GR880100402A - Νεα βασικη υλη ημιαγωγων - Google Patents

Νεα βασικη υλη ημιαγωγων

Info

Publication number
GR880100402A
GR880100402A GR880100402A GR880100402A GR880100402A GR 880100402 A GR880100402 A GR 880100402A GR 880100402 A GR880100402 A GR 880100402A GR 880100402 A GR880100402 A GR 880100402A GR 880100402 A GR880100402 A GR 880100402A
Authority
GR
Greece
Prior art keywords
new basic
semiconductor material
conrtuction
semiconductors
basic material
Prior art date
Application number
GR880100402A
Other languages
English (en)
Inventor
Siegfried Birkle
Johann Dr Kammermaier
Gerhard Dr Rittmayer
Rolf Schulte
Albrecht Professor Winnacker
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of GR880100402A publication Critical patent/GR880100402A/el

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1604—Amorphous materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1. Νέα βασική ύλη ημιαγωγών. 2.1. Η νέα βασική ύλη ημιαγωγών ?α δύναται να παρασκευασ?εί κατά την τεχνολογία λεπτών στοιβάδων δια χρησιμοποιήσεως με?όδων (διεργασιών) ταινίας και ?α παρουσιάζουν ευκινησίαν φορέων φορτίου τουλάχιστον I CM2 V-1 S-1. 2.2. Κατά την εφεύρεσιν η βασική ύλη ημιαγωγών συνίσταται εκ λεπτών στοιβάδων αμόρφου, υδρογονούχου άν?ρακος (α-C:H) με ειδική ηλεκτρική αντίστασιν μεταξύ 101 και 108 Ω.CM και συγκέντρωσιν φορέων φορτίων (η και ρ) μεταξύ 1010 και 1018 cm-3, εκάστοτε εις την ?ερμοκρασία δωματίου. 2.3. Στοιχεία δομήσεως. ω
GR880100402A 1987-08-03 1988-06-21 Νεα βασικη υλη ημιαγωγων GR880100402A (el)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3725700A DE3725700A1 (de) 1987-08-03 1987-08-03 Neues halbleitergrundmaterial

Publications (1)

Publication Number Publication Date
GR880100402A true GR880100402A (el) 1989-05-25

Family

ID=6332956

Family Applications (1)

Application Number Title Priority Date Filing Date
GR880100402A GR880100402A (el) 1987-08-03 1988-06-21 Νεα βασικη υλη ημιαγωγων

Country Status (13)

Country Link
US (1) US5055421A (el)
EP (1) EP0362275B1 (el)
JP (1) JPH02504446A (el)
KR (1) KR970004837B1 (el)
CN (1) CN1012775B (el)
BR (1) BR8807641A (el)
DE (2) DE3725700A1 (el)
ES (1) ES2007979A6 (el)
GR (1) GR880100402A (el)
IN (1) IN169551B (el)
MY (1) MY103333A (el)
RU (1) RU1839713C (el)
WO (1) WO1989001237A1 (el)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0381110B1 (de) * 1989-02-01 1994-06-29 Siemens Aktiengesellschaft Schutzschicht für elektroaktive Passivierschichten
US5266409A (en) * 1989-04-28 1993-11-30 Digital Equipment Corporation Hydrogenated carbon compositions
US5099296A (en) * 1990-04-06 1992-03-24 Xerox Corporation Thin film transistor
EP0472054A1 (de) * 1990-08-20 1992-02-26 Siemens Aktiengesellschaft Photozelle mit amorphem, wasserstoffhaltigem Kohlenstoff
DE4027388A1 (de) * 1990-08-30 1992-03-05 Thomson Brandt Gmbh Videorecorder fuer ein fernsehsignal mit einem zusatzsignal
US5582880A (en) * 1992-03-27 1996-12-10 Canon Kabushiki Kaisha Method of manufacturing non-single crystal film and non-single crystal semiconductor device
US5281851A (en) * 1992-10-02 1994-01-25 Hewlett-Packard Company Integrated circuit packaging with reinforced leads
EP0617462B1 (de) * 1993-03-09 1999-04-28 Siemens Aktiengesellschaft Amorpher wasserstoffhaltiger Kohlenstoff
EP0644266A1 (de) * 1993-09-22 1995-03-22 Siemens Aktiengesellschaft Arbeitselektrode für ekektrodechemisch-enzymatische Sensorsysteme
US5562781A (en) * 1995-01-19 1996-10-08 Ohio University Amorphous, hydrogenated carbon (a-C:H) photovoltaic cell
DE19502862B4 (de) * 1995-01-30 2004-12-09 Infineon Technologies Ag Sensor auf FET-Basis
US5970907A (en) * 1997-01-27 1999-10-26 Canon Kabushiki Kaisha Plasma processing apparatus
US9305735B2 (en) 2007-09-28 2016-04-05 Brigham Young University Reinforced polymer x-ray window
EP2175695A1 (en) 2008-10-13 2010-04-14 Michel Tramontana Electroluminescent layer configuration and method for production thereof
US9174412B2 (en) 2011-05-16 2015-11-03 Brigham Young University High strength carbon fiber composite wafers for microfabrication
US9502206B2 (en) 2012-06-05 2016-11-22 Brigham Young University Corrosion-resistant, strong x-ray window
US20140127446A1 (en) * 2012-06-05 2014-05-08 Moxtek, Inc. Amorphous carbon and aluminum membrane
US20140140487A1 (en) * 2012-06-05 2014-05-22 Moxtek, Inc. Amorphous carbon and aluminum x-ray window

