HK1052252A1 - 含有嵌入式電容器的中介層的電子組件以及其生產方法 - Google Patents

含有嵌入式電容器的中介層的電子組件以及其生產方法

Info

Publication number
HK1052252A1
HK1052252A1 HK03104453.9A HK03104453A HK1052252A1 HK 1052252 A1 HK1052252 A1 HK 1052252A1 HK 03104453 A HK03104453 A HK 03104453A HK 1052252 A1 HK1052252 A1 HK 1052252A1
Authority
HK
Hong Kong
Prior art keywords
interposer
manufacture
methods
electronic assembly
embedded capacitors
Prior art date
Application number
HK03104453.9A
Other languages
English (en)
Inventor
Chakravorty Kishore
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of HK1052252A1 publication Critical patent/HK1052252A1/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/642Capacitive arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0556Disposition
    • H01L2224/05571Disposition the external layer being disposed in a recess of the surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05573Single external layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/14Structural association of two or more printed circuits
    • H05K1/141One or more single auxiliary printed circuits mounted on a main printed circuit, e.g. modules, adapters
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/16Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/162Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Structure Of Printed Boards (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Semiconductor Integrated Circuits (AREA)
HK03104453.9A 2000-07-31 2003-06-20 含有嵌入式電容器的中介層的電子組件以及其生產方法 HK1052252A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/628,705 US6970362B1 (en) 2000-07-31 2000-07-31 Electronic assemblies and systems comprising interposer with embedded capacitors
PCT/US2001/023719 WO2002011206A2 (en) 2000-07-31 2001-07-26 Electronic assembly comprising interposer with embedded capacitors and methods of manufacture

Publications (1)

Publication Number Publication Date
HK1052252A1 true HK1052252A1 (zh) 2003-09-05

Family

ID=24519977

Family Applications (1)

Application Number Title Priority Date Filing Date
HK03104453.9A HK1052252A1 (zh) 2000-07-31 2003-06-20 含有嵌入式電容器的中介層的電子組件以及其生產方法

Country Status (7)

Country Link
US (2) US6970362B1 (zh)
EP (1) EP1305830A2 (zh)
CN (1) CN100492629C (zh)
AU (1) AU2001280849A1 (zh)
HK (1) HK1052252A1 (zh)
MY (1) MY136263A (zh)
WO (1) WO2002011206A2 (zh)

Families Citing this family (176)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6970362B1 (en) * 2000-07-31 2005-11-29 Intel Corporation Electronic assemblies and systems comprising interposer with embedded capacitors
US6775150B1 (en) * 2000-08-30 2004-08-10 Intel Corporation Electronic assembly comprising ceramic/organic hybrid substrate with embedded capacitors and methods of manufacture
US6624501B2 (en) * 2001-01-26 2003-09-23 Fujitsu Limited Capacitor and semiconductor device
US20040246692A1 (en) * 2001-07-12 2004-12-09 Toshiya Satoh Electronic circuit component
DE10217565A1 (de) * 2002-04-19 2003-11-13 Infineon Technologies Ag Halbleiterbauelement mit integrierter gitterförmiger Kapazitätsstruktur
DE10228328A1 (de) * 2002-06-25 2004-01-22 Epcos Ag Elektronisches Bauelement mit einem Mehrlagensubstrat und Herstellungsverfahren
JP3835381B2 (ja) * 2002-09-04 2006-10-18 株式会社村田製作所 積層型電子部品
EP1589798A4 (en) * 2003-01-31 2007-11-28 Fujitsu Ltd MULTILAYER CONDUCTOR PLATE, ELECTRONIC DEVICE AND ASSEMBLY PROCESS
EP1601017A4 (en) * 2003-02-26 2009-04-29 Ibiden Co Ltd MULTILAYER PRINTED PCB
US20040231885A1 (en) * 2003-03-07 2004-11-25 Borland William J. Printed wiring boards having capacitors and methods of making thereof
US7327554B2 (en) * 2003-03-19 2008-02-05 Ngk Spark Plug Co., Ltd. Assembly of semiconductor device, interposer and substrate
KR20050112122A (ko) * 2003-04-07 2005-11-29 이비덴 가부시키가이샤 다층프린트배선판
CN1317923C (zh) * 2003-09-29 2007-05-23 财团法人工业技术研究院 一种具内藏电容的基板结构
WO2005036621A1 (ja) * 2003-10-08 2005-04-21 Zao Nikon Co., Ltd. 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法
US7566960B1 (en) 2003-10-31 2009-07-28 Xilinx, Inc. Interposing structure
JP4700332B2 (ja) * 2003-12-05 2011-06-15 イビデン株式会社 多層プリント配線板
US7132743B2 (en) * 2003-12-23 2006-11-07 Intel Corporation Integrated circuit package substrate having a thin film capacitor structure
JP4387231B2 (ja) * 2004-03-31 2009-12-16 新光電気工業株式会社 キャパシタ実装配線基板及びその製造方法
JP2005340647A (ja) * 2004-05-28 2005-12-08 Nec Compound Semiconductor Devices Ltd インターポーザ基板、半導体パッケージ及び半導体装置並びにそれらの製造方法
US7268419B2 (en) * 2004-06-17 2007-09-11 Apple Inc. Interposer containing bypass capacitors for reducing voltage noise in an IC device
US7446389B2 (en) * 2004-06-17 2008-11-04 Apple Inc. Semiconductor die package with internal bypass capacitors
US7391110B2 (en) * 2004-06-17 2008-06-24 Apple Inc. Apparatus for providing capacitive decoupling between on-die power and ground conductors
EP1771880A1 (en) 2004-07-19 2007-04-11 Koninklijke Philips Electronics N.V. Electronic device comprising an integrated circuit and a capacitance element
US7501698B2 (en) * 2004-10-26 2009-03-10 Kabushiki Kaisha Toshiba Method and system for an improved power distribution network for use with a semiconductor device
TWI260056B (en) * 2005-02-01 2006-08-11 Phoenix Prec Technology Corp Module structure having an embedded chip
US20060220167A1 (en) * 2005-03-31 2006-10-05 Intel Corporation IC package with prefabricated film capacitor
US7355836B2 (en) * 2005-06-07 2008-04-08 Intel Corporation Array capacitor for decoupling multiple voltage rails
US20060289976A1 (en) * 2005-06-23 2006-12-28 Intel Corporation Pre-patterned thin film capacitor and method for embedding same in a package substrate
US7719103B2 (en) * 2005-06-30 2010-05-18 Semiconductor Energy Laboratory Co., Ltd Semiconductor device
US7435627B2 (en) * 2005-08-11 2008-10-14 International Business Machines Corporation Techniques for providing decoupling capacitance
US7456459B2 (en) * 2005-10-21 2008-11-25 Georgia Tech Research Corporation Design of low inductance embedded capacitor layer connections
US7576995B2 (en) * 2005-11-04 2009-08-18 Entorian Technologies, Lp Flex circuit apparatus and method for adding capacitance while conserving circuit board surface area
KR20070048330A (ko) * 2005-11-04 2007-05-09 삼성전자주식회사 칩형 전기 소자 및 이를 포함하는 표시 장치
JP2007165857A (ja) * 2005-11-18 2007-06-28 Nec System Technologies Ltd 多層配線基板およびその製造方法
US7692284B2 (en) * 2005-12-12 2010-04-06 Intel Corporation Package using array capacitor core
DE102005062932B4 (de) * 2005-12-29 2015-12-24 Polaris Innovations Ltd. Chip-Träger mit reduzierter Störsignalempfindlichkeit
US7579689B2 (en) * 2006-01-31 2009-08-25 Mediatek Inc. Integrated circuit package, and a method for producing an integrated circuit package having two dies with input and output terminals of integrated circuits of the dies directly addressable for testing of the package
US20070215962A1 (en) * 2006-03-20 2007-09-20 Knowles Elecronics, Llc Microelectromechanical system assembly and method for manufacturing thereof
US7510928B2 (en) 2006-05-05 2009-03-31 Tru-Si Technologies, Inc. Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques
US7619872B2 (en) * 2006-05-31 2009-11-17 Intel Corporation Embedded electrolytic capacitor
KR100778227B1 (ko) * 2006-08-23 2007-11-20 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
US7378733B1 (en) 2006-08-29 2008-05-27 Xilinx, Inc. Composite flip-chip package with encased components and method of fabricating same
US7656007B2 (en) * 2006-11-01 2010-02-02 Integrated Device Technology Inc. Package substrate with inserted discrete capacitors
EP1950806A1 (en) * 2006-11-30 2008-07-30 Matsushita Electric Industrial Co., Ltd. Interposer with built-in passive part
US8059423B2 (en) * 2007-02-06 2011-11-15 Sanmina-Sci Corporation Enhanced localized distributive capacitance for circuit boards
EP2115772A4 (en) 2007-02-12 2010-03-17 Kemet Electronics Corp PASSIVE ELECTRONIC DEVICE
US20080192452A1 (en) * 2007-02-12 2008-08-14 Randall Michael S Passive electronic device
US7911802B2 (en) * 2007-04-06 2011-03-22 Ibiden Co., Ltd. Interposer, a method for manufacturing the same and an electronic circuit package
US8476735B2 (en) * 2007-05-29 2013-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Programmable semiconductor interposer for electronic package and method of forming
JP2009027044A (ja) * 2007-07-20 2009-02-05 Taiyo Yuden Co Ltd 積層コンデンサ及びコンデンサ内蔵配線基板
US7733627B2 (en) * 2007-09-24 2010-06-08 Wan-Ling Yu Structure of embedded capacitor
US9941245B2 (en) * 2007-09-25 2018-04-10 Intel Corporation Integrated circuit packages including high density bump-less build up layers and a lesser density core or coreless substrate
US8115113B2 (en) * 2007-11-30 2012-02-14 Ibiden Co., Ltd. Multilayer printed wiring board with a built-in capacitor
US20090168391A1 (en) * 2007-12-27 2009-07-02 Kouichi Saitou Substrate for mounting device and method for producing the same, semiconductor module and method for producing the same, and portable apparatus provided with the same
US7605460B1 (en) 2008-02-08 2009-10-20 Xilinx, Inc. Method and apparatus for a power distribution system
JP2009252893A (ja) * 2008-04-03 2009-10-29 Elpida Memory Inc 半導体装置
US7786839B2 (en) * 2008-12-28 2010-08-31 Pratt & Whitney Rocketdyne, Inc. Passive electrical components with inorganic dielectric coating layer
KR20100084379A (ko) * 2009-01-16 2010-07-26 삼성전자주식회사 인쇄회로기판
FI20095110A0 (fi) * 2009-02-06 2009-02-06 Imbera Electronics Oy Elektroniikkamoduuli, jossa on EMI-suoja
US7923290B2 (en) * 2009-03-27 2011-04-12 Stats Chippac Ltd. Integrated circuit packaging system having dual sided connection and method of manufacture thereof
US20100276188A1 (en) * 2009-05-04 2010-11-04 Russell James V Method and apparatus for improving power gain and loss for interconect configurations
WO2014011232A1 (en) 2012-07-12 2014-01-16 Hsio Technologies, Llc Semiconductor socket with direct selective metalization
WO2010138493A1 (en) 2009-05-28 2010-12-02 Hsio Technologies, Llc High performance surface mount electrical interconnect
US9276336B2 (en) 2009-05-28 2016-03-01 Hsio Technologies, Llc Metalized pad to electrical contact interface
WO2011139619A1 (en) 2010-04-26 2011-11-10 Hsio Technologies, Llc Semiconductor device package adapter
WO2010147939A1 (en) 2009-06-17 2010-12-23 Hsio Technologies, Llc Semiconductor socket
US8912812B2 (en) 2009-06-02 2014-12-16 Hsio Technologies, Llc Compliant printed circuit wafer probe diagnostic tool
US9231328B2 (en) 2009-06-02 2016-01-05 Hsio Technologies, Llc Resilient conductive electrical interconnect
WO2010141295A1 (en) 2009-06-02 2010-12-09 Hsio Technologies, Llc Compliant printed flexible circuit
US9318862B2 (en) 2009-06-02 2016-04-19 Hsio Technologies, Llc Method of making an electronic interconnect
US9930775B2 (en) 2009-06-02 2018-03-27 Hsio Technologies, Llc Copper pillar full metal via electrical circuit structure
WO2010147934A1 (en) 2009-06-16 2010-12-23 Hsio Technologies, Llc Semiconductor die terminal
US8525346B2 (en) 2009-06-02 2013-09-03 Hsio Technologies, Llc Compliant conductive nano-particle electrical interconnect
US9184527B2 (en) 2009-06-02 2015-11-10 Hsio Technologies, Llc Electrical connector insulator housing
US8610265B2 (en) 2009-06-02 2013-12-17 Hsio Technologies, Llc Compliant core peripheral lead semiconductor test socket
WO2010141266A1 (en) 2009-06-02 2010-12-09 Hsio Technologies, Llc Compliant printed circuit peripheral lead semiconductor package
US9613841B2 (en) 2009-06-02 2017-04-04 Hsio Technologies, Llc Area array semiconductor device package interconnect structure with optional package-to-package or flexible circuit to package connection
US8988093B2 (en) 2009-06-02 2015-03-24 Hsio Technologies, Llc Bumped semiconductor wafer or die level electrical interconnect
US9196980B2 (en) 2009-06-02 2015-11-24 Hsio Technologies, Llc High performance surface mount electrical interconnect with external biased normal force loading
