JPS6325983A - Manufacture of infrared-ray detecting element - Google Patents
Manufacture of infrared-ray detecting elementInfo
- Publication number
- JPS6325983A JPS6325983A JP61169261A JP16926186A JPS6325983A JP S6325983 A JPS6325983 A JP S6325983A JP 61169261 A JP61169261 A JP 61169261A JP 16926186 A JP16926186 A JP 16926186A JP S6325983 A JPS6325983 A JP S6325983A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- band
- point
- mum
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000013078 crystal Substances 0.000 claims abstract description 49
- 239000000203 mixture Substances 0.000 claims abstract description 19
- 230000035945 sensitivity Effects 0.000 claims abstract description 9
- 238000005498 polishing Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 abstract description 9
- 239000010980 sapphire Substances 0.000 abstract description 9
- 239000002131 composite material Substances 0.000 abstract description 4
- 238000001259 photo etching Methods 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 229910004613 CdTe Inorganic materials 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
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- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
本発明は、素子形成用素材に組成変動勾配の大きいエピ
タキシャル結晶を用いるとともに、これを斜めに研磨し
て複数の波長域に感度を有する結晶を作り、所望の波長
域に素子形成を行うことによって、複数の波長域に感度
を有する赤外線検知素子を製作するようにした赤外線検
知素子の製造方法である。Detailed Description of the Invention [Summary] The present invention uses an epitaxial crystal with a large compositional variation gradient as a material for forming an element, and also polishes the epitaxial crystal diagonally to produce a crystal sensitive to multiple wavelength ranges. This is a method of manufacturing an infrared sensing element in which an infrared sensing element having sensitivity in a plurality of wavelength ranges is manufactured by forming an element in a wavelength range of .
本発明はＨｇ＋−ｘ Ｃｄｘ Ｔｅエピタキシャル結晶
を用いた赤外線検知素子の製造方法に係り、特に一つの
結晶を用いて複数の波長１例えば３〜５μｍ帯および１
０μｍ帯の二つの波長域に感度を有する赤外線検知素子
の製造方法に関する。The present invention relates to a method for manufacturing an infrared sensing element using a Hg+-x Cdx Te epitaxial crystal, and particularly relates to a method for manufacturing an infrared sensing element using a Hg+-x Cdx Te epitaxial crystal.
The present invention relates to a method for manufacturing an infrared sensing element that is sensitive to two wavelength regions in the 0 μm band.
現在製造されている赤外線検知素子は、主として３μｍ
〜５μｍ帯に感度を有するもの（組成Ｘ＝ ０．３）と
、１０μｍ帯に感度を有するもの（組成ｘ＝０．２）と
に大別されるが、最近は１０μｍ帯と３〜５μｍ帯の二
つの波長域に感度を有する赤外線検知素子の需要が高ま
っている。Currently manufactured infrared sensing elements are mainly 3 μm thick.
It is roughly divided into those sensitive in the ~5 μm band (composition X = 0.3) and those sensitive in the 10 μm band (composition x = 0.2), but recently they have been There is an increasing demand for infrared sensing elements that are sensitive to two wavelength ranges.
Ｃ従来の技術〕
第３図（ａｌ、 （ｂｌは１０μｍ帯と３〜５μｍ帯の
両波長域に感度を有する赤外線検知素子の構成例を示す
要部平面図および側断面図である。C. Prior Art] FIG. 3 (al, (bl) are a plan view and a side sectional view of essential parts showing an example of the configuration of an infrared detection element having sensitivity in both the 10 μm band and the 3 to 5 μm wavelength range.
従来の技術を用いて１０μｍ帯と３〜５μｍ帯の両波長
域に感度を有する赤外線検知素子を製造する場合は、第
３図に示す如＜、１０μｍ帯用に作用した結晶１１と３
〜５μｍ帯用に作成した結晶１２とを所定の間隔Ｗを隔
てて一枚のサファイヤ板１０上に配置し、接着剤５を用
いて貼付ける方法によって製造されていた。When manufacturing an infrared sensing element sensitive to both the 10 μm band and the 3 to 5 μm wavelength range using conventional technology, as shown in FIG.
The crystal 12 prepared for the ~5 μm band was placed on a single sapphire plate 10 at a predetermined distance W, and was manufactured using an adhesive 5.
しかしながら上記従来の方法は、サファイヤ板１０上に
、１０μｍ帯用結晶１１と３〜５μｍ帯用結晶１２とを
貼付する際、貼付用の接着材５が結晶１１゜１２の表面
に付着する事故が屡々発生するく素子化の段階で結晶面
に接着剤が付着すると素子の性能が著しく劣化する）。However, in the conventional method described above, when attaching the crystal 11 for a 10 μm band and the crystal 12 for a 3 to 5 μm band on the sapphire plate 10, there is an accident that the adhesive 5 for attaching adheres to the surface of the crystals 11 and 12. If adhesive adheres to the crystal plane during the device fabrication stage, which often occurs, the performance of the device will be significantly degraded.)
そしてこの事故を防止するためには、結晶１１と１２と
の間隔Ｗを少なくとも１ａｍ ＝ １０００μｍ以上開
けなければならず、このような検知器をシステム化した
場合、赤外線検知システムとしての性能低下を招く。従
って結晶１１と１２の間隔は極力小さくすることが望ま
れている。In order to prevent this accident, the distance W between the crystals 11 and 12 must be at least 1 am = 1000 μm or more, and if such a detector is systemized, the performance as an infrared detection system will deteriorate. . Therefore, it is desired that the distance between the crystals 11 and 12 be as small as possible.
第１図＜ａｌ、 （ｂ）、 （Ｃ）は本発明の原理図で
、（ａ）は従来の結晶と本発明に用いる結晶との組成の
相違を示す図、（ｂ）は本発明に用いるエピタキシャル
結晶の研磨方向を示す要部側断面図、（Ｃ）は本発明方
法によって製造された複合型赤外線検知素子の構成を示
す要部側断面図である。Figure 1<al, (b) and (C) are diagrams of the principle of the present invention, (a) is a diagram showing the difference in composition between the conventional crystal and the crystal used in the present invention, and (b) is a diagram showing the difference in composition between the conventional crystal and the crystal used in the present invention. FIG. 4C is a side cross-sectional view of a main part showing the polishing direction of the epitaxial crystal used, and FIG.
第１図（ａｌに示す如く、本発明に用いるＨｇ１−ウＣ
ｄ、 Ｔｅエピタキシャル結晶のカットオフ波長から求
めた組成カーブに２の組成変動勾配θ２は、従来の組成
カーブに＋の組成変動勾配θ、に比して非常に大きくな
っている。As shown in Figure 1 (al), Hg1-UC used in the present invention
d, The composition variation gradient θ2 of 2 in the composition curve determined from the cutoff wavelength of the Te epitaxial crystal is much larger than the composition variation gradient θ of + in the conventional composition curve.
従って、該エピタキシャル結晶は、厚さく単位μｍ）の
変化に対する組成値（単位Ｘ）の変化が従来のそれに比
して急峻で、例えば厚さ４０μｍのＡ点では組成値０．
２ （１０μｍ帯用）作用晶が、厚さ１０μｍのＢ点で
は組成値０．３（３〜５μｍ帯用）の結晶が得られるよ
うになっている。Therefore, in the epitaxial crystal, the change in composition value (unit X) with respect to change in thickness (unit: μm) is steeper than that of the conventional crystal; for example, at point A with a thickness of 40 μm, the composition value is 0.
2 (For 10 μm band) A crystal with a composition value of 0.3 (for 3 to 5 μm band) can be obtained at point B with a thickness of 10 μm.
このため、第１図（ｂｌに示す如く、エピタキシャル成
長層１を、Ａ点（１０μｍ帯用の作用組成値Ｘ＝０．２
が得られる厚さ４０μｍの点）とＢ点（３〜５μｍ帯用
の結晶組成値ｘ＝０．３が得られる厚さ１０μｍの点）
とを結ぶ線で斜め方向に研磨すると、一つの結晶であり
ながら複数の波長域に感度を有するエピタキシャル結晶
を得ることができる。図中、１はエピタキシャル層、２
はエピタキシャル成長層を形成するＣｄＴｅ基板である
。For this reason, as shown in FIG. 1 (bl), the epitaxial growth layer 1 is
Point B (point with a thickness of 40 μm where the crystal composition value x = 0.3 for the 3-5 μm band is obtained)
By polishing diagonally along a line connecting the two, it is possible to obtain an epitaxial crystal that is a single crystal but is sensitive to a plurality of wavelength ranges. In the figure, 1 is an epitaxial layer, 2
is a CdTe substrate on which an epitaxial growth layer is formed.
第１図（Ｃ１は上記の方法によって得られたエピタキシ
ャル結晶をサファイヤ板１０上に貼付し、フォトエツチ
ング等所定の素子製造プロセスを経て製作された複合型
赤外線検知素子の側断面図であって、同図の場合は１０
μｍ帯層１ａと３〜５μｍ帯層１ｂの二つの素子がサフ
ァイヤ板１０上に形成されている。FIG. 1 (C1 is a side sectional view of a composite infrared sensing element manufactured by pasting the epitaxial crystal obtained by the above method on a sapphire plate 10 and performing a predetermined element manufacturing process such as photoetching, In the case of the same figure, 10
Two elements, a μm band layer 1a and a 3-5 μm band layer 1b, are formed on a sapphire plate 10.
このような方法で複合型赤外線検知素子の製造を行うと
、
■、勾配θの大きさにもよるが、１０μｍ帯層１ａと３
〜５μｍ帯層１ｂとの間隔Ｗを従来よりも小さくできる
（従来は少なくとも１０００μｍを必要としたが、これ
を約１００μｍに縮小できる）。When a composite infrared sensing element is manufactured using this method, (1) depending on the size of the gradient θ, 10 μm band layers 1a and 3 are formed.
~5 μm The distance W from the band layer 1b can be made smaller than before (conventionally, at least 1000 μm was required, but this can be reduced to about 100 μm).
■、感度波長域の異なる二つの素子が一枚の結晶から形
成できるので素子製造プロセスが簡略化され、特に従来
のように二枚の結晶を別々に貼付する方法に比べて技術
面が著しく安定する。■Since two elements with different sensitivity wavelength ranges can be formed from a single crystal, the element manufacturing process is simplified, and the technology is particularly stable compared to the conventional method of attaching two crystals separately. do.
以下実施例図および前記原理図を用いて本発明の詳細な
説明する。The present invention will be described in detail below using embodiment figures and the above-mentioned principle diagrams.
第２図（ａ）、 （ｂ）、 （Ｃ１，（ｄｌは本発明に
よる赤外線検知素子の製造方法の一実施例を示す側断面
図であるが、前記第１図、第３図と同一部分には同一符
号を付している。FIGS. 2(a), (b), (C1, (dl is a side sectional view showing an embodiment of the method for manufacturing an infrared sensing element according to the present invention, and the same parts as FIGS. 1 and 3 above) are given the same reference numerals.
以下本発明を工程順序に従って説明する。The present invention will be explained below in accordance with the order of the steps.
■、結晶の製造〔第１図ｆａ）の原理図参照〕エピタキ
シャル結晶１を成長させた後、温度を高温、且つ長時間
保持して相互拡散による組成の急激な変動を生じさせ、
組成変動勾配θ２が従来のθ１よりも這かに大きいエピ
タキシャル結晶を作る。これにより、厚さ４０μｍの成
長層（Ａ点）からは１０μｍ帯用の結晶が得られ、厚さ
１０μｍの成長層（Ｂ点）からは３〜５μｍ帯用の結晶
が得られる。(2) Production of crystals (see principle diagram in Figure 1 fa) After growing the epitaxial crystal 1, the temperature is maintained at a high temperature for a long period of time to cause a rapid change in composition due to interdiffusion.
An epitaxial crystal is produced in which the compositional variation gradient θ2 is much larger than the conventional θ1. As a result, a crystal for a 10 μm band is obtained from the 40 μm thick growth layer (point A), and a crystal for a 3 to 5 μm band is obtained from the 10 μm thick growth layer (point B).
■、結晶の斜め研磨〔第２図（ａ）参照〕Ａ点とＢ点と
を結ぶ線上でエピタキシャル結品層１を斜めに研磨する
。Ａ点はエピタキシャル成長Ｎ１の厚さＴ、が４０μｍ
となる点であり、Ｂ点は厚さＴ２が１０μｍとなる点で
あって、Ａ点は１０μｍ帯に、またＢ点は３〜５μｍ帯
に感度を有する素子が形成される点である。(2) Diagonal polishing of crystal [See FIG. 2(a)] The epitaxial crystal layer 1 is polished diagonally on a line connecting points A and B. At point A, the thickness T of epitaxial growth N1 is 40 μm.
The point B is the point where the thickness T2 is 10 μm, the point A is the point where an element having sensitivity in the 10 μm band, and the point B is the point where an element having sensitivity in the 3 to 5 μm band is formed.
■、基板の斜め研磨〔第２図（ｂ）参照〕次にＣｄ Ｔ
ｅ基板２を、Ａ点とＢ点を結ぶ線と平行な直線、つまり
Ａ゛点とＢ”点とを結ぶ線上で研磨してエピタキシャル
成長層１の上面とＣｄＴｅ基板２の下面とが互いに平行
状態となるように仕上げる。■ Oblique polishing of the substrate [see Figure 2 (b)] Next, Cd T
The e-substrate 2 is polished on a straight line parallel to the line connecting points A and B, that is, on the line connecting points A'' and B'', so that the upper surface of the epitaxial growth layer 1 and the lower surface of the CdTe substrate 2 are parallel to each other. Finish it so that it becomes.
■、結晶の貼付〔第２図（Ｃ）参照〕
接着材５を用いて、斜め研磨されたＣｄＴｅ基板２をサ
ファイヤ板１０に貼付する。(2) Attaching the crystal [see FIG. 2(C)] Using the adhesive 5, the obliquely polished CdTe substrate 2 is attached to the sapphire plate 10.
■、素子形成〔第１図（ｄ）〕
第２図（ａ）、 （ｂｌに示すＡ点とＢ点の周辺部分に
それぞれ素子形成を行い、サファイヤ！７ｉ １０上に
１０μｍ帯層１ａと３〜５μｍ帯層１ｂとを形成させる
。② Element formation [Figure 1(d)] Figure 2(a), Elements were formed around the points A and B shown in (bl), and 10 μm band layers 1a and 3 were formed on the sapphire!7i 10. ~5 μm band layer 1b is formed.
以上の操作によって二つの波長域（１０μｍ帯。The above operations create two wavelength ranges (10 μm band).
３〜５μｍ帯）に感度を有し、且つ素子間隔Ｗが大幅に
縮小された（Ｗ＝約１００μｍ）複合型赤外線検知素子
が得られる。A composite infrared sensing element having sensitivity in the 3-5 μm band) and with a significantly reduced element spacing W (W=approximately 100 μm) can be obtained.
なお、第２図（ｄ）に示した工程では、素子間隔となる
部分（Ｗ）のＣｄＴａ基板２も完全にエツチング等で除
去したが、少なくともエピタキシャル成長層をエツチン
グすることで素子分離の効果はある。Note that in the step shown in FIG. 2(d), the CdTa substrate 2 in the part (W) that becomes the element spacing was also completely removed by etching, etc., but the effect of element isolation can be obtained by etching at least the epitaxial growth layer. .
また、上記の説明は単素子を対象に行ってきたが、本発
明は多素子の場合にも同様に適用し得る方法であること
はいうまでもない。Furthermore, although the above explanation has been made for a single element, it goes without saying that the present invention is a method that can be similarly applied to multiple elements.
さらに、上記実施例では、１０μｍ帯と３〜５／１ｍ帯
の二つの波長域にのみ感度を有する赤外線検知素子につ
いて述べたが、本発明はこれに限らずさらに多くの波長
域を備えた赤外線検知素子にも適用が可能である。Further, in the above embodiment, an infrared detection element that is sensitive only to two wavelength ranges, the 10 μm band and the 3-5/1 m band, is not limited to this. It can also be applied to sensing elements.
