HK1097350A1 - Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same and substrate - Google Patents
Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same and substrateInfo
- Publication number
- HK1097350A1 HK1097350A1 HK07104842.5A HK07104842A HK1097350A1 HK 1097350 A1 HK1097350 A1 HK 1097350A1 HK 07104842 A HK07104842 A HK 07104842A HK 1097350 A1 HK1097350 A1 HK 1097350A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- compound semiconductor
- nitride
- cleaning
- producing
- substrate
- Prior art date
Links
- 150000001875 compounds Chemical class 0.000 title 2
- 238000000034 method Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004140 cleaning Methods 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005144101 | 2005-05-17 | ||
JP2006060999A JP2006352075A (ja) | 2005-05-17 | 2006-03-07 | 窒化物系化合物半導体および化合物半導体の洗浄方法、これらの製造方法および基板 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1097350A1 true HK1097350A1 (en) | 2007-06-22 |
Family
ID=36794891
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK07104842.5A HK1097350A1 (en) | 2005-05-17 | 2007-05-07 | Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same and substrate |
Country Status (6)
Country | Link |
---|---|
US (2) | US7569493B2 (xx) |
EP (1) | EP1724821A3 (xx) |
JP (1) | JP2006352075A (xx) |
KR (1) | KR20060119807A (xx) |
HK (1) | HK1097350A1 (xx) |
TW (1) | TW200703719A (xx) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110018105A1 (en) * | 2005-05-17 | 2011-01-27 | Sumitomo Electric Industries, Ltd. | Nitride-based compound semiconductor device, compound semiconductor device, and method of producing the devices |
US7928447B2 (en) * | 2006-07-17 | 2011-04-19 | Sumitomo Electric Industries, Ltd. | GaN crystal substrate, fabricating method of GaN crystal substrate, and light-emitting device |
JP2008037705A (ja) * | 2006-08-07 | 2008-02-21 | Sumitomo Electric Ind Ltd | GaxIn1−xN基板とGaxIn1−xN基板の洗浄方法 |
KR100883332B1 (ko) * | 2007-05-23 | 2009-02-11 | 한국과학기술연구원 | 고품질 박막 증착을 위한 화학적 기판처리 방법 및 이를이용한 박막형 열전소재의 제조 방법 |
WO2009011100A1 (ja) * | 2007-07-19 | 2009-01-22 | Mitsubishi Chemical Corporation | Iii族窒化物半導体基板およびその洗浄方法 |
JP4903669B2 (ja) * | 2007-10-30 | 2012-03-28 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
KR101461673B1 (ko) * | 2008-02-11 | 2014-11-13 | 엘지전자 주식회사 | 반도체 레이저 다이오드 패키지 시스템 및 그 방법 |
DE112009000008T5 (de) * | 2008-03-14 | 2010-09-30 | Murata Mfg. Co., Ltd., Nagaokakyo-shi | Verfahren zum Glätten einer Elektrode, Verfahren zum Herstellen eines Keramiksubstrats und Keramiksubstrat |
JP5469840B2 (ja) | 2008-09-30 | 2014-04-16 | 昭和電工株式会社 | 炭化珪素単結晶基板の製造方法 |
US8226772B2 (en) | 2009-01-08 | 2012-07-24 | Micron Technology, Inc. | Methods of removing particles from over semiconductor substrates |
US7832090B1 (en) * | 2010-02-25 | 2010-11-16 | Unity Semiconductor Corporation | Method of making a planar electrode |
JP5767141B2 (ja) * | 2012-03-02 | 2015-08-19 | 株式会社サイオクス | 窒化ガリウム基板およびそれを用いた光デバイス |
JP2014042861A (ja) * | 2012-08-24 | 2014-03-13 | Sumitomo Electric Ind Ltd | 廃水を処理する方法 |
DE102013002637A1 (de) * | 2013-02-15 | 2014-08-21 | Freiberger Compound Materials Gmbh | Verfahren zur Herstellung eines Galliumarsenidsubstrats, Galliumarsenidsubstrat und Verwendung desselben |
JP2014210690A (ja) * | 2013-04-22 | 2014-11-13 | 住友電気工業株式会社 | 炭化珪素基板の製造方法 |
WO2015157957A1 (zh) * | 2014-04-17 | 2015-10-22 | 中国科学院微电子研究所 | 一种对硅酸镓镧晶片进行清洗的方法 |
CN109937470B (zh) | 2016-11-07 | 2023-05-16 | 应用材料公司 | 检测和分析来自半导体腔室部件的纳米颗粒的方法和设备 |
JP6934376B2 (ja) * | 2017-09-20 | 2021-09-15 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
WO2023139759A1 (ja) * | 2022-01-21 | 2023-07-27 | 住友電気工業株式会社 | Iii-v族化合物半導体単結晶基板およびその製造方法 |
CN115138632B (zh) * | 2022-08-31 | 2022-12-09 | 中国船舶重工集团公司第七0七研究所 | 一种提升石英谐振子q值的表面处理方法 |
JP7327714B1 (ja) * | 2022-09-16 | 2023-08-16 | 住友電気工業株式会社 | ヒ化ガリウム単結晶基板およびその製造方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5407869A (en) * | 1991-11-06 | 1995-04-18 | University Of Florida | Method of passivating group III-V surfaces |
JP2743823B2 (ja) * | 1994-03-25 | 1998-04-22 | 日本電気株式会社 | 半導体基板のウエット処理方法 |
US6029679A (en) | 1995-09-07 | 2000-02-29 | Hitachi, Ltd. | Semiconductor cleaning and production methods using a film repulsing fine particle contaminants |
US6701941B1 (en) * | 1997-05-09 | 2004-03-09 | Semitool, Inc. | Method for treating the surface of a workpiece |
DE69916728T2 (de) | 1998-08-28 | 2005-04-28 | Mitsubishi Materials Corp. | Verfahren zur Reinigung eines Halbleitersubstrats |
JP4516176B2 (ja) | 1999-04-20 | 2010-08-04 | 関東化学株式会社 | 電子材料用基板洗浄液 |
JP3674396B2 (ja) * | 1999-07-13 | 2005-07-20 | 三菱住友シリコン株式会社 | 半導体ウェーハの洗浄方法 |
EP1113485A3 (en) * | 1999-12-27 | 2005-08-31 | Matsushita Electric Industrial Co., Ltd. | Method for producing a semiconductor device |
US6417147B2 (en) * | 2000-02-29 | 2002-07-09 | Showa Denko K.K. | Cleaning agent composition, method for cleaning and use thereof |
US6927176B2 (en) * | 2000-06-26 | 2005-08-09 | Applied Materials, Inc. | Cleaning method and solution for cleaning a wafer in a single wafer process |
JP3994640B2 (ja) * | 2000-07-24 | 2007-10-24 | 松下電器産業株式会社 | 窒化ガリウム系化合物半導体成長用基板の洗浄方法 |
EP1389496A1 (en) * | 2001-05-22 | 2004-02-18 | Mitsubishi Chemical Corporation | Method for cleaning surface of substrate |
US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
JP4587605B2 (ja) | 2001-06-19 | 2010-11-24 | 星和電機株式会社 | 窒化ガリウム系化合物半導体発光素子の製造方法及び発光ダイオードの製造方法 |
JP3622200B2 (ja) * | 2001-07-02 | 2005-02-23 | ソニー株式会社 | 窒化物半導体の製造方法および半導体素子の製造方法 |
JP4350364B2 (ja) * | 2002-12-12 | 2009-10-21 | 昭和電工株式会社 | 洗浄剤組成物、半導体ウェーハの洗浄方法および製造方法 |
WO2004112093A2 (en) * | 2003-06-06 | 2004-12-23 | P.C.T. Systems, Inc. | Method and apparatus to process substrates with megasonic energy |
CN100552888C (zh) | 2003-10-27 | 2009-10-21 | 住友电气工业株式会社 | 氮化镓半导体衬底及其制造方法 |
FR2864457B1 (fr) * | 2003-12-31 | 2006-12-08 | Commissariat Energie Atomique | Procede de nettoyage par voie humide d'une surface notamment en un materiau de type silicium germanium. |
-
2006
- 2006-03-07 JP JP2006060999A patent/JP2006352075A/ja active Pending
- 2006-05-16 EP EP06010084A patent/EP1724821A3/en not_active Withdrawn
- 2006-05-17 US US11/435,129 patent/US7569493B2/en active Active
- 2006-05-17 TW TW095117506A patent/TW200703719A/zh unknown
- 2006-05-17 KR KR1020060044335A patent/KR20060119807A/ko not_active Application Discontinuation
