GB1494802A - Bipolar transistors - Google Patents

Bipolar transistors

Info

Publication number
GB1494802A
GB1494802A GB26264/75A GB2626475A GB1494802A GB 1494802 A GB1494802 A GB 1494802A GB 26264/75 A GB26264/75 A GB 26264/75A GB 2626475 A GB2626475 A GB 2626475A GB 1494802 A GB1494802 A GB 1494802A
Authority
GB
United Kingdom
Prior art keywords
bipolar transistors
electrode
heading
aug
june
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB26264/75A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1494802A publication Critical patent/GB1494802A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

1494802 Semi-conductor devices SIEMENS AG 20 June 1975 [16 Aug 1974] 26264/75 Heading H1K An emitter electrode 10 on a bipolar transistor consists of initially undoped polyerystalline silicon which has been doped by diffusion or ion implantation. The very thin emitter region 16 of Fig. 2 may be formed by the dopant penetrating through the electrode 10.
GB26264/75A 1974-08-16 1975-06-20 Bipolar transistors Expired GB1494802A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2439408A DE2439408A1 (en) 1974-08-16 1974-08-16 SEMICONDUCTOR COMPONENT

Publications (1)

Publication Number Publication Date
GB1494802A true GB1494802A (en) 1977-12-14

Family

ID=5923395

Family Applications (1)

Application Number Title Priority Date Filing Date
GB26264/75A Expired GB1494802A (en) 1974-08-16 1975-06-20 Bipolar transistors

Country Status (9)

Country Link
JP (1) JPS5164370A (en)
AT (1) AT372805B (en)
BR (1) BR7505197A (en)
CA (1) CA1041673A (en)
DE (1) DE2439408A1 (en)
FR (1) FR2282166A1 (en)
GB (1) GB1494802A (en)
IT (1) IT1040480B (en)
ZA (1) ZA754328B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224448A (en) * 1985-03-29 1986-10-06 Toshiba Corp Manufacture of semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4855663A (en) * 1971-11-10 1973-08-04
JPS499186A (en) * 1972-05-11 1974-01-26

Also Published As

Publication number Publication date
FR2282166B1 (en) 1980-10-17
AT372805B (en) 1983-11-25
DE2439408A1 (en) 1976-02-26
CA1041673A (en) 1978-10-31
ATA546075A (en) 1983-03-15
FR2282166A1 (en) 1976-03-12
JPS5164370A (en) 1976-06-03
BR7505197A (en) 1976-08-03
ZA754328B (en) 1976-06-30
IT1040480B (en) 1979-12-20

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930620