本発明は一枚のエピタキシャル結晶から複数の波長帯に
感度を有する赤外線検知素子を、その間隔を狭小に形成
することが可能なため、赤外線検知素子の製造効率と信
頼性とが大幅に改善される。The present invention makes it possible to form infrared sensing elements sensitive to multiple wavelength bands with narrow spacing from a single epitaxial crystal, which greatly improves the manufacturing efficiency and reliability of infrared sensing elements. Ru.
第１図（ａ）、 （ｂ）、 （Ｃ１は本発明の原理図、
第２図ｆａｎ、 （ｂ）、 （Ｃ１，ｆｄｌは本発明に
よる赤外線検知素子の製造方法の一実施例を示す側断面
図、
第３図（ａ）、 （ｂ）は従来の赤外線検知素子の構成
例を示す要部側断面図である。
図中、１はエピタキシャル成長層、
１ａは１０μｍ帯層、
１ｂは３〜５μｍ帯層、
２はＣｄＴｅ基手反１．
５は接着剤、
１０はサファイヤ板、
Ｋ、は従来の結晶の組成カーブ、
Ｋ２は本発明に用いる結晶の組成カーブ、Ｗは素子間隔
、
をそれぞれ示す。
滓発明１１図
第１図
斗溌ｇ訃−だ砲例ｍ
第 ２ 図Figure 1 (a), (b), (C1 is a diagram of the principle of the present invention,
Fig. 2 fan, (b), (C1, fdl is a side sectional view showing an embodiment of the method for manufacturing an infrared sensing element according to the present invention, Fig. 3 (a), (b) is a side sectional view of a conventional infrared sensing element. It is a side cross-sectional view of main parts showing an example of the structure. In the figure, 1 is an epitaxial growth layer, 1a is a 10 μm band layer, 1b is a 3 to 5 μm band layer, 2 is a CdTe substrate 1.5 is an adhesive, and 10 is a sapphire layer. In the plate, K is the composition curve of the conventional crystal, K2 is the composition curve of the crystal used in the present invention, and W is the element spacing. figure
Claims (1)
を用いて複数の波長域に感度を有する赤外線検知素子を
製造する方法において、 素子形成用素材として成長層の厚さ方向の組成変動勾配
（θ）を大きくしたエピタキシャル結晶（１）を用いる
と共に、該結晶（１）を斜めに研磨し、所定の組成部分
に素子形成を行うことによって、少なくとも二つ以上の
波長域に感度を有する赤外線検知素子を形成することを
特徴とした赤外線検知素子の製造方法。[Claims] In a method for manufacturing an infrared sensing element having sensitivity in a plurality of wavelength ranges using an epitaxial crystal of Hg_1_-_XCd_XTe, the compositional variation gradient (θ) in the thickness direction of a grown layer as a material for forming the element is provided. By using an epitaxial crystal (1) with a large diameter, polishing the crystal (1) diagonally, and forming an element in a predetermined composition area, an infrared sensing element sensitive to at least two or more wavelength ranges can be created. 1. A method for manufacturing an infrared sensing element, characterized by forming an infrared sensing element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61169261A JPS6325983A (en) | 1986-07-17 | 1986-07-17 | Manufacture of infrared-ray detecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61169261A JPS6325983A (en) | 1986-07-17 | 1986-07-17 | Manufacture of infrared-ray detecting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6325983A true JPS6325983A (en) | 1988-02-03 |
Family
ID=15883228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61169261A Pending JPS6325983A (en) | 1986-07-17 | 1986-07-17 | Manufacture of infrared-ray detecting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6325983A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2480344A (en) * | 2010-01-22 | 2011-11-16 | Secr Defence | An epitaxial layer configured to detect at least two frequency ranges of incident photons |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55115375A (en) * | 1979-02-26 | 1980-09-05 | Matsushita Electric Ind Co Ltd | Light detector element |
-
1986
- 1986-07-17 JP JP61169261A patent/JPS6325983A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55115375A (en) * | 1979-02-26 | 1980-09-05 | Matsushita Electric Ind Co Ltd | Light detector element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2480344A (en) * | 2010-01-22 | 2011-11-16 | Secr Defence | An epitaxial layer configured to detect at least two frequency ranges of incident photons |
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