-
2007
- 2007-05-07 HK HK07104842.5A patent/HK1097350A1/xx not_active IP Right Cessation
-
2009
- 2009-08-03 US US12/534,347 patent/US20090291567A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US7569493B2 (en) | 2009-08-04 |
US20060264011A1 (en) | 2006-11-23 |
KR20060119807A (ko) | 2006-11-24 |
EP1724821A3 (en) | 2008-10-29 |
US20090291567A1 (en) | 2009-11-26 |
TW200703719A (en) | 2007-01-16 |
EP1724821A2 (en) | 2006-11-22 |
JP2006352075A (ja) | 2006-12-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
HK1097350A1 (en) | Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same and substrate | |
GB0821002D0 (en) | Compound semiconductor epitaxial substrate and method for producing the same | |
HK1101220A1 (en) | Method for manufacturing nitride semiconductor substrate | |
HK1102243A1 (en) | Nitride semiconductor components and method of manufacturing the same | |
GB2427071B (en) | Semiconductor device having SiC substrate and method for manufacturing the same | |
HK1094279A1 (en) | Gallium nitride semiconductor substrate and process for producing the same | |
EP2090680A4 (en) | SAPHIRSUBSTRATE, NITRIDE-SEMICONDUCTOR LUMINESCENE ELEMENT USING THE SAPPHIRE SUBSTRATE AND METHOD FOR PRODUCING THE NITRIDE-SULPHIDE-LUMINESCENZEL MEMBER | |
EP1811548A4 (en) | SEMICONDUCTOR WAFER MANUFACTURING METHOD | |
GB2440484A8 (en) | Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing substrate | |
GB0705310D0 (en) | A group iii-v compound semiconductor and a method for producing the same | |
EP1837922A4 (en) | GAN-BASED SEMICONDUCTOR LIGHT ELEMENT AND METHOD FOR THE PRODUCTION THEREOF | |
EP1881535A4 (en) | NITRIDE-BASED SEMICONDUCTOR ELEMENT AND METHOD FOR THE PRODUCTION THEREOF | |
SG126899A1 (en) | Light-emitting device, method for making the same,and nitride semiconductor substrate | |
EP1939621A4 (en) | BIOCHIPSUBSTRATE, BIOCHIP, PROCESS FOR PREPARING THE BIOCHIPSUBSTRATE AND METHOD FOR PRODUCING THE BIOCHIP | |
EP1922769A4 (en) | GALLIUM NITRIDE-BASED COMPOSITION SEMICONDUCTOR LUMINOUS ELEMENT AND METHOD OF MANUFACTURING THEREOF | |
EP1763071A4 (en) | GAAS SUBSTRATE PURIFICATION METHOD, GAAS SUBSTRATE MANUFACTURING METHOD, PRODUCTION METHOD FOR EPITAXIAL SUBSTRATE AND GAAS WAFER | |
SG129398A1 (en) | Semiconductor wafer and process for producing a semiconductor wafer | |
GB2402941B (en) | Method for manufacturing substrate | |
EP1976004A4 (en) | SEMICONDUCTOR ELEMENT MOUNTING SUBSTRATE, SEMICONDUCTOR DEVICE USING THE SUBSTRATE, AND PROCESS FOR PRODUCING SEMICONDUCTOR ELEMENT MOUNTING SUBSTRATE | |
EP1900042A4 (en) | SEMICONDUCTOR COMPOUND LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME | |
GB2438567B (en) | Free-standing substrate, method for producing the same and semiconductor light-emitting device | |
TWI319893B (en) | Nitride semiconductor substrate, method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate | |
TWI315917B (en) | Nitride-based semiconductor device and production method thereof | |
EP1868251A4 (en) | SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME | |
EP1801854A4 (en) | METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20130517 |