GB2434036A - A semiconductor device including semiconductor regions having differently strained channel regions and a method of manufacturing the same - Google Patents

A semiconductor device including semiconductor regions having differently strained channel regions and a method of manufacturing the same

Info

Publication number
GB2434036A
GB2434036A GB0708894A GB0708894A GB2434036A GB 2434036 A GB2434036 A GB 2434036A GB 0708894 A GB0708894 A GB 0708894A GB 0708894 A GB0708894 A GB 0708894A GB 2434036 A GB2434036 A GB 2434036A
Authority
GB
United Kingdom
Prior art keywords
regions
manufacturing
device including
same
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0708894A
Other languages
English (en)
Other versions
GB0708894D0 (en
Inventor
Wolfgang Buchholtz
Ekkehard Pruefer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102004052617A external-priority patent/DE102004052617B4/de
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of GB0708894D0 publication Critical patent/GB0708894D0/en
Publication of GB2434036A publication Critical patent/GB2434036A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
GB0708894A 2004-10-29 2007-05-09 A semiconductor device including semiconductor regions having differently strained channel regions and a method of manufacturing the same Withdrawn GB2434036A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102004052617A DE102004052617B4 (de) 2004-10-29 2004-10-29 Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement mit Halbleitergebieten, die unterschiedlich verformte Kanalgebiete aufweisen
US11/145,697 US20060094193A1 (en) 2004-10-29 2005-06-06 Semiconductor device including semiconductor regions having differently strained channel regions and a method of manufacturing the same
PCT/US2005/036779 WO2006049834A1 (en) 2004-10-29 2005-10-12 A semiconductor device including semiconductor regions having differently strained channel regions and a method of manufacturing the same

Publications (2)

Publication Number Publication Date
GB0708894D0 GB0708894D0 (en) 2007-06-20
GB2434036A true GB2434036A (en) 2007-07-11

Family

ID=35892524

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0708894A Withdrawn GB2434036A (en) 2004-10-29 2007-05-09 A semiconductor device including semiconductor regions having differently strained channel regions and a method of manufacturing the same

Country Status (4)

Country Link
JP (1) JP2008518476A (ja)
KR (1) KR20070069160A (ja)
GB (1) GB2434036A (ja)
WO (1) WO2006049834A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9449974B2 (en) 2007-03-20 2016-09-20 Sony Corporation Semiconductor device and method of manufacturing the same

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Publication number Priority date Publication date Assignee Title
US7675118B2 (en) * 2006-08-31 2010-03-09 International Business Machines Corporation Semiconductor structure with enhanced performance using a simplified dual stress liner configuration
JP2008071851A (ja) * 2006-09-13 2008-03-27 Sony Corp 半導体装置および半導体装置の製造方法
US7704840B2 (en) * 2006-12-15 2010-04-27 Advanced Micro Devices, Inc. Stress enhanced transistor and methods for its fabrication
DE102007063593B4 (de) * 2007-02-28 2009-02-12 Infineon Technologies Austria Ag Halbleiterbauelement
DE102007009914B4 (de) * 2007-02-28 2010-04-22 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement in Form eines Feldeffekttransistors mit einem Zwischenschichtdielektrikumsmaterial mit erhöhter innerer Verspannung und Verfahren zur Herstellung desselben
JP5387700B2 (ja) * 2007-03-20 2014-01-15 ソニー株式会社 半導体装置の製造方法
DE102007046849B4 (de) * 2007-09-29 2014-11-06 Advanced Micro Devices, Inc. Verfahren zur Herstellung von Gateelektrodenstrukturen mit großem ε nach der Transistorherstellung
JP5147471B2 (ja) * 2008-03-13 2013-02-20 パナソニック株式会社 半導体装置
US8133793B2 (en) 2008-05-16 2012-03-13 Sandisk 3D Llc Carbon nano-film reversible resistance-switchable elements and methods of forming the same
US8569730B2 (en) 2008-07-08 2013-10-29 Sandisk 3D Llc Carbon-based interface layer for a memory device and methods of forming the same
US7795679B2 (en) 2008-07-24 2010-09-14 International Business Machines Corporation Device structures with a self-aligned damage layer and methods for forming such device structures
US20100032639A1 (en) 2008-08-07 2010-02-11 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8835892B2 (en) 2008-10-30 2014-09-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same
US8421050B2 (en) 2008-10-30 2013-04-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same
US20110278529A1 (en) * 2010-05-14 2011-11-17 Huiwen Xu Memory employing diamond-like carbon resistivity-switchable material and methods of forming the same
US8421132B2 (en) * 2011-05-09 2013-04-16 International Business Machines Corporation Post-planarization UV curing of stress inducing layers in replacement gate transistor fabrication
US9172031B2 (en) 2012-05-11 2015-10-27 SK Hynix Inc. Resistive memory device
KR102022554B1 (ko) 2012-05-11 2019-09-18 에스케이하이닉스 주식회사 비휘발성 메모리 장치

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US6376888B1 (en) * 1999-04-30 2002-04-23 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US20040075148A1 (en) * 2000-12-08 2004-04-22 Yukihiro Kumagai Semiconductor device
US20040113217A1 (en) * 2002-12-12 2004-06-17 International Business Machines Corporation Stress inducing spacers
US20040124492A1 (en) * 2002-09-12 2004-07-01 Kouji Matsuo Semiconductor device and method of manufacturing the same
US20040212035A1 (en) * 2003-04-25 2004-10-28 Yee-Chia Yeo Strained-channel transistor and methods of manufacture

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6376888B1 (en) * 1999-04-30 2002-04-23 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US20040075148A1 (en) * 2000-12-08 2004-04-22 Yukihiro Kumagai Semiconductor device
US20040124492A1 (en) * 2002-09-12 2004-07-01 Kouji Matsuo Semiconductor device and method of manufacturing the same
US20040113217A1 (en) * 2002-12-12 2004-06-17 International Business Machines Corporation Stress inducing spacers
US20040212035A1 (en) * 2003-04-25 2004-10-28 Yee-Chia Yeo Strained-channel transistor and methods of manufacture

Non-Patent Citations (1)

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Title
Shimizu A et al.., "Local mechanical-stress control (LMC) a new technique for CMOS-performance enhancement", International Electron Devices Meeting 2001, IEDM Technical Digest , pp1941-1944 (2001) *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9449974B2 (en) 2007-03-20 2016-09-20 Sony Corporation Semiconductor device and method of manufacturing the same
US9881920B2 (en) 2007-03-20 2018-01-30 Sony Corporation Semiconductor device and method of manufacturing the same
US10269801B2 (en) 2007-03-20 2019-04-23 Sony Corporation Semiconductor device and method of manufacturing the same
US10559567B2 (en) 2007-03-20 2020-02-11 Sony Corporation Semiconductor device and method of manufacturing the same
US11011518B2 (en) 2007-03-20 2021-05-18 Sony Corporation Semiconductor device and method of manufacturing the same
US11664376B2 (en) 2007-03-20 2023-05-30 Sony Group Corporation Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
WO2006049834A1 (en) 2006-05-11
GB0708894D0 (en) 2007-06-20
KR20070069160A (ko) 2007-07-02
JP2008518476A (ja) 2008-05-29

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