GB900334A - Passivating coatings on exposed semiconductor surfaces - Google Patents
Passivating coatings on exposed semiconductor surfacesInfo
- Publication number
- GB900334A GB900334A GB35736/60A GB3573660A GB900334A GB 900334 A GB900334 A GB 900334A GB 35736/60 A GB35736/60 A GB 35736/60A GB 3573660 A GB3573660 A GB 3573660A GB 900334 A GB900334 A GB 900334A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cathode
- al2o3
- exposed semiconductor
- sputtering
- semiconductor surfaces
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02189—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing zirconium, e.g. ZrO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
A semi-conductor such as silicon is coated with a layer of a dielectric compound such as SiO2, Al2O3, CeO2, Ta2O5, TiO2, ThO2, ZrO2 or MgF2 by a reactive sputtering process in which the metallic component of the dielectric compound forms the cathode and the other component forms the low pressure reacting gas. In an example, a coating of Al2O3 is formed in a silicon diode in an evacuated chamber by sputtering an aluminium cathode in an oxidizing atmosphere. Mixed dielectric coatings may be applied by sputtering material from a plurality of cathodes or from a single cathode consisting of a suitable alloy.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL257102D NL257102A (en) | 1960-10-18 | ||
GB35736/60A GB900334A (en) | 1960-10-18 | 1960-10-18 | Passivating coatings on exposed semiconductor surfaces |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB35736/60A GB900334A (en) | 1960-10-18 | 1960-10-18 | Passivating coatings on exposed semiconductor surfaces |
Publications (1)
Publication Number | Publication Date |
---|---|
GB900334A true GB900334A (en) | 1962-07-04 |
Family
ID=10381014
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB35736/60A Expired GB900334A (en) | 1960-10-18 | 1960-10-18 | Passivating coatings on exposed semiconductor surfaces |
Country Status (2)
Country | Link |
---|---|
GB (1) | GB900334A (en) |
NL (1) | NL257102A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3337438A (en) * | 1963-10-23 | 1967-08-22 | Bell Telephone Labor Inc | Stabilization of silicon semiconductor surfaces |
US3350222A (en) * | 1963-12-26 | 1967-10-31 | Ibm | Hermetic seal for planar transistors and method |
DE1619970A1 (en) * | 1966-10-10 | 1970-07-30 | Ibm | Process for the production of passivating thin layers with reduced material diffusion and with reduced ion migration |
FR2046848A1 (en) * | 1969-06-18 | 1971-03-12 | Matsushita Electronics Corp | |
DE1764560B1 (en) * | 1967-06-28 | 1971-11-25 | Hitachi Ltd | SEMICONDUCTOR COMPONENT WITH STABILIZING SURFACE INSULATION LAYER |
US4137141A (en) * | 1976-11-18 | 1979-01-30 | Loic Henry G | Process for producing a silicon nitride diffusion barrier on a semiconductor substrate, particularly III-V semiconductor substrates |
-
0
- NL NL257102D patent/NL257102A/xx unknown
-
1960
- 1960-10-18 GB GB35736/60A patent/GB900334A/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3337438A (en) * | 1963-10-23 | 1967-08-22 | Bell Telephone Labor Inc | Stabilization of silicon semiconductor surfaces |
US3350222A (en) * | 1963-12-26 | 1967-10-31 | Ibm | Hermetic seal for planar transistors and method |
DE1619970A1 (en) * | 1966-10-10 | 1970-07-30 | Ibm | Process for the production of passivating thin layers with reduced material diffusion and with reduced ion migration |
DE1764560B1 (en) * | 1967-06-28 | 1971-11-25 | Hitachi Ltd | SEMICONDUCTOR COMPONENT WITH STABILIZING SURFACE INSULATION LAYER |
FR2046848A1 (en) * | 1969-06-18 | 1971-03-12 | Matsushita Electronics Corp | |
US4137141A (en) * | 1976-11-18 | 1979-01-30 | Loic Henry G | Process for producing a silicon nitride diffusion barrier on a semiconductor substrate, particularly III-V semiconductor substrates |
Also Published As
Publication number | Publication date |
---|---|
NL257102A (en) | 1900-01-01 |
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