GB2128026B - Transistors - Google Patents

Transistors

Info

Publication number
GB2128026B
GB2128026B GB08324869A GB8324869A GB2128026B GB 2128026 B GB2128026 B GB 2128026B GB 08324869 A GB08324869 A GB 08324869A GB 8324869 A GB8324869 A GB 8324869A GB 2128026 B GB2128026 B GB 2128026B
Authority
GB
United Kingdom
Prior art keywords
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08324869A
Other versions
GB8324869D0 (en
GB2128026A (en
Inventor
Leslie George Hipwood
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB08324869A priority Critical patent/GB2128026B/en
Publication of GB8324869D0 publication Critical patent/GB8324869D0/en
Publication of GB2128026A publication Critical patent/GB2128026A/en
Application granted granted Critical
Publication of GB2128026B publication Critical patent/GB2128026B/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/7606Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
GB08324869A 1982-10-01 1983-09-16 Transistors Expired GB2128026B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08324869A GB2128026B (en) 1982-10-01 1983-09-16 Transistors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8228096 1982-10-01
GB08324869A GB2128026B (en) 1982-10-01 1983-09-16 Transistors

Publications (3)

Publication Number Publication Date
GB8324869D0 GB8324869D0 (en) 1983-10-19
GB2128026A GB2128026A (en) 1984-04-18
GB2128026B true GB2128026B (en) 1986-03-26

Family

ID=26284004

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08324869A Expired GB2128026B (en) 1982-10-01 1983-09-16 Transistors

Country Status (1)

Country Link
GB (1) GB2128026B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4910562A (en) * 1982-04-26 1990-03-20 International Business Machines Corporation Field induced base transistor
GB8333130D0 (en) * 1983-12-12 1984-01-18 Gen Electric Co Plc Semiconductor devices
JPS62211948A (en) * 1986-03-13 1987-09-17 Fujitsu Ltd Hetero junction semiconductor device
US4926221A (en) * 1988-09-07 1990-05-15 At&T Bell Laboratories Bipolar hot electron transistor
US5206524A (en) * 1988-09-28 1993-04-27 At&T Bell Laboratories Heterostructure bipolar transistor
GB2261112B (en) * 1991-10-30 1995-06-28 Hitachi Europ Ltd Charge carrier source

Also Published As

Publication number Publication date
GB8324869D0 (en) 1983-10-19
GB2128026A (en) 1984-04-18

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930916