WO2010141297A1 (en) 2009-06-02 2010-12-09 Hsio Technologies, Llc Compliant printed circuit wafer level semiconductor package
US9603249B2 (en) 2009-06-02 2017-03-21 Hsio Technologies, Llc Direct metalization of electrical circuit structures
WO2012074963A1 (en) 2010-12-01 2012-06-07 Hsio Technologies, Llc High performance surface mount electrical interconnect
WO2011002709A1 (en) 2009-06-29 2011-01-06 Hsio Technologies, Llc Compliant printed circuit semiconductor tester interface
WO2010141313A1 (en) 2009-06-02 2010-12-09 Hsio Technologies, Llc Compliant printed circuit socket diagnostic tool
WO2010141311A1 (en) 2009-06-02 2010-12-09 Hsio Technologies, Llc Compliant printed circuit area array semiconductor device package
US8987886B2 (en) 2009-06-02 2015-03-24 Hsio Technologies, Llc Copper pillar full metal via electrical circuit structure
WO2010141296A1 (en) 2009-06-02 2010-12-09 Hsio Technologies, Llc Compliant printed circuit semiconductor package
US9276339B2 (en) 2009-06-02 2016-03-01 Hsio Technologies, Llc Electrical interconnect IC device socket
WO2012078493A1 (en) 2010-12-06 2012-06-14 Hsio Technologies, Llc Electrical interconnect ic device socket
WO2010141318A1 (en) 2009-06-02 2010-12-09 Hsio Technologies, Llc Compliant printed circuit peripheral lead semiconductor test socket
WO2012061008A1 (en) 2010-10-25 2012-05-10 Hsio Technologies, Llc High performance electrical circuit structure
WO2010141298A1 (en) 2009-06-02 2010-12-09 Hsio Technologies, Llc Composite polymer-metal electrical contacts
WO2014011226A1 (en) 2012-07-10 2014-01-16 Hsio Technologies, Llc Hybrid printed circuit assembly with low density main core and embedded high density circuit regions
US8803539B2 (en) 2009-06-03 2014-08-12 Hsio Technologies, Llc Compliant wafer level probe assembly
WO2010147782A1 (en) 2009-06-16 2010-12-23 Hsio Technologies, Llc Simulated wirebond semiconductor package
US20100327433A1 (en) * 2009-06-25 2010-12-30 Qualcomm Incorporated High Density MIM Capacitor Embedded in a Substrate
US8984748B2 (en) 2009-06-29 2015-03-24 Hsio Technologies, Llc Singulated semiconductor device separable electrical interconnect
TWI467610B (zh) * 2009-07-23 2015-01-01 Ind Tech Res Inst 電容結構
US8183678B2 (en) * 2009-08-04 2012-05-22 Amkor Technology Korea, Inc. Semiconductor device having an interposer
CN102648667B (zh) * 2009-09-15 2016-09-07 R&D电路股份有限公司 互连构造中改善功率增益及损耗的***板中的嵌入部件
US8634201B1 (en) * 2009-12-01 2014-01-21 City Labs, Inc. Radioisotope power source package for microelectronics
US8758067B2 (en) 2010-06-03 2014-06-24 Hsio Technologies, Llc Selective metalization of electrical connector or socket housing
US10159154B2 (en) 2010-06-03 2018-12-18 Hsio Technologies, Llc Fusion bonded liquid crystal polymer circuit structure
US9689897B2 (en) 2010-06-03 2017-06-27 Hsio Technologies, Llc Performance enhanced semiconductor socket
US9350093B2 (en) 2010-06-03 2016-05-24 Hsio Technologies, Llc Selective metalization of electrical connector or socket housing
US8624365B1 (en) * 2010-07-23 2014-01-07 Marvell International Ltd. Interposer based capacitors for semiconductor packaging
US20120020040A1 (en) * 2010-07-26 2012-01-26 Lin Paul T Package-to-package stacking by using interposer with traces, and or standoffs and solder balls
US9167694B2 (en) * 2010-11-02 2015-10-20 Georgia Tech Research Corporation Ultra-thin interposer assemblies with through vias
WO2012122142A2 (en) * 2011-03-07 2012-09-13 Hsio Technologies, Llc Selective metalization of electrical connector or socket housing
TWI439192B (zh) * 2011-05-12 2014-05-21 Fujikura Ltd 貫通配線基板、電子元件封裝體、及電子零件(一)
US20130134553A1 (en) * 2011-11-30 2013-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Interposer and semiconductor package with noise suppression features
US9912448B2 (en) * 2012-02-13 2018-03-06 Sentinel Connector Systems, Inc. Testing apparatus for a high speed communications jack and methods of operating the same
US20130242493A1 (en) * 2012-03-13 2013-09-19 Qualcomm Mems Technologies, Inc. Low cost interposer fabricated with additive processes
KR101472628B1 (ko) * 2012-07-02 2014-12-15 삼성전기주식회사 커패시터 내장형 기판
US9761520B2 (en) 2012-07-10 2017-09-12 Hsio Technologies, Llc Method of making an electrical connector having electrodeposited terminals
US9129935B1 (en) * 2012-10-05 2015-09-08 Altera Corporation Multi-chip packages with reduced power distribution network noise
US9035194B2 (en) * 2012-10-30 2015-05-19 Intel Corporation Circuit board with integrated passive devices
KR102032887B1 (ko) * 2012-12-10 2019-10-16 삼성전자 주식회사 반도체 패키지 및 반도체 패키지의 라우팅 방법
US20140167900A1 (en) 2012-12-14 2014-06-19 Gregorio R. Murtagian Surface-mount inductor structures for forming one or more inductors with substrate traces
KR101472638B1 (ko) * 2012-12-31 2014-12-15 삼성전기주식회사 수동소자 내장기판
US10667410B2 (en) 2013-07-11 2020-05-26 Hsio Technologies, Llc Method of making a fusion bonded circuit structure
US10506722B2 (en) 2013-07-11 2019-12-10 Hsio Technologies, Llc Fusion bonded liquid crystal polymer electrical circuit structure
US9370103B2 (en) 2013-09-06 2016-06-14 Qualcomm Incorported Low package parasitic inductance using a thru-substrate interposer
US9093295B2 (en) 2013-11-13 2015-07-28 Qualcomm Incorporated Embedded sheet capacitor
TWI529906B (zh) * 2013-12-09 2016-04-11 矽品精密工業股份有限公司 半導體封裝件之製法
US9129956B2 (en) * 2013-12-11 2015-09-08 Taiwan Semiconductor Manufacturing Company, Ltd. Device having multiple-layer pins in memory MUX1 layout
US11200997B2 (en) 2014-02-17 2021-12-14 City Labs, Inc. Semiconductor device with epitaxial liftoff layers for directly converting radioisotope emissions into electrical power
US10186339B2 (en) 2014-02-17 2019-01-22 City Labs, Inc. Semiconductor device for directly converting radioisotope emissions into electrical power
US9799419B2 (en) 2014-02-17 2017-10-24 City Labs, Inc. Tritium direct conversion semiconductor device for use with gallium arsenide or germanium substrates
US9425125B2 (en) 2014-02-20 2016-08-23 Altera Corporation Silicon-glass hybrid interposer circuitry
US10729001B2 (en) * 2014-08-31 2020-07-28 Skyworks Solutions, Inc. Devices and methods related to metallization of ceramic substrates for shielding applications
US20160095224A1 (en) * 2014-09-30 2016-03-31 Skyworks Solutions, Inc. Apparatus and methods related to ceramic device embedded in laminate substrate
US9583426B2 (en) 2014-11-05 2017-02-28 Invensas Corporation Multi-layer substrates suitable for interconnection between circuit modules
US9659850B2 (en) 2014-12-08 2017-05-23 Qualcomm Incorporated Package substrate comprising capacitor, redistribution layer and discrete coaxial connection
JP2016162904A (ja) * 2015-03-03 2016-09-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9755335B2 (en) 2015-03-18 2017-09-05 Hsio Technologies, Llc Low profile electrical interconnect with fusion bonded contact retention and solder wick reduction
US9971970B1 (en) 2015-04-27 2018-05-15 Rigetti & Co, Inc. Microwave integrated quantum circuits with VIAS and methods for making the same
CN104851860B (zh) * 2015-04-30 2018-03-13 华为技术有限公司 一种集成电路管芯及制造方法
JP6606355B2 (ja) * 2015-05-29 2019-11-13 キヤノン株式会社 情報処理装置、情報処理方法、及びプログラム
US10283492B2 (en) 2015-06-23 2019-05-07 Invensas Corporation Laminated interposers and packages with embedded trace interconnects
US10321575B2 (en) * 2015-09-01 2019-06-11 Qualcomm Incorporated Integrated circuit (IC) module comprising an integrated circuit (IC) package and an interposer with embedded passive components
US9852994B2 (en) 2015-12-14 2017-12-26 Invensas Corporation Embedded vialess bridges
US9852988B2 (en) 2015-12-18 2017-12-26 Invensas Bonding Technologies, Inc. Increased contact alignment tolerance for direct bonding
US20170308153A1 (en) * 2016-04-25 2017-10-26 Mediatek Inc. Power delivery system for multicore processor chip
US10446487B2 (en) 2016-09-30 2019-10-15 Invensas Bonding Technologies, Inc. Interface structures and methods for forming same
US10580735B2 (en) 2016-10-07 2020-03-03 Xcelsis Corporation Stacked IC structure with system level wiring on multiple sides of the IC die
CN108022905A (zh) * 2016-11-04 2018-05-11 超威半导体公司 使用多个金属层的转接板传输线
WO2018126052A1 (en) * 2016-12-29 2018-07-05 Invensas Bonding Technologies, Inc. Bonded structures with integrated passive component
US10276909B2 (en) 2016-12-30 2019-04-30 Invensas Bonding Technologies, Inc. Structure comprising at least a first element bonded to a carrier having a closed metallic channel waveguide formed therein
US10629577B2 (en) 2017-03-16 2020-04-21 Invensas Corporation Direct-bonded LED arrays and applications
WO2018183739A1 (en) 2017-03-31 2018-10-04 Invensas Bonding Technologies, Inc. Interface structures and methods for forming same
US11121301B1 (en) 2017-06-19 2021-09-14 Rigetti & Co, Inc. Microwave integrated quantum circuits with cap wafers and their methods of manufacture
US10361158B2 (en) * 2017-08-29 2019-07-23 Micron Technology, Inc. Integrated assemblies having structures along a first pitch coupled with structures along a second pitch different from the first pitch
US11156638B2 (en) * 2017-12-30 2021-10-26 Texas Instruments Incorporated Contactors with signal pins, ground pins, and short ground pins
US11169326B2 (en) 2018-02-26 2021-11-09 Invensas Bonding Technologies, Inc. Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects
US11357096B2 (en) 2018-07-05 2022-06-07 Intel Corporation Package substrate inductor having thermal interconnect structures
US11335620B2 (en) * 2018-07-13 2022-05-17 Intel Corporation Package inductor having thermal solution structures
US11515291B2 (en) 2018-08-28 2022-11-29 Adeia Semiconductor Inc. Integrated voltage regulator and passive components
WO2020093277A1 (zh) * 2018-11-07 2020-05-14 北京比特大陆科技有限公司 芯片及电器设备
KR102595864B1 (ko) * 2018-12-07 2023-10-30 삼성전자주식회사 반도체 패키지
US11037871B2 (en) 2019-02-21 2021-06-15 Kemet Electronics Corporation Gate drive interposer with integrated passives for wide band gap semiconductor devices
US10950688B2 (en) 2019-02-21 2021-03-16 Kemet Electronics Corporation Packages for power modules with integrated passives
US11901281B2 (en) * 2019-03-11 2024-02-13 Adeia Semiconductor Bonding Technologies Inc. Bonded structures with integrated passive component
US11202375B2 (en) * 2019-04-29 2021-12-14 Qualcomm Incorporated Surface mount passive component shorted together
US11404388B2 (en) * 2019-04-29 2022-08-02 Qualcomm Incorporated Surface mount passive component shorted together and a die
US11762200B2 (en) 2019-12-17 2023-09-19 Adeia Semiconductor Bonding Technologies Inc. Bonded optical devices
US11716117B2 (en) * 2020-02-14 2023-08-01 Texas Instruments Incorporated Circuit support structure with integrated isolation circuitry
TW202217377A (zh) 2020-07-06 2022-05-01 新加坡商光子智能私人有限公司 積體電路中介層、系統、裝置、製造積體電路中介層的方法、以及用於從多個節點向目的地傳輸資訊的方法與系統
KR20220051698A (ko) * 2020-10-19 2022-04-26 삼성전자주식회사 반도체 패키지
US20220173090A1 (en) * 2020-12-01 2022-06-02 Intel Corporation Integrated circuit assemblies
US11817442B2 (en) 2020-12-08 2023-11-14 Intel Corporation Hybrid manufacturing for integrated circuit devices and assemblies
US11756886B2 (en) 2020-12-08 2023-09-12 Intel Corporation Hybrid manufacturing of microeletronic assemblies with first and second integrated circuit structures
US20220367430A1 (en) * 2021-05-17 2022-11-17 Mediatek Inc. Semiconductor package structure
CN117560860A (zh) * 2022-08-04 2024-02-13 辉达公司 堆叠多个印刷电路板的方法和配置
US20240088015A1 (en) * 2022-09-08 2024-03-14 Samsung Electronics Co., Ltd. Integrated circuit devices including via capacitors
US20240203911A1 (en) * 2022-12-16 2024-06-20 Nxp Usa, Inc. Interposer with integrative passive components

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US755150A (en) * 1903-06-04 1904-03-22 Alphonse Major Water-supply.
US4567542A (en) 1984-04-23 1986-01-28 Nec Corporation Multilayer ceramic substrate with interlayered capacitor
US4926241A (en) 1988-02-19 1990-05-15 Microelectronics And Computer Technology Corporation Flip substrate for chip mount
EP0359513A3 (en) 1988-09-14 1990-12-19 Hitachi, Ltd. Semiconductor chip carrier and method of making it
US5027253A (en) 1990-04-09 1991-06-25 Ibm Corporation Printed circuit boards and cards having buried thin film capacitors and processing techniques for fabricating said boards and cards
US5060116A (en) 1990-04-20 1991-10-22 Grobman Warren D Electronics system with direct write engineering change capability
US5177594A (en) 1991-01-09 1993-01-05 International Business Machines Corporation Semiconductor chip interposer module with engineering change wiring and distributed decoupling capacitance
US5177670A (en) 1991-02-08 1993-01-05 Hitachi, Ltd. Capacitor-carrying semiconductor module
JP2966972B2 (ja) 1991-07-05 1999-10-25 株式会社日立製作所 半導体チップキャリアとそれを実装したモジュール及びそれを組み込んだ電子機器
US5867148A (en) 1991-07-12 1999-02-02 Hitachi, Ltd. Space-saving information processing apparatus
DE69300506T2 (de) 1992-04-06 1996-04-04 Nippon Electric Co Herstellungsverfahren von mehrlagigen keramischen Substraten.
US5800575A (en) 1992-04-06 1998-09-01 Zycon Corporation In situ method of forming a bypass capacitor element internally within a capacitive PCB
JPH05335183A (ja) 1992-05-28 1993-12-17 Murata Mfg Co Ltd 多層基板を備えた電子部品及びその製造方法
US5354955A (en) 1992-12-02 1994-10-11 International Business Machines Corporation Direct jump engineering change system
US5321583A (en) 1992-12-02 1994-06-14 Intel Corporation Electrically conductive interposer and array package concept for interconnecting to a circuit board
US5377139A (en) 1992-12-11 1994-12-27 Motorola, Inc. Process forming an integrated circuit
JP3325351B2 (ja) 1993-08-18 2002-09-17 株式会社東芝 半導体装置
US5523619A (en) 1993-11-03 1996-06-04 International Business Machines Corporation High density memory structure
JP3309522B2 (ja) 1993-11-15 2002-07-29 株式会社村田製作所 多層基板及びその製造方法
US5639989A (en) 1994-04-19 1997-06-17 Motorola Inc. Shielded electronic component assembly and method for making the same
US5469324A (en) 1994-10-07 1995-11-21 Storage Technology Corporation Integrated decoupling capacitive core for a printed circuit board and method of making same
JPH08167630A (ja) 1994-12-15 1996-06-25 Hitachi Ltd チップ接続構造
JPH08172274A (ja) 1994-12-20 1996-07-02 Murata Mfg Co Ltd セラミック多層基板
US5714801A (en) 1995-03-31 1998-02-03 Kabushiki Kaisha Toshiba Semiconductor package
US5818699A (en) 1995-07-05 1998-10-06 Kabushiki Kaisha Toshiba Multi-chip module and production method thereof
US5736448A (en) 1995-12-04 1998-04-07 General Electric Company Fabrication method for thin film capacitors
US5777345A (en) 1996-01-03 1998-07-07 Intel Corporation Multi-chip integrated circuit package
US5691568A (en) 1996-05-31 1997-11-25 Lsi Logic Corporation Wire bondable package design with maxium electrical performance and minimum number of layers
US5796587A (en) 1996-06-12 1998-08-18 International Business Machines Corporation Printed circut board with embedded decoupling capacitance and method for producing same
US5708296A (en) 1996-06-24 1998-01-13 Intel Corporation Power-ground plane for a C4 flip-chip substrate
US5745335A (en) 1996-06-27 1998-04-28 Gennum Corporation Multi-layer film capacitor structures and method
US5949654A (en) 1996-07-03 1999-09-07 Kabushiki Kaisha Toshiba Multi-chip module, an electronic device, and production method thereof
US5786630A (en) 1996-08-07 1998-07-28 Intel Corporation Multi-layer C4 flip-chip substrate
KR100677005B1 (ko) 1996-10-31 2007-01-31 라미나 세라믹스, 인크. 전자 집적 회로
JPH10163447A (ja) 1996-12-02 1998-06-19 Nec Corp 薄膜キャパシタ、その製造方法および電極の加工方法
WO1998039784A1 (en) 1997-03-06 1998-09-11 Sarnoff Corporation Ceramic multilayer printed circuit boards with embedded passive components
JP3882954B2 (ja) 1997-03-19 2007-02-21 Tdk株式会社 チップ型積層セラミックコンデンサ
US5889652A (en) 1997-04-21 1999-03-30 Intel Corporation C4-GT stand off rigid flex interposer
US5920120A (en) 1997-12-19 1999-07-06 Intel Corporation Assembly for dissipatating heat from a semiconductor chip wherein a stress on the semiconductor chip due to a thermally conductive member is partially relieved
US5991161A (en) 1997-12-19 1999-11-23 Intel Corporation Multi-chip land grid array carrier
US6072690A (en) 1998-01-15 2000-06-06 International Business Machines Corporation High k dielectric capacitor with low k sheathed signal vias
US6075427A (en) 1998-01-23 2000-06-13 Lucent Technologies Inc. MCM with high Q overlapping resonator
US5939782A (en) 1998-03-03 1999-08-17 Sun Microsystems, Inc. Package construction for integrated circuit chip with bypass capacitor
US6061228A (en) 1998-04-28 2000-05-09 Harris Corporation Multi-chip module having an integral capacitor element
AU6413199A (en) 1998-10-02 2000-04-26 Raytheon Company Embedded capacitor multi-chip modules
US6214445B1 (en) 1998-12-25 2001-04-10 Ngk Spark Plug Co., Ltd. Printed wiring board, core substrate, and method for fabricating the core substrate
US6097609A (en) 1998-12-30 2000-08-01 Intel Corporation Direct BGA socket
US6218729B1 (en) 1999-03-11 2001-04-17 Atmel Corporation Apparatus and method for an integrated circuit having high Q reactive components
US6183669B1 (en) 1999-03-25 2001-02-06 Murata Manufacturing Co., Ltd. Paste composition, circuit board using the same, ceramic green sheet, ceramic substrate, and method for manufacturing ceramic multilayer substrate
DE19929076A1 (de) 1999-06-25 2000-12-28 Aventis Pharma Gmbh Indanylsubstituierte Benzolcarbonamide, Verfahren zu ihrer Herstellung, ihre Verwendung als Medikament sowie sie enthaltende pharmazeutische Zubereitungen
JP2001035960A (ja) 1999-07-21 2001-02-09 Mitsubishi Electric Corp 半導体装置および製造方法
US6252761B1 (en) 1999-09-15 2001-06-26 National Semiconductor Corporation Embedded multi-layer ceramic capacitor in a low-temperature con-fired ceramic (LTCC) substrate
US6446317B1 (en) * 2000-03-31 2002-09-10 Intel Corporation Hybrid capacitor and method of fabrication therefor
US6452776B1 (en) 2000-04-06 2002-09-17 Intel Corporation Capacitor with defect isolation and bypass
US6407929B1 (en) * 2000-06-29 2002-06-18 Intel Corporation Electronic package having embedded capacitors and method of fabrication therefor
US6611419B1 (en) 2000-07-31 2003-08-26 Intel Corporation Electronic assembly comprising substrate with embedded capacitors
US6970362B1 (en) 2000-07-31 2005-11-29 Intel Corporation Electronic assemblies and systems comprising interposer with embedded capacitors
US6775150B1 (en) 2000-08-30 2004-08-10 Intel Corporation Electronic assembly comprising ceramic/organic hybrid substrate with embedded capacitors and methods of manufacture
US6532143B2 (en) * 2000-12-29 2003-03-11 Intel Corporation Multiple tier array capacitor
US6755150B2 (en) 2001-04-20 2004-06-29 Applied Materials Inc. Multi-core transformer plasma source

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