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848428A (ja) * 1981-09-17 1983-03-22 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体およびその作製方法
JPS5926906A (ja) * 1982-08-05 1984-02-13 Yukio Ichinose アモルフアス炭素材料

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3814983A (en) * 1972-02-07 1974-06-04 C Weissfloch Apparatus and method for plasma generation and material treatment with electromagnetic radiation
US4737379A (en) * 1982-09-24 1988-04-12 Energy Conversion Devices, Inc. Plasma deposited coatings, and low temperature plasma method of making same
US4630566A (en) * 1984-08-16 1986-12-23 Board Of Trustees Operating Michigan State University Microwave or UHF plasma improved apparatus
US4675265A (en) * 1985-03-26 1987-06-23 Fuji Electric Co., Ltd. Electrophotographic light-sensitive element with amorphous C overlayer
US4929322A (en) * 1985-09-30 1990-05-29 Union Carbide Corporation Apparatus and process for arc vapor depositing a coating in an evacuated chamber
DE3830430A1 (de) * 1987-09-11 1989-03-23 Japan Synthetic Rubber Co Ltd Verfahren zur herstellung von ueberzuegen
US4883686A (en) * 1988-05-26 1989-11-28 Energy Conversion Devices, Inc. Method for the high rate plasma deposition of high quality material

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848428A (ja) * 1981-09-17 1983-03-22 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体およびその作製方法
JPS5926906A (ja) * 1982-08-05 1984-02-13 Yukio Ichinose アモルフアス炭素材料

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
CLAIMS SEARCHED: ALL *
PATENT ABSTRACTS OF JAPAN, vol. 7, no. 132 (E-180)(1277), 9th June 1983; & JP-A-58 048 428 (HANDOUTAI ENERUGII KENKYUSHO K.K.) 22-03-1983 *
PATENT ABSTRACTS OF JAPAN, vol. 8, no. 114 (E-225)(1551), 26th May 1984; & JP-A-59 026 906 (YUKIO ICHINOSE) 13-02-1984 *
PHILOSOPHICAL MAGAZINE B, vol. 46, no. 5, 1982, pages 423-434, Taylor & Francis ltd, London, GB; D.I. JONES et al.: "Properties of hydrogenated amorphous carbon films and the effects of doping" *
THIN SOLID FILMS, vol. 136, no. 2, February 1986, pages 161-166, Elsevier Sequoia, NL; Z. HAS et al.: "Electrical properties of thin carbon films obtained by R.F. methane decomposition on an R.F. powered negatively self-biased electrode" *

Also Published As

Publication number Publication date
EP0362275B1 (de) 1993-12-22
CN1031298A (zh) 1989-02-22
KR970004837B1 (ko) 1997-04-04
JPH02504446A (ja) 1990-12-13
DE3725700A1 (de) 1989-02-16
RU1839713C (ru) 1993-12-30
KR890702252A (ko) 1989-12-23
CN1012775B (zh) 1991-06-05
EP0362275A1 (de) 1990-04-11
MY103333A (en) 1993-05-29
IN169551B (el) 1991-11-09
BR8807641A (pt) 1990-06-26
US5055421A (en) 1991-10-08
DE3886537D1 (de) 1994-02-03
ES2007979A6 (es) 1989-07-01
WO1989001237A1 (en) 1989-02-09

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