GB1525247A - Integrated complementary vertical transistors and method - Google Patents

Integrated complementary vertical transistors and method

Info

Publication number
GB1525247A
GB1525247A GB38498/75A GB3849875A GB1525247A GB 1525247 A GB1525247 A GB 1525247A GB 38498/75 A GB38498/75 A GB 38498/75A GB 3849875 A GB3849875 A GB 3849875A GB 1525247 A GB1525247 A GB 1525247A
Authority
GB
United Kingdom
Prior art keywords
region
type
doped
regions
boron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB38498/75A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1525247A publication Critical patent/GB1525247A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8228—Complementary devices, e.g. complementary transistors
    • H01L21/82285—Complementary vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

1525247 Integrated circuits WESTERN ELECTRIC CO Inc 19 Sept 1975 [19 Sept 1974] 38498/75 Heading H1K Complementary bipolar transistors of similar characteristics are provided in a semiconductor body comprising a moderately-doped n-type epitaxial layer 13 on a lightly-doped p-type substrate 12. The pnp transistor 10 comprises a lightly phosphorus-doped n-type buried isolation region 14 preferably formed by diffusion of ion-implanted phosphorus atoms, a heavilydoped (preferably with boron) P<SP>+</SP> type buried collector region 15 within the isolation region 14, a part 24 of the epitaxial layer 13 overlying the region 15 and converted to p-type conductivity, e.g. by boron or aluminium ion implantation, an n-type base region 16 and a p-type emitter region 17, preferably phosphorus implanted and boron diffused respectively. Highly doped contact regions 19, 18, 20 may also be provided. The npn transistor 11 comprises a heavily arsenic or antimony doped n<SP>+</SP> type buried collector region 30, either diffused or implanted, a heavily doped p<SP>+</SP>-type buried isolation region 31 laterally surrounding the region 30, a p-type base region 32 within the epitaxial layer 13 above the region 30 and an n-type emitter region 33 within the region 32. Once again heavily-doped contact regions 37, 34, 35 may be provided. The invention requires the regions 14, 30 and 15/31 to be formed in that order, and preferably the regions 16, 32, 17 and 33 are subsequently formed in that order. The various heat treatments preferably occur at successively lower temperatures in order that the first-formed regions are not disrupted during the later heating steps.
GB38498/75A 1974-09-19 1975-09-19 Integrated complementary vertical transistors and method Expired GB1525247A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50757074A 1974-09-19 1974-09-19

Publications (1)

Publication Number Publication Date
GB1525247A true GB1525247A (en) 1978-09-20

Family

ID=24019174

Family Applications (1)

Application Number Title Priority Date Filing Date
GB38498/75A Expired GB1525247A (en) 1974-09-19 1975-09-19 Integrated complementary vertical transistors and method

Country Status (10)

Country Link
JP (1) JPS5157172A (en)
BE (1) BE833455A (en)
CA (1) CA1038968A (en)
DE (1) DE2541161A1 (en)
ES (1) ES440909A0 (en)
FR (1) FR2285717A1 (en)
GB (1) GB1525247A (en)
IT (1) IT1042581B (en)
NL (1) NL7510994A (en)
SE (1) SE403214B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55143064A (en) * 1979-04-24 1980-11-08 Nec Corp Semiconductor device
JPS57106046A (en) * 1980-12-23 1982-07-01 Toshiba Corp Manufacture of semiconductor device
JPH0713969B2 (en) * 1986-01-13 1995-02-15 三洋電機株式会社 Vertical PNP transistor
GB2186117B (en) * 1986-01-30 1989-11-01 Sgs Microelettronica Spa Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication
EP0347550A3 (en) * 1988-06-21 1991-08-28 Texas Instruments Incorporated Process for fabricating isolated vertical and super beta bipolar transistors

Also Published As

Publication number Publication date
IT1042581B (en) 1980-01-30
CA1038968A (en) 1978-09-19
SE7510075L (en) 1976-03-22
FR2285717B1 (en) 1980-04-30
DE2541161A1 (en) 1976-04-01
JPS5157172A (en) 1976-05-19
NL7510994A (en) 1976-03-23
BE833455A (en) 1976-01-16
SE403214B (en) 1978-07-31
FR2285717A1 (en) 1976-04-16
ES440909A0 (en) 1977-03-16

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee