GB2007021B - High temperature amorphous semiconductor member and method of making the same - Google Patents
High temperature amorphous semiconductor member and method of making the sameInfo
- Publication number
- GB2007021B GB2007021B GB7839177A GB7839177A GB2007021B GB 2007021 B GB2007021 B GB 2007021B GB 7839177 A GB7839177 A GB 7839177A GB 7839177 A GB7839177 A GB 7839177A GB 2007021 B GB2007021 B GB 2007021B
- Authority
- GB
- United Kingdom
- Prior art keywords
- making
- high temperature
- same
- amorphous semiconductor
- semiconductor member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Bipolar Transistors (AREA)
- Photovoltaic Devices (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Light Receiving Elements (AREA)
- Physical Vapour Deposition (AREA)
- Glass Compositions (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/841,369 US4177474A (en) | 1977-05-18 | 1977-10-12 | High temperature amorphous semiconductor member and method of making the same |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2007021A GB2007021A (en) | 1979-05-10 |
GB2007021B true GB2007021B (en) | 1982-05-06 |
Family
ID=25284694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB7839177A Expired GB2007021B (en) | 1977-10-12 | 1978-10-03 | High temperature amorphous semiconductor member and method of making the same |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5464981A (en) |
AU (1) | AU523107B2 (en) |
CA (1) | CA1123525A (en) |
DE (1) | DE2844070A1 (en) |
ES (1) | ES474153A1 (en) |
FR (1) | FR2454186A1 (en) |
GB (1) | GB2007021B (en) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57136377A (en) * | 1981-02-17 | 1982-08-23 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element |
DE3135411C2 (en) * | 1980-09-09 | 1994-07-07 | Energy Conversion Devices Inc | Photosensitive device with superimposed pin layers of an amorphous silicon alloy material |
CA1176740A (en) * | 1980-12-03 | 1984-10-23 | Yoshihisa Tawada | High-voltage photovoltaic cell having a hetero junction of amorphous semiconductor and amorphous silicon |
IE53485B1 (en) * | 1981-02-12 | 1988-11-23 | Energy Conversion Devices Inc | Improved photoresponsive amorphous alloys |
JPH03188682A (en) * | 1981-04-30 | 1991-08-16 | Kanegafuchi Chem Ind Co Ltd | High potential amorphous semiconductor/amorphous silicon heterojunction photovoltaic element |
JPS5814583A (en) * | 1981-07-17 | 1983-01-27 | Kanegafuchi Chem Ind Co Ltd | Amorphous semiconductor and amorphous semiconductor- amorphous silicon heterojunction photo voltaic element |
DE3280418T2 (en) * | 1981-07-17 | 1993-03-04 | Kanegafuchi Chemical Ind | AMORPHOUS SEMICONDUCTOR AND PHOTOVOLTAIC DEVICE MADE OF AMORPHOUS SILICON. |
DE3277665D1 (en) * | 1981-08-07 | 1987-12-17 | British Petroleum Co Plc | Non-volatile electrically programmable memory device |
JPS62162366A (en) * | 1981-09-17 | 1987-07-18 | Semiconductor Energy Lab Co Ltd | Composite having carbon coat |
JPH07105507B2 (en) * | 1982-02-25 | 1995-11-13 | プラズマ・フィジクス・コ−ポレ−ション | Photovoltaic device |
DE3314197A1 (en) * | 1982-04-28 | 1983-11-03 | Energy Conversion Devices, Inc., 48084 Troy, Mich. | P-CONDUCTING AMORPHOUS SILICON ALLOY WITH A LARGE BAND GAP AND MANUFACTURING PROCESS THEREFOR |
JPS5957407A (en) * | 1982-09-27 | 1984-04-03 | Sanyo Electric Co Ltd | Photovoltaic device |
JPS59108370A (en) * | 1982-12-14 | 1984-06-22 | Kanegafuchi Chem Ind Co Ltd | Photovoltaic device |
JPS58180074A (en) * | 1983-03-28 | 1983-10-21 | Shunpei Yamazaki | Photoelectric conversion semiconductor device |
ES8602301A1 (en) * | 1983-07-18 | 1985-11-01 | Energy Conversion Devices Inc | Enhanced narrow band gap alloys for photovoltaic applications. |
US4569697A (en) * | 1983-08-26 | 1986-02-11 | Energy Conversion Devices, Inc. | Method of forming photovoltaic quality amorphous alloys by passivating defect states |
JPS62162367A (en) * | 1986-11-19 | 1987-07-18 | Semiconductor Energy Lab Co Ltd | Composite having carbon coat |
JPS6316678A (en) * | 1986-12-26 | 1988-01-23 | Shunpei Yamazaki | Aphotoelectric converter |
JP2648733B2 (en) * | 1993-11-18 | 1997-09-03 | プラズマ・フィジクス・コーポレーション | Semiconductor device |
JPH077168A (en) * | 1994-04-15 | 1995-01-10 | Semiconductor Energy Lab Co Ltd | Photoeletcric conversion semiconductor device |
TWI245288B (en) * | 2003-03-20 | 2005-12-11 | Sony Corp | Semiconductor memory element and semiconductor memory device using the same |
US20080042119A1 (en) * | 2005-08-09 | 2008-02-21 | Ovonyx, Inc. | Multi-layered chalcogenide and related devices having enhanced operational characteristics |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51128268A (en) * | 1975-04-30 | 1976-11-09 | Sony Corp | Semiconductor unit |
CA1078078A (en) * | 1976-03-22 | 1980-05-20 | David E. Carlson | Schottky barrier semiconductor device and method of making same |
-
1978
- 1978-09-20 CA CA311,648A patent/CA1123525A/en not_active Expired
- 1978-09-27 AU AU40237/78A patent/AU523107B2/en not_active Expired
- 1978-10-03 GB GB7839177A patent/GB2007021B/en not_active Expired
- 1978-10-10 DE DE19782844070 patent/DE2844070A1/en active Granted
- 1978-10-10 FR FR7828855A patent/FR2454186A1/en active Granted
- 1978-10-11 ES ES474153A patent/ES474153A1/en not_active Expired
- 1978-10-12 JP JP12568278A patent/JPS5464981A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
AU4023778A (en) | 1980-04-03 |
DE2844070A1 (en) | 1979-04-26 |
JPS6230512B2 (en) | 1987-07-02 |
CA1123525A (en) | 1982-05-11 |
FR2454186A1 (en) | 1980-11-07 |
FR2454186B1 (en) | 1984-08-24 |
GB2007021A (en) | 1979-05-10 |
AU523107B2 (en) | 1982-07-15 |
ES474153A1 (en) | 1979-10-16 |
JPS5464981A (en) | 1979-05-25 |
DE2844070C2 (en) | 1990-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19921003 |