GB1525247A - Integrated complementary vertical transistors and method - Google Patents
Integrated complementary vertical transistors and methodInfo
- Publication number
- GB1525247A GB1525247A GB38498/75A GB3849875A GB1525247A GB 1525247 A GB1525247 A GB 1525247A GB 38498/75 A GB38498/75 A GB 38498/75A GB 3849875 A GB3849875 A GB 3849875A GB 1525247 A GB1525247 A GB 1525247A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- type
- doped
- regions
- boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000295 complement effect Effects 0.000 title abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 3
- 229910052796 boron Inorganic materials 0.000 abstract 3
- 238000002955 isolation Methods 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 125000004437 phosphorous atom Chemical group 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
- H01L21/82285—Complementary vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
1525247 Integrated circuits WESTERN ELECTRIC CO Inc 19 Sept 1975 [19 Sept 1974] 38498/75 Heading H1K Complementary bipolar transistors of similar characteristics are provided in a semiconductor body comprising a moderately-doped n-type epitaxial layer 13 on a lightly-doped p-type substrate 12. The pnp transistor 10 comprises a lightly phosphorus-doped n-type buried isolation region 14 preferably formed by diffusion of ion-implanted phosphorus atoms, a heavilydoped (preferably with boron) P<SP>+</SP> type buried collector region 15 within the isolation region 14, a part 24 of the epitaxial layer 13 overlying the region 15 and converted to p-type conductivity, e.g. by boron or aluminium ion implantation, an n-type base region 16 and a p-type emitter region 17, preferably phosphorus implanted and boron diffused respectively. Highly doped contact regions 19, 18, 20 may also be provided. The npn transistor 11 comprises a heavily arsenic or antimony doped n<SP>+</SP> type buried collector region 30, either diffused or implanted, a heavily doped p<SP>+</SP>-type buried isolation region 31 laterally surrounding the region 30, a p-type base region 32 within the epitaxial layer 13 above the region 30 and an n-type emitter region 33 within the region 32. Once again heavily-doped contact regions 37, 34, 35 may be provided. The invention requires the regions 14, 30 and 15/31 to be formed in that order, and preferably the regions 16, 32, 17 and 33 are subsequently formed in that order. The various heat treatments preferably occur at successively lower temperatures in order that the first-formed regions are not disrupted during the later heating steps.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US50757074A | 1974-09-19 | 1974-09-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1525247A true GB1525247A (en) | 1978-09-20 |
Family
ID=24019174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB38498/75A Expired GB1525247A (en) | 1974-09-19 | 1975-09-19 | Integrated complementary vertical transistors and method |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPS5157172A (en) |
BE (1) | BE833455A (en) |
CA (1) | CA1038968A (en) |
DE (1) | DE2541161A1 (en) |
ES (1) | ES440909A0 (en) |
FR (1) | FR2285717A1 (en) |
GB (1) | GB1525247A (en) |
IT (1) | IT1042581B (en) |
NL (1) | NL7510994A (en) |
SE (1) | SE403214B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55143064A (en) * | 1979-04-24 | 1980-11-08 | Nec Corp | Semiconductor device |
JPS57106046A (en) * | 1980-12-23 | 1982-07-01 | Toshiba Corp | Manufacture of semiconductor device |
JPH0713969B2 (en) * | 1986-01-13 | 1995-02-15 | 三洋電機株式会社 | Vertical PNP transistor |
GB2186117B (en) * | 1986-01-30 | 1989-11-01 | Sgs Microelettronica Spa | Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication |
EP0347550A3 (en) * | 1988-06-21 | 1991-08-28 | Texas Instruments Incorporated | Process for fabricating isolated vertical and super beta bipolar transistors |
-
1975
- 1975-08-27 CA CA234,241A patent/CA1038968A/en not_active Expired
- 1975-09-10 SE SE7510075A patent/SE403214B/en unknown
- 1975-09-16 IT IT27273/75A patent/IT1042581B/en active
- 1975-09-16 DE DE19752541161 patent/DE2541161A1/en not_active Withdrawn
- 1975-09-16 BE BE160072A patent/BE833455A/en unknown
- 1975-09-18 NL NL7510994A patent/NL7510994A/en not_active Application Discontinuation
- 1975-09-18 JP JP50112210A patent/JPS5157172A/ja active Pending
- 1975-09-18 FR FR7528624A patent/FR2285717A1/en active Granted
- 1975-09-19 GB GB38498/75A patent/GB1525247A/en not_active Expired
-
1976
- 1976-01-23 ES ES440909A patent/ES440909A0/en active Pending
Also Published As
Publication number | Publication date |
---|---|
IT1042581B (en) | 1980-01-30 |
CA1038968A (en) | 1978-09-19 |
SE7510075L (en) | 1976-03-22 |
FR2285717B1 (en) | 1980-04-30 |
DE2541161A1 (en) | 1976-04-01 |
JPS5157172A (en) | 1976-05-19 |
NL7510994A (en) | 1976-03-23 |
BE833455A (en) | 1976-01-16 |
SE403214B (en) | 1978-07-31 |
FR2285717A1 (en) | 1976-04-16 |
ES440909A0 (en) | 1977-03-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |