GB201100996D0 - Improved epitaxial layer - Google Patents
Improved epitaxial layerInfo
- Publication number
- GB201100996D0 GB201100996D0 GBGB1100996.6A GB201100996A GB201100996D0 GB 201100996 D0 GB201100996 D0 GB 201100996D0 GB 201100996 A GB201100996 A GB 201100996A GB 201100996 D0 GB201100996 D0 GB 201100996D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- epitaxial layer
- improved epitaxial
- improved
- layer
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/242—Stacked detectors, e.g. for depth information
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
- H01J40/16—Photoelectric discharge tubes not involving the ionisation of a gas having photo- emissive cathode, e.g. alkaline photoelectric cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1001029A GB2480223A (en) | 2010-01-22 | 2010-01-22 | Optical sensing system |
Publications (2)
Publication Number | Publication Date |
---|---|
GB201100996D0 true GB201100996D0 (en) | 2011-03-09 |
GB2480344A GB2480344A (en) | 2011-11-16 |
Family
ID=42045907
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1001029A Withdrawn GB2480223A (en) | 2010-01-22 | 2010-01-22 | Optical sensing system |
GB1100996A Withdrawn GB2480344A (en) | 2010-01-22 | 2011-01-21 | An epitaxial layer configured to detect at least two frequency ranges of incident photons |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1001029A Withdrawn GB2480223A (en) | 2010-01-22 | 2010-01-22 | Optical sensing system |
Country Status (2)
Country | Link |
---|---|
GB (2) | GB2480223A (en) |
WO (1) | WO2011089398A2 (en) |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1096028A (en) * | 1964-04-01 | 1967-12-20 | Emi Ltd | Improvements in or relating to photo-electron multiplier devices |
JPS6325983A (en) * | 1986-07-17 | 1988-02-03 | Fujitsu Ltd | Manufacture of infrared-ray detecting element |
JPH065719B2 (en) * | 1987-03-12 | 1994-01-19 | 工業技術院長 | Soft X-ray image sensor |
US5138416A (en) * | 1991-07-12 | 1992-08-11 | Xerox Corporation | Multi-color photosensitive element with heterojunctions |
US5352897A (en) * | 1992-03-16 | 1994-10-04 | Olympus Optical Co., Ltd. | Device for detecting X-rays |
US5671914A (en) * | 1995-11-06 | 1997-09-30 | Spire Corporation | Multi-band spectroscopic photodetector array |
WO2000077861A1 (en) * | 1999-06-14 | 2000-12-21 | Augusto Carlos J R P | Stacked wavelength-selective opto-electronic device |
US6407439B1 (en) * | 1999-08-19 | 2002-06-18 | Epitaxial Technologies, Llc | Programmable multi-wavelength detector array |
JP2004144678A (en) * | 2002-10-25 | 2004-05-20 | Arkray Inc | Manufacturing method for optical unit, optical sensor, multichannel light detection system, and optical unit |
JP4130815B2 (en) * | 2004-07-16 | 2008-08-06 | 松下電器産業株式会社 | Semiconductor light receiving element and manufacturing method thereof |
US20060138312A1 (en) * | 2004-12-22 | 2006-06-29 | Butterworth Mark M | Solid-state spectrophotomer |
-
2010
- 2010-01-22 GB GB1001029A patent/GB2480223A/en not_active Withdrawn
-
2011
- 2011-01-21 GB GB1100996A patent/GB2480344A/en not_active Withdrawn
- 2011-01-21 WO PCT/GB2011/000081 patent/WO2011089398A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
GB2480344A (en) | 2011-11-16 |
GB201001029D0 (en) | 2010-03-10 |
GB2480223A (en) | 2011-11-16 |
WO2011089398A2 (en) | 2011-07-28 |
WO2011089398A3 (en) | 2012-01-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |