GB2133621B - Junction field effect transistor - Google Patents
Junction field effect transistorInfo
- Publication number
- GB2133621B GB2133621B GB08334364A GB8334364A GB2133621B GB 2133621 B GB2133621 B GB 2133621B GB 08334364 A GB08334364 A GB 08334364A GB 8334364 A GB8334364 A GB 8334364A GB 2133621 B GB2133621 B GB 2133621B
- Authority
- GB
- United Kingdom
- Prior art keywords
- field effect
- effect transistor
- junction field
- junction
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08334364A GB2133621B (en) | 1983-01-11 | 1983-12-23 | Junction field effect transistor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB838300617A GB8300617D0 (en) | 1983-01-11 | 1983-01-11 | Junction field effect transistor |
GB08334364A GB2133621B (en) | 1983-01-11 | 1983-12-23 | Junction field effect transistor |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8334364D0 GB8334364D0 (en) | 1984-02-01 |
GB2133621A GB2133621A (en) | 1984-07-25 |
GB2133621B true GB2133621B (en) | 1987-02-04 |
Family
ID=26284879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08334364A Expired GB2133621B (en) | 1983-01-11 | 1983-12-23 | Junction field effect transistor |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2133621B (en) |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1279395A (en) * | 1968-10-11 | 1972-06-28 | Nat Res Dev | Improvements relating to field effect transistors |
FR2157740B1 (en) * | 1971-10-29 | 1976-10-29 | Thomson Csf | |
JPS524426B2 (en) * | 1973-04-20 | 1977-02-03 | ||
FR2294544A1 (en) * | 1974-12-13 | 1976-07-09 | Thomson Csf | MANUFACTURING PROCESS, IN AN INTEGRATED CIRCUIT, OF FIELD EFFECT TRANSISTORS INTENDED TO OPERATE AT VERY HIGH FREQUENCY, AND STRUCTURE OR DEVICES OBTAINED |
GB1563913A (en) * | 1975-12-12 | 1980-04-02 | Hughes Aircraft Co | Method of making schottky-barrier gallium arsenide field effect devices |
NL184552C (en) * | 1978-07-24 | 1989-08-16 | Philips Nv | SEMICONDUCTOR FOR HIGH VOLTAGES. |
GB2070858B (en) * | 1980-03-03 | 1985-02-06 | Raytheon Co | Shallow channel field effect transistor |
GB2094058B (en) * | 1981-03-03 | 1985-02-13 | Standard Telephones Cables Ltd | Fabricating integrated circuit field effect transistors |
-
1983
- 1983-12-23 GB GB08334364A patent/GB2133621B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB8334364D0 (en) | 1984-02-01 |
GB2133621A (en) | 1984-07-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |