HK1144493 A1 HK 1144493A1 HK 10110749 A HK10110749 A HK 10110749A HK 1144493 A1 HK1144493 A1 HK 1144493A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
contact structure
shield electrode
trench shield
trench
Prior art date
Application number
HK10110749.1A
Other languages
English (en)
Inventor
‧伯克
‧格裡瓦納
‧溫卡特拉曼
Original Assignee
半導體元件工業有限責任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體元件工業有限責任公司 filed Critical 半導體元件工業有限責任公司
Publication of HK1144493A1 publication Critical patent/HK1144493A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
HK10110749.1A 2008-11-14 2010-11-18 用於具有槽屏蔽電極的半導體器件的接觸結構和方法 HK1144493A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/271,030 US8362548B2 (en) 2008-11-14 2008-11-14 Contact structure for semiconductor device having trench shield electrode and method

Publications (1)

Publication Number Publication Date
HK1144493A1 true HK1144493A1 (zh) 2011-02-18

Family

ID=42171298

Family Applications (1)

Application Number Title Priority Date Filing Date
HK10110749.1A HK1144493A1 (zh) 2008-11-14 2010-11-18 用於具有槽屏蔽電極的半導體器件的接觸結構和方法

Country Status (4)

Country Link
US (1) US8362548B2 (zh)
CN (1) CN101740612B (zh)
HK (1) HK1144493A1 (zh)
TW (1) TWI470800B (zh)

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US7807536B2 (en) * 2006-02-10 2010-10-05 Fairchild Semiconductor Corporation Low resistance gate for power MOSFET applications and method of manufacture
JP5136674B2 (ja) * 2010-07-12 2013-02-06 株式会社デンソー 半導体装置およびその製造方法
US8466513B2 (en) * 2011-06-13 2013-06-18 Semiconductor Components Industries, Llc Semiconductor device with enhanced mobility and method
US8921184B2 (en) 2012-05-14 2014-12-30 Semiconductor Components Industries, Llc Method of making an electrode contact structure and structure therefor
US9029215B2 (en) 2012-05-14 2015-05-12 Semiconductor Components Industries, Llc Method of making an insulated gate semiconductor device having a shield electrode structure
US9455205B2 (en) * 2012-10-09 2016-09-27 Infineon Technologies Ag Semiconductor devices and processing methods
US9099419B2 (en) 2012-10-09 2015-08-04 Infineon Technologies Ag Test method and test arrangement
US8951867B2 (en) * 2012-12-21 2015-02-10 Alpha And Omega Semiconductor Incorporated High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices
US8748976B1 (en) * 2013-03-06 2014-06-10 Texas Instruments Incorporated Dual RESURF trench field plate in vertical MOSFET
KR102156130B1 (ko) * 2014-04-10 2020-09-15 삼성전자주식회사 반도체 소자 형성 방법
CN105304619A (zh) * 2014-05-28 2016-02-03 株洲南车时代电气股份有限公司 一种igbt衬板结构及其制作方法
US9960234B2 (en) * 2014-10-07 2018-05-01 Semiconductor Components Industries, Llc Method of forming a semiconductor device and structure therefor
JP6458994B2 (ja) * 2015-03-30 2019-01-30 サンケン電気株式会社 半導体装置
DE102015108440B3 (de) * 2015-05-28 2016-10-06 Infineon Technologies Ag Streifenförmige elektrodenstruktur einschliesslich eines hauptteiles mit einer feldelektrode und eines die elektrodenstruktur abschliessenden endteiles
CN108155229A (zh) * 2017-12-22 2018-06-12 中国科学院微电子研究所 一种栅极部分变窄的绝缘栅双极晶体管
CN109037337A (zh) * 2018-06-28 2018-12-18 华为技术有限公司 一种功率半导体器件及制造方法
US10600905B1 (en) * 2018-09-11 2020-03-24 Semiconductor Components Industries, Llc Trench MOSFET contacts
CN111200018B (zh) * 2018-11-19 2021-12-21 无锡华润上华科技有限公司 半导体器件及半导体器件制备方法
JP7210342B2 (ja) * 2019-03-18 2023-01-23 株式会社東芝 半導体装置
CN112864018B (zh) * 2019-11-28 2022-07-19 华润微电子（重庆）有限公司 沟槽型场效应晶体管结构及其制备方法
JP7256770B2 (ja) * 2020-03-16 2023-04-12 株式会社東芝 半導体装置
CN111261712A (zh) * 2020-03-25 2020-06-09 广东芯聚能半导体有限公司 沟槽型igbt器件结构
CN113497123A (zh) * 2020-04-01 2021-10-12 成都蓉矽半导体有限公司 一种具有更快切换速度的分离绝缘栅双极晶体管
JP7515324B2 (ja) 2020-07-10 2024-07-12 三菱電機株式会社 半導体装置
US11538934B2 (en) * 2021-01-12 2022-12-27 Sanken Electric Co., Ltd. Semiconductor device having a group of trenches in an active region and a mesa portion
US11552017B2 (en) * 2021-01-25 2023-01-10 Semiconductor Components Industries, Llc Trench gate transistors with low-resistance shield and gate interconnects
CN113555414B (zh) * 2021-07-20 2024-07-16 江苏中科汉韵半导体有限公司 沟槽型碳化硅场效应晶体管及其制备方法
CN116913780A (zh) * 2023-07-20 2023-10-20 瑶芯微电子科技(上海)有限公司 一种屏蔽栅沟槽型mos器件结构及其制备方法

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Also Published As

Publication number Publication date
US20100123187A1 (en) 2010-05-20
TW201036159A (en) 2010-10-01
CN101740612B (zh) 2014-02-26
US8362548B2 (en) 2013-01-29
CN101740612A (zh) 2010-06-16
TWI470800B (zh) 2015-01-21

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