JPS5814583A - Amorphous semiconductor and amorphous semiconductor- amorphous silicon heterojunction photo voltaic element - Google Patents
Amorphous semiconductor and amorphous semiconductor- amorphous silicon heterojunction photo voltaic elementInfo
- Publication number
- JPS5814583A JPS5814583A JP56112572A JP11257281A JPS5814583A JP S5814583 A JPS5814583 A JP S5814583A JP 56112572 A JP56112572 A JP 56112572A JP 11257281 A JP11257281 A JP 11257281A JP S5814583 A JPS5814583 A JP S5814583A
- Authority
- JP
- Japan
- Prior art keywords
- type
- amorphous semiconductor
- amorphous
- transparent electrode
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 5
- 239000011737 fluorine Substances 0.000 claims abstract description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- GVGLGOZIDCSQPN-PVHGPHFFSA-N Heroin Chemical compound O([C@H]1[C@H](C=C[C@H]23)OC(C)=O)C4=C5[C@@]12CCN(C)[C@@H]3CC5=CC=C4OC(C)=O GVGLGOZIDCSQPN-PVHGPHFFSA-N 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 10
- 239000001257 hydrogen Substances 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 5
- 238000010276 construction Methods 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 238000000354 decomposition reaction Methods 0.000 description 7
- 229910000077 silane Inorganic materials 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、新規なアモルファス半導体並びにアモルファ
ス半導体／アモルファスシリコンへテロ接合光電素子に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a novel amorphous semiconductor and an amorphous semiconductor/amorphous silicon heterojunction optoelectronic device.
シラン（ＥｌｉＩＩ、）のプラズマ分解法で得られるア
モルファスシリコンは、Ｗ、 １．８ｐ＠ａｒ等によっ
て、ＰＨ，やＢ、 ｉｌ、でドープする事によシ、その
伝導度を大きく変える事ができる仁とが発見され（１９
７６年）、Ｄ、 Ｉｉ、 ｏａｒｌｓｏｎ 等によって
アモルファスシリコンを用い九太陽電池が試作（１９７
６年）されて以来注目を集め、アモルファスシリーン薄
膜太陽電池の効率を改善する研究が活発に行なわれてい
る〇これまでの研究により、アモルファスシリコン薄膜
光電素子の構造として祉シ１ットキーパリャー型、ｐｌ
ｎ型、ＭＩＢ型、ヘテ冑接合型があ如、・そのうち前三
者が高効率太陽電池として有望視されている。すなわち
ショットキーバリヤー型で５．５−（Ｉ）、＆カールソ
ン他、１９７７年）、ＭＩＤ型？４．８１（Ｊ、工、Ｂ
、クィルソン他、１９７８）、 ｐｉｎ型で４．５−（
浜用圭弘 １９７８）の変換効率が達成されている０ｐ
ｌｎジヤ、ンクション型太陽電池の場合、ｐ型又はｎ型
アモルファスシリコンではキャリヤーの寿命が短かく、
有効なキャリヤーにならず、また光の吸収係数が１層に
比べて大きい事から１層での光の吸収ロスが大舞い点に
問題があった。The conductivity of amorphous silicon obtained by plasma decomposition of silane (EliII) can be greatly changed by doping it with PH, B, il, etc. using W, 1.8p@ar, etc. Jin was discovered (19
Nine solar cells were prototyped using amorphous silicon by D. Ii, Oarlson et al. (1976),
6) Since then, research has been actively conducted to improve the efficiency of amorphous silicon thin-film solar cells. Previous research has shown that the structure of amorphous silicon thin-film photovoltaic devices is a transparent cell type, pl.
There are n-type, MIB-type, and heterojunction types; the first three are considered promising as high-efficiency solar cells. That is, Schottky barrier type 5.5-(I), & Carlson et al., 1977), MID type? 4.81 (J, Engineering, B
, Quilson et al., 1978), 4.5-(
0p has achieved the conversion efficiency of Keihiro Hamayo (1978).
In the case of 1N-type solar cells, p-type or n-type amorphous silicon has a short carrier life;
The problem was that it did not become an effective carrier, and since the light absorption coefficient was larger than that of a single layer, there was a large loss of light absorption in the single layer.
このような欠点を改良する為にインバーティドルミｎ型
の光電素子が提案されている０すなわちｎ型アモルファ
スシリコン側から光を照射する素子である。この素子は
ｐ型に比べると光の吸収係数が比較的小さい為にやや有
利と考えられる。しかしこのｎ型アモルファスシリコン
でも光の吸収ロスがある点ではｐ型と変シない。In order to improve these drawbacks, an invertive n-type photoelectric element has been proposed, which is an element that irradiates light from the 0, that is, n-type, amorphous silicon side. This element is considered to be somewhat advantageous because it has a relatively small light absorption coefficient compared to the p-type element. However, this n-type amorphous silicon is no different from the p-type in that there is light absorption loss.
本発明者は、ｐｉｎ型光電変換の効率を改善する為に鋭
意研究した結果、ａ −８１（１−Ｘ −ｙ） Ｏ１Ｎ
ｙで示される水素又は７ツ索化アモルファス半導体のｐ
型又はｎ型ドープ薄膜を、ｐｉｎ接合接合光子素子又は
ｎ層の少なくとも一方に用いる事により短絡電流り開放
電圧を大巾に改善できることを見い出したもので、太陽
電池や光スイッチ尋の光起電力素子として用いる仁とが
できる。以下にその詳細を説明する。As a result of intensive research to improve the efficiency of pin-type photoelectric conversion, the present inventor discovered that a -81(1-X -y) O1N
Hydrogen denoted by y or p of a seven-stranded amorphous semiconductor
It was discovered that short-circuit current and open circuit voltage can be greatly improved by using a type or n-type doped thin film in at least one of the pin-junction photon element or the n-layer, and this can significantly improve the short-circuit current and open voltage of photovoltaic devices such as solar cells and optical switches. It can be used as an element. The details will be explained below.
本発明に用いるアモルファスシリプン社、シラン（８１
１１，）又はその誘導体又は７ツ化シラン又はその誘導
体、又はこれらの混合物と、水素又は水素で希釈したア
ルゴン、ヘリウム咎の不活性ガスとの混合ガスを、容量
結合法又は銹導結合法による高周波グロー分解又社直流
グーー放電分解することにより得られる。混合ガス中の
シランの一度社、通常０．５〜ｓｏｎ、好ましくは１〜
２０％であるＯ
基板の温度は２００〜３００℃が好ましく、透明電極（
ＩＴＯ、ＢｎＯＨ等）を蒸着し九ガラスや高分子フィル
ム、金属等、太陽電池の構成に必要なあらゆる基板が含
まれる。Amorphous Silane Co., Ltd., Silane (81) used in the present invention
11,) or its derivatives, or a mixture of these and hydrogen or an inert gas such as argon or helium diluted with hydrogen, by a capacitive coupling method or a conductive coupling method. It can be obtained by high frequency glow decomposition or direct current glow discharge decomposition. The concentration of silane in the mixed gas is usually 0.5~son, preferably 1~son.
The temperature of the substrate is preferably 200 to 300°C, and the transparent electrode (
It includes all the substrates necessary for the construction of solar cells, such as glass, polymer films, metals, etc., on which ITO, BnOH, etc. are deposited.
太陽電池の基本構成は、第１図の（→、（ｂ）に代表例
が示される。（ａ）はｐ＠から光を照射するタイプで、
例えばガラス−透明電極−ｐ −１−ｎ−ム１の構成、
（ｂ）はｎ側から光を照射するタイプで、例えばステン
レス−ｐ −ｉ −ｖｓ−透明電極の構成である。その
他、」層又ｄａ層と透明電極の間に薄い絶縁層をつけ九
夛、薄い金属層をつけた構造でもよい。！！’Ｆｉｐ−
１−ｎ接合を基本とす今ものであればいかなる構成でも
よい〇
シラン若しくはその誘導体、又はフッ化シラン命で約１
４？’ｃｓｍ−”・マー１以下の局在単位密度および１
Ｇ−”ａｍ”７７以上の易動度をもつ真性アモルファス
シリ、コン（以下、１型ａ−８１という）を１層として
、ｐ型とｎ型ドープ半導体で接合したｐａｎ接合構造に
するわけであるが、本発明ではｐ層又ｔｉ勤層の少なく
とも一方、すなわち少なくとも光を照射する＠に、一般
式ａ−ｓｌ（ｔ−ｚ−ｙ）’！’７で示される水素又は
フッ素を含むアモルファス半導体のｐ型又はｎ型ドープ
薄膜を用いることを４１１１とする０１層とｎ層の両方
に用いてもよい。又本発明のアモルファス半導体を用い
ないドープ層は、１紀１型＆−８１をｐ型で用いる場合
は周期率表ｍ族の元素でドープし、ｎ型で用いる場合は
周期率表マ族の元素でドープすればよい。A typical example of the basic configuration of a solar cell is shown in Figure 1 (→, (b). (a) is a type that emits light from p@,
For example, the structure of glass-transparent electrode-p-1-n-mu1,
(b) is a type in which light is irradiated from the n side, and has, for example, a stainless steel-p-i-vs-transparent electrode structure. Alternatively, a structure may be used in which a thin insulating layer is provided between the layer or the transparent electrode, and a thin metal layer is provided between the layer and the transparent electrode. ! ! 'Fip-
Any current configuration based on 1-n junction may be used. Silane or its derivatives, or fluorinated silane, approximately 1
4? 'csm-'・mer localized unit density below 1 and 1
A PAN junction structure is created in which a single layer of intrinsic amorphous silicon and silicon (hereinafter referred to as type 1 A-81) with a mobility of G-"am" 77 or higher is joined with p-type and n-type doped semiconductors. However, in the present invention, the general formula a-sl(t-z-y)'! A p-type or n-type doped thin film of an amorphous semiconductor containing hydrogen or fluorine shown in 4111 may be used for both the 01 layer and the n layer. In addition, the doped layer of the present invention that does not use an amorphous semiconductor is doped with an element of group M of the periodic table when using 1/1 type &-81 as a p-type, and doped with an element of group M of the periodic table when used as an n-type. It can be doped with elements.
本発明のアモルファス半導体は、一般式＆ −８１（１
−ｚ −ｙ） ０ＸＮＦで示されるア毫ル７アスシリコ
ンーカーボンナイトライドである。これ社シリコンの水
素又社フッ素化合物と炭素およびフッ素の水素又はフッ
素化合物をグロー放電分解して得られるものであって、
その中ＫＯ，５〜３Ｑ ａｔｏｍ ％の水率及び／又は
フッ素を含む。また、これはｐ型又はｎ型に不純物でド
ープされることが望ましいものである。さらに好ましく
は光学的バンドギャップが約１．８５ｅＶ以上でありか
つ２０℃における電気伝導度が約１Ｏ−（ｎ ５ｃｓ）
−’以上であり、かつｐ−１−ｎ接合した場合の拡散電
位ｖａが約１−１ｖｏｌｔａ以上であるｐ型又はｎ型ア
モルファス半導体を満足するものである。The amorphous semiconductor of the present invention has the general formula &-81(1
-z -y) It is a 7-asilicon-carbon nitride represented by 0XNF. It is obtained by glow discharge decomposition of hydrogen or fluorine compounds of silicon and hydrogen or fluorine compounds of carbon and fluorine,
It contains KO, 5-3Q atom % of water and/or fluorine. Further, it is desirable that this is doped with a p-type or n-type impurity. More preferably, the optical bandgap is about 1.85 eV or more and the electrical conductivity at 20°C is about 1O-(n 5cs).
-' or more, and satisfies a p-type or n-type amorphous semiconductor in which the diffusion potential va when forming a p-1-n junction is about 1-1 volta or more.
これらのアモルファス半導体は光学的バンドギャップが
大きくその為に、ｐ−１−ｎ接合光起電力木子の慾材料
として用いると短絡電流Ｊａｃの増加は当然考えられる
が、いずれの場合も非常に大きな開放電圧Ｔｏｅを示す
。本発明の光起電力素子においても特願昭５６−６６６
８９号と同様に第２図に示すバンドプロファイルの拡散
電位Ｖａとその素子の開放電圧ＴＯＯＫ相関がある。Since these amorphous semiconductors have a large optical band gap, it is natural that the short circuit current Jac will increase if they are used as a material for a p-1-n junction photovoltaic device. Indicates voltage Toe. Regarding the photovoltaic device of the present invention, patent application No. 56-666
Similar to No. 89, there is a correlation between the diffusion potential Va of the band profile shown in FIG. 2 and the open circuit voltage TOOK of the element.
本発明の場合もＶａは約１． ｌ ｙｏｌｔｓ以上であ
るが、この関係は光照射する側のアモルファス半導体の
種類に関係なくほぼ同一の傾向を示す。この拡散電位Ｖ
ａは光照射する側の７モル７７ス半導体の光学的バンド
ギャップ−０゜ｐｔからＰ ｅ ”ドープ層のフェルミ
レベルｌｆの差を差し引く事によって得られる。すなわ
ち第２図に示すようＫｎ側の伝導帯のエネルギーレベル
１０゜、ｐ側の価電子帯のエネルギーレベルを−１とし
て、電気伝導度の温度依存性から活性化エネルギーΔｌ
ｐとΔ−が求められる。ｐ型の場合ΔＫｐ ＝ Ｈｆ、
−Ｋｙｐ 、 ｙｓ型の場合Δｌｎ＝ ｌ、。−釘でｓ
Ｖｌ＝Ｉｃｇ＊ｏｐｔ （ΔＩｐ＋Δｚｎ）であるＯ
ｎ儒から光照射する場合も同様ｉｃｎ型アモルファス半
導体の光学的バンドギャップ−＠ ｏｐｔからｐ、ｎの
７エルンレペル１ｆの差を差し引いて求められる。Also in the case of the present invention, Va is about 1. However, this relationship shows almost the same tendency regardless of the type of amorphous semiconductor on the side to which light is irradiated. This diffusion potential V
a can be obtained by subtracting the difference in the Fermi level lf of the P e '' doped layer from the optical bandgap -0°pt of the 7M77 semiconductor on the side to which light is irradiated.In other words, as shown in Figure 2, Assuming that the energy level of the conduction band is 10° and the energy level of the p-side valence band is -1, the activation energy Δl is calculated from the temperature dependence of electrical conductivity.
p and Δ- are found. For p-type, ΔKp = Hf,
-Kyp, Δln=l, for ys type. - with a nail
In the case of light irradiation with Vl=Icg*opt (ΔIp+Δzn), the optical bandgap of the icn type amorphous semiconductor is similarly determined by subtracting the difference of 7 Ern lepel 1f between p and n from the optical band gap −@opt.
本発明の一般式＆−８１０−Ｘ−ア） ０，１アで表わ
されるアモルファス半導体の場合もＮ＠ ＊ Ｏｐｔが
約１．８５・７以上でかつＶａが約１．１ｖｏｘｔ−以
上上ある仁とが望ましい。このような条件を温良すアモ
ルファス半導体を用いたへチル接合光起電力素子ＦｉＪ
ｇ、とＴｏｏが著しく改豊される〇
本発明は、さらに好ましくは、室温での電気伝導度が１
０＝（Ω・国）−１以上である・これ以下であるとフィ
ルファクターｙｙが小さくなシ愛換効率が実用的でなく
なるからである・
本発明のへチル接合光起電力素子について以下に具体的
に説明すると、次ｏａｎである。代表的碌構造は透明電
極／ｐ型ａ −ａｔ （＊ ＝ｘ−ｙ） ＯｚＭｙ ／
１ｆｉａ−８１７ｎ型＆−８１７電極の構造で、透明電
極側から光を照射する。透明電極はエテ０や８ｎ４ＩＫ
８ｎＯ，が好ましく、ガラス基板Ｋｌらかしめ蒸着し
て用い九ｋ）ｐ型アモルファス半導体上に直接蒸着して
もよい。光を照射する側のｐＩＩ ＩＬ −８１（＊
−ｘ７）０１１７層の厚みは約３０Ｋから３００ム好ま
しくは５０ムから２００ム、１型ａ−８１層の厚みは本
発明の場合限定されないが約２５００〜１００００ムが
用いられるＯｏ’。In the case of an amorphous semiconductor represented by the general formula &-810-X-a)0,1a of the present invention, N is desirable. Hethyl junction photovoltaic device FiJ using an amorphous semiconductor that satisfies these conditions
g, and Too are significantly improved. More preferably, the present invention has an electrical conductivity of 1 at room temperature.
0 = (Ω・Country) - 1 or more. If it is less than this, the exchange efficiency will be impractical if the fill factor yy is small. The following describes the hethyl junction photovoltaic device of the present invention. To be more specific, it is the following oan. A typical structure is transparent electrode/p-type a-at (* = x-y) OzMy/
With the structure of 1fia-817n type & -817 electrode, light is irradiated from the transparent electrode side. The transparent electrode is Ete0 or 8n4IK.
8nO is preferable, and is used by caulking vapor deposition on a glass substrate K1.9k) It may also be directly vapor-deposited on a p-type amorphous semiconductor. pII IL-81 (*
-x7) The thickness of the 0117 layer is approximately 30K to 300 μm, preferably 50 μm to 200 μm, and the thickness of the type 1 a-81 layer is not limited in the case of the present invention, but is approximately 2500 μm to 10000 μm Oo′.
ｎ型１−８１層の厚みは限定されないが約１５０ム〜６
００ムが用いられる０又このｎＭＩｌａ−Ｊ３１の代わ
夛に本発明の！ｌ Ｊｌｌ ＳＬ −８１（１−１−ｙ
） ０１ｌｙを用いてもよい〇もう１つの代表的な構造
は
透明電極／ｎ型ａ−８１（ｉ−２−ｙ） Ｏ１Ｍｙ／
ｔｍ ａ−８１／ｐｐ型Ｌ−８１７電極の構造で、透明
電極側から光を照射する０光を照射する側のｎ型ａ −
ｓｔ （ｍ −ｘ７） ＯｘＭｙの厚み社約３０ムから
３００ム好ましくは５０ム〜２００ム、１型−−８１層
の厚み祉限定されないが約２５００ム〜１００００ムが
通常用いられる。ｐＭＩ！ａ−８１層の厚みは限定され
ないが約１５０ム〜６００ムが用いられる〇又このｐｇ
ａ−８１の代わ夛に本発明のｐ型ａ−８１（１−１−ｙ
）ＯｌＭｙを用いても良い。透明電極の素材及び蒸着法
については前同様である。The thickness of the n-type 1-81 layer is not limited, but is approximately 150 μm to 6 μm.
In this invention, in place of nMIla-J31, 0.00μ is used! l Jll SL-81(1-1-y
) 01ly may be used 〇 Another typical structure is transparent electrode/n-type a-81(i-2-y) O1My/
tm a-81/pp type L-817 electrode structure, irradiating light from the transparent electrode side 0 n type a - on the side that irradiates light
st (m - x 7) OxMy thickness of about 30 µm to 300 µm, preferably 50 µm to 200 µm, type 1 - 81 layer thickness, although not limited, about 2,500 µm to 10,000 µm is usually used. pMI! The thickness of the a-81 layer is not limited, but approximately 150mm to 600mm is used.Also, this pg
In place of a-81, p-type a-81 (1-1-y
) OlMy may also be used. The material and vapor deposition method for the transparent electrode are the same as before.
次に実施例により本発明の効果について説明する０内径
１１ｍの石英反応管を用い１３．５６１６層高周波でグ
ー−放電分解を行う。１型ａ−８１は、水素で希釈した
シランを２〜１０力汀でグー−放電分解して得られる６
ｎｆＩ！ａ−８１は水素で希釈したシランドア ＊
、Ｘ ７ （７（Ｉ’ｌｌＪ （Ｎ、／８１Ｈａ ＝
Ｑ、５４ル％）を同様にグロー放電分解して得られる。Next, the effects of the present invention will be explained with reference to Examples. Using a quartz reaction tube with an inner diameter of 11 m, Goo discharge decomposition is carried out at a 13.5616 layer high frequency. Type 1 a-81 is obtained by decomposing silane diluted with hydrogen by goo-discharge under 2 to 10 degrees of force.
nfI! a-81 is a siland door diluted with hydrogen *
,X 7 (7(I'llJ (N, /81Ha =
Q, 54%) can be similarly obtained by glow discharge decomposition.
ｐ型＆ −８１（１−Ｘ−７）ＯｌＭｙ ＃ｉ水素で希
釈し九シラン、メタン（ＯＨ，）、アンモニア（ｍｔ、
）、ジポラン（鳥■・）（ＩＩ／（８１＋ｃ＋１ ）
＝６．５０層ｗ％）を同様にグー−放電分解して得られ
る。ζこで＆ −８１（１−Ｘ−７）場は、グルー放電
時のガス組成を変量してそのアト２ツクフラクシヨン（
ｘ＋ｙ）が０．８０〜０．０５になルヨうｋしえ。p-type & -81(1-X-7)OlMy #i9 diluted with hydrogen, silane, methane (OH, ), ammonia (mt,
), Ziporan (bird ■・) (II/(81+c+1)
= 6.50 layer w%) is similarly obtained by goo-discharge decomposition. ζ Here & -81(1-X-7) field is calculated by changing the gas composition during glue discharge and calculating its at2 fraction (
x+y) should be between 0.80 and 0.05.
太陽電池の構成は、２５ ｎ ／（ｌ ｆ）ＢｎＯ＠薄
膜のついたガラス基板の８ｎＯ瀧面Ｋｙｐ型’−８１６
−ｘｙ）ＯｘＮｙ ＊１型ａ−８１、ｎ ＩＪ ａ−８
１の順に堆積し最後に３．３ｆｌのアル２＝ウムを蒸着
してム一−１（１’０ＯＷＩＩ／ｃｔＸ ）のソーラー
シー沙−ターで太−電池特性を−ベ九。The structure of the solar cell is an 8nO cascade Kyp type '-816 on a glass substrate with a 25n/(lf)BnO@ thin film.
-xy) OxNy *1 type a-81, n IJ a-8
Finally, 3.3 fl of Al2=U was deposited in the order of 1 and 3.3 fl was deposited in a solar seater of 1'0 OWII/ctX to obtain thick battery characteristics.
７゜−０、。基□度□２５Ｇ’Ｃア行Ｏｆｆ。！、１層
の厚みは１３５ムである。ｐ ｍ！ ＩＬ−８１（１−
ｘ−ｙ） Ｏｘ”ｙの膜組成による太陽電池特性を表−
ＩＫｙす０効率（以下、１という）４．６１１であるの
に対して本発明Ｏａ−ｓｉ （１−ｚ−ｙ） ＱｘＭｙ
を用いるとｘ＝０．０５ｙ＝ｏ、ｏｓで４Ｗ＝６．５’
ｌと増加し、ｚ ｓｅ Ｑ、ｌ Ｑｙ＝＝Ｑ、２Ｑ”ｉ
’は？＝７．３ｆ［も改善サレル。Ｘ＝０．３７＝０．
３ ”ｔ”ｔｉ Ｗ＝７．６ ％ＦＣ４ｍしシ９ン１０
０−の時に比し極めて高い値が得られる◇ここて注目す
べき点はａ−８１（ｍ −Ｘ−ｙ）ｏｘＩｙａ光学的禁
止帯巾が１−８１より大きくなることから短絡電流ｑａ
ｃの増加社浩然であるにして亀、開放電圧ｖｏｃの増加
は予よってこのような効率
これらの結果はｇｉＦ、とＯＨ４，１２１１１，を用い
ても全く同様であつ苑。7°-0. Base □ degree □ 25G'C A row Off. ! , the thickness of one layer is 135 μm. PM! IL-81(1-
x-y) Table of solar cell characteristics depending on the film composition of Ox”y.
IKysu0 efficiency (hereinafter referred to as 1) is 4.611, whereas the present invention Oa-si (1-z-y) QxMy
Using x=0.05y=o, os 4W=6.5'
z se Q, l Qy==Q, 2Q”i
'teeth? =7.3f [also improved Salel. X=0.37=0.
3 “t”ti W=7.6 %FC4m and S9in10
An extremely high value is obtained compared to the case of 0- ◇The point to note here is that the short circuit current qa is
Although the increase in c is natural, the increase in the open-circuit voltage voc preliminarily results in such efficiency.These results are exactly the same even when using giF and OH4,12111.
この＆−８１（１−Ｘ−７） ＣｊｚＭｙの光学的バン
ドギャップ−・ｏｐｔは、表−１に示すように亀−８１
よ）も大きな値を示しているので、これらのアモルファ
ス半導体を窓材料にすればＪｓｅの増加Ｆｉ轟然期待さ
れる。ところがＪｓａだけでな（Ｔｏｅも著しく改良さ
れる０この理由について拡散電位ＶａとＷｏｅの関係を
調べてみると第３図に−示すように、ｖＯＣと■の関に
は明瞭な直線関係のある事が判る。すなわちＶａの増加
とともＫ Ｔｏｅ Ｉｌｉ直線的に増加する。この事は
、光学的バンドギャップの大きなアモルファス半導体を
ｐ−ト１接合光起電力素子の窓材料にすれば、拡散電位
の増加によって輪も改良される事を示している＠
すなわち−・学が約１−８５ａＶ以上でｐ−１−ｎ接合
の拡散電位Ｖｄが１．１ ｖｏｌを以上になるアモルフ
ァス半導体を窓材料としたへテロ接合光起電力素子はＪ
ａｅだけでな（Ｔｏｅも著しく改良されるわけである０
これらの効果社第１図（ｂ）の太陽電池の構成でｎ側に
ｎ ｍ ＩＬ−８１（ｍ −Ｘ−７） ０ｚＮｙを用い
て屯同様に発現される０The optical band gap of &-81(1-X-7) CjzMy is as shown in Table 1.
y) also shows a large value, so if these amorphous semiconductors are used as window materials, a dramatic increase in Jse and Fi is expected. However, not only Jsa (Toe is also significantly improved).As for the reason for this, when we investigate the relationship between diffusion potential Va and Woe, as shown in Figure 3, there is a clear linear relationship between vOC and ■. In other words, as Va increases, K Toe Ili increases linearly.This means that if an amorphous semiconductor with a large optical bandgap is used as the window material of a p-to-1 junction photovoltaic device, the diffusion potential will increase. It is shown that the ring is also improved by increasing the value of the window material. The heterojunction photovoltaic device is J
Not only ae (Toe is also significantly improved0)
These effects are expressed in the same way as in tun by using n m IL-81(m -X-7) 0zNy on the n side in the solar cell configuration shown in Figure 1(b).
第り図（ａ）ｕｐ層側から光を照射するタイプの光電素
子を示す構造図で轡って、図中１はガラス、２は透明電
極、３はｐ型アモルファス半導体、４はｉ型＆−８１，
５はｎｆＪ半一体（例えばｎ型ａ−８１）、６Ｆｉ電極
である。同（ｂ）はｎ層側から光を照射するタイプを示
す構造図で、７は電極基板、８はｐ型＆−８１，９は１
型ａ−８１，１０＃ｉｎ型アモルファス半導体、ｌｌは
透明電極である。９２図は本発明に係るヘテ’Ｃ１ｐ−
１−ｎ接金光起電力素子のエネルギー具ントブロ７アイ
ル＋ある◎第３図はｐ型のアモルファス半導体を窓側に
した場合の拡散電位■と開放電圧の関係を示すグラフで
ある。
特許出願人 鐘淵化学工業株式会社
・ 代理人弁理士内田敏彦Figure 2 (a) is a structural diagram showing a type of photoelectric element that irradiates light from the up layer side. In the figure, 1 is glass, 2 is a transparent electrode, 3 is a p-type amorphous semiconductor, and 4 is an i-type & -81,
5 is an nfJ half-integrated (for example, n-type A-81), 6Fi electrode. (b) is a structural diagram showing a type that irradiates light from the n-layer side, where 7 is an electrode substrate, 8 is a p-type &-81, and 9 is a 1
Type A-81, 10#in type amorphous semiconductor, 11 is a transparent electrode. Figure 92 shows Hete'C1p- according to the present invention.
Figure 3 is a graph showing the relationship between the diffusion potential (■) and the open circuit voltage when a p-type amorphous semiconductor is placed on the window side. Patent applicant Kanebuchi Chemical Industry Co., Ltd. Representative patent attorney Toshihiko Uchida
Claims (1)
すｔＬ、カッ水素及び／又紘フッ素を０．５〜３０ａｔ
ｏｍ−含むアモルファス半導体０ ２ Ｐ型又は１１型に不純−ドープされ九ことを特徴と
するＩｆ！ｆｉＦＦｌｌｌ！求の範囲第１項記載のアモ
ルファス半導体。 ３ ２０℃におする電気伝導度が１０．”” （（１ａ
ｍ ｃｓ）−”以上である事を特徴とする特許請求の範
囲第２項記載のアモルファス半導体。 ４ ｐ−１−ｎ接合アモルファスシリコン系光起電力
素子において、ＩＩ型又はｎ型ア士ル７アス半導体が一
般式’ −” （１−ｘ−ｙ） ＯｘＭｙで表わされる
アモルファス半導体である事を特徴とするｐ−１−ｎア
モルファスシリコン系光起電力素子。 Ｓ４Ｉ許請求の範囲第１項記載のアモルファス半導体に
＆ｈて０．０５１ ｘ ｌ ０．７５ 、 Ｏ，０５ｌ
ｙ１０．７５ 。 ０、０５？ｘ＋ｙ？０．８０である事を特徴とする７％
ルファスシリコン系先光起電力素子[Claims] l General formula & -81(1-1-y) OxMy tL, 0.5 to 30 at of dihydrogen and/or fluorine
If! characterized in that it is an om-containing amorphous semiconductor 0 2 P-type or 11-type impurity-doped. fiFFllll! Amorphous semiconductor according to claim 1. 3 Electric conductivity at 20°C is 10. ”” ((1a
The amorphous semiconductor according to claim 2, characterized in that the amorphous semiconductor has an amorphous silicon-based photovoltaic element with a p-1-n junction amorphous silicon-based photovoltaic device, which is characterized in that the amorphous semiconductor is larger than or equal to "mcs)". 1. A p-1-n amorphous silicon-based photovoltaic device, characterized in that the amorphous semiconductor is an amorphous semiconductor represented by the general formula '-'' (1-x-y)OxMy. S4I The amorphous semiconductor according to claim 1 &h is 0.051 x l 0.75, O,05l
y10.75. 0,05? x+y? 7% characterized by 0.80
Rufus silicon-based photovoltaic device
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56112572A JPS5814583A (en) | 1981-07-17 | 1981-07-17 | Amorphous semiconductor and amorphous semiconductor- amorphous silicon heterojunction photo voltaic element |
| DE8282106293T DE3280112D1 (en) | 1981-07-17 | 1982-07-14 | AMORPHOUS SEMICONDUCTOR AND PHOTOVOLTAIC DEVICE MADE OF AMORPHIC SILICON. |
| EP88117644A EP0309000B1 (en) | 1981-07-17 | 1982-07-14 | Amorphous semiconductor and amorphous silicon photovoltaic device |
| EP82106293A EP0070509B2 (en) | 1981-07-17 | 1982-07-14 | Amorphous semiconductor and amorphous silicon photovoltaic device |
| DE8888117644T DE3280418T2 (en) | 1981-07-17 | 1982-07-14 | AMORPHOUS SEMICONDUCTOR AND PHOTOVOLTAIC DEVICE MADE OF AMORPHOUS SILICON. |
| US06/399,312 US4450316A (en) | 1981-07-17 | 1982-07-19 | Amorphous silicon photovoltaic device having two-layer transparent electrode |
| US06/552,951 US4499331A (en) | 1981-07-17 | 1983-11-17 | Amorphous semiconductor and amorphous silicon photovoltaic device |
| US06/552,952 US4491682A (en) | 1981-07-17 | 1983-11-17 | Amorphous silicon photovoltaic device including a two-layer transparent electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56112572A JPS5814583A (en) | 1981-07-17 | 1981-07-17 | Amorphous semiconductor and amorphous semiconductor- amorphous silicon heterojunction photo voltaic element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5814583A true JPS5814583A (en) | 1983-01-27 |
| JPH0554272B2 JPH0554272B2 (en) | 1993-08-12 |
Family
ID=14590063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56112572A Granted JPS5814583A (en) | 1981-07-17 | 1981-07-17 | Amorphous semiconductor and amorphous semiconductor- amorphous silicon heterojunction photo voltaic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5814583A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61232685A (en) * | 1985-04-09 | 1986-10-16 | Agency Of Ind Science & Technol | Amorphous silicon solar battery and manufacture thereof |
| US4803901A (en) * | 1985-10-07 | 1989-02-14 | Toyota Jidosha Kabushiki Kaisha | Method and system for detecting the rotation rate of the output shaft of a torque converter |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0853201A (en) * | 1994-08-10 | 1996-02-27 | Hiromi Hatakeyama | Dust box |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5464981A (en) * | 1977-10-12 | 1979-05-25 | Energy Conversion Devices Inc | High temperature amorphous semiconductor member and method of producing same |
| JPS5513938A (en) * | 1978-07-17 | 1980-01-31 | Shunpei Yamazaki | Photoelectronic conversion semiconductor device and its manufacturing method |
-
1981
- 1981-07-17 JP JP56112572A patent/JPS5814583A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5464981A (en) * | 1977-10-12 | 1979-05-25 | Energy Conversion Devices Inc | High temperature amorphous semiconductor member and method of producing same |
| JPS5513938A (en) * | 1978-07-17 | 1980-01-31 | Shunpei Yamazaki | Photoelectronic conversion semiconductor device and its manufacturing method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61232685A (en) * | 1985-04-09 | 1986-10-16 | Agency Of Ind Science & Technol | Amorphous silicon solar battery and manufacture thereof |
| US4803901A (en) * | 1985-10-07 | 1989-02-14 | Toyota Jidosha Kabushiki Kaisha | Method and system for detecting the rotation rate of the output shaft of a torque converter |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0554272B2 (en) | 1993-08-12 |
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