SE403214B - PROCEDURE FOR MANUFACTURING MONOLITICAL, COMPLEMENTARY TRANSISTORS - Google Patents
PROCEDURE FOR MANUFACTURING MONOLITICAL, COMPLEMENTARY TRANSISTORSInfo
- Publication number
- SE403214B SE403214B SE7510075A SE7510075A SE403214B SE 403214 B SE403214 B SE 403214B SE 7510075 A SE7510075 A SE 7510075A SE 7510075 A SE7510075 A SE 7510075A SE 403214 B SE403214 B SE 403214B
- Authority
- SE
- Sweden
- Prior art keywords
- monolitical
- procedure
- manufacturing
- complementary transistors
- transistors
- Prior art date
Links
- 230000000295 complement effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
- H01L21/82285—Complementary vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US50757074A | 1974-09-19 | 1974-09-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7510075L SE7510075L (en) | 1976-03-22 |
SE403214B true SE403214B (en) | 1978-07-31 |
Family
ID=24019174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7510075A SE403214B (en) | 1974-09-19 | 1975-09-10 | PROCEDURE FOR MANUFACTURING MONOLITICAL, COMPLEMENTARY TRANSISTORS |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPS5157172A (en) |
BE (1) | BE833455A (en) |
CA (1) | CA1038968A (en) |
DE (1) | DE2541161A1 (en) |
ES (1) | ES440909A0 (en) |
FR (1) | FR2285717A1 (en) |
GB (1) | GB1525247A (en) |
IT (1) | IT1042581B (en) |
NL (1) | NL7510994A (en) |
SE (1) | SE403214B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55143064A (en) * | 1979-04-24 | 1980-11-08 | Nec Corp | Semiconductor device |
JPS57106046A (en) * | 1980-12-23 | 1982-07-01 | Toshiba Corp | Manufacture of semiconductor device |
JPH0713969B2 (en) * | 1986-01-13 | 1995-02-15 | 三洋電機株式会社 | Vertical PNP transistor |
GB2186117B (en) * | 1986-01-30 | 1989-11-01 | Sgs Microelettronica Spa | Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication |
EP0347550A3 (en) * | 1988-06-21 | 1991-08-28 | Texas Instruments Incorporated | Process for fabricating isolated vertical and super beta bipolar transistors |
-
1975
- 1975-08-27 CA CA234,241A patent/CA1038968A/en not_active Expired
- 1975-09-10 SE SE7510075A patent/SE403214B/en unknown
- 1975-09-16 IT IT27273/75A patent/IT1042581B/en active
- 1975-09-16 DE DE19752541161 patent/DE2541161A1/en not_active Withdrawn
- 1975-09-16 BE BE160072A patent/BE833455A/en unknown
- 1975-09-18 NL NL7510994A patent/NL7510994A/en not_active Application Discontinuation
- 1975-09-18 JP JP50112210A patent/JPS5157172A/ja active Pending
- 1975-09-18 FR FR7528624A patent/FR2285717A1/en active Granted
- 1975-09-19 GB GB38498/75A patent/GB1525247A/en not_active Expired
-
1976
- 1976-01-23 ES ES440909A patent/ES440909A0/en active Pending
Also Published As
Publication number | Publication date |
---|---|
IT1042581B (en) | 1980-01-30 |
CA1038968A (en) | 1978-09-19 |
SE7510075L (en) | 1976-03-22 |
FR2285717B1 (en) | 1980-04-30 |
DE2541161A1 (en) | 1976-04-01 |
JPS5157172A (en) | 1976-05-19 |
NL7510994A (en) | 1976-03-23 |
GB1525247A (en) | 1978-09-20 |
BE833455A (en) | 1976-01-16 |
FR2285717A1 (en) | 1976-04-16 |
ES440909A0 (en) | 1977-03-16 |
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