GB1487747A - Photovoltaic cells - Google Patents

Photovoltaic cells

Info

Publication number
GB1487747A
GB1487747A GB4153474A GB4153474A GB1487747A GB 1487747 A GB1487747 A GB 1487747A GB 4153474 A GB4153474 A GB 4153474A GB 4153474 A GB4153474 A GB 4153474A GB 1487747 A GB1487747 A GB 1487747A
Authority
GB
United Kingdom
Prior art keywords
layer
snox
component
cds
cuso
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4153474A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Photon Power Inc
Original Assignee
Photon Power Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Photon Power Inc filed Critical Photon Power Inc
Priority to NL7412624A priority Critical patent/NL7412624A/en
Priority to BE148854A priority patent/BE820294A/en
Priority to GB4153474A priority patent/GB1487747A/en
Priority to CH1325374A priority patent/CH591165A5/en
Publication of GB1487747A publication Critical patent/GB1487747A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
    • H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

1487747 Photocells PHOTON POWER Inc 24 Sept 1974 41534/74 Heading H1K A photovoltaic cell is formed by floating a substrate 10 in a constant temperature bath of molten material, with a layer 11 of SnOx on one surface of the substrate 10 being exposed, spraying on to the SnOx layer 11 a Cd salt and a sulphur-containing salt sufficiently slowly so as not to alter the temperature of the layer 11 and to grow a layer 12 of CdS microcrystals forming one component of a heterojunction on the layer 11, applying a Cu 2 S layer 13 forming the second component of the heterojunction on the layer 12, and applying electrodes 15, 16 on the second component layer 13. During the spraying step the growing CdS layer is irradiated with intense U.V. radiation. A CuSO 4 layer 14 is applied to the Cu 2 S layer 13. The electrodes 15, 16 are Cu and Zn respectively and they are heated to 500‹ F. to diffuse the Zn down to the SnOx layer 11 while the CuSO 4 reacts with the Cu to form a Cu-CuO rectifying layer which allows current flow out of the electrode 15 only so that the effect of short-circuiting pin holes in the CdS layer 12 is obviated.
GB4153474A 1974-09-24 1974-09-24 Photovoltaic cells Expired GB1487747A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
NL7412624A NL7412624A (en) 1974-09-24 1974-09-24 Photovoltaic solar cells - made by heating substrate on molten tin and spraying it with cadmium chloride and copper acetate
BE148854A BE820294A (en) 1974-09-24 1974-09-24 Photovoltaic solar cells - made by heating substrate on molten tin and spraying it with cadmium chloride and copper acetate
GB4153474A GB1487747A (en) 1974-09-24 1974-09-24 Photovoltaic cells
CH1325374A CH591165A5 (en) 1974-09-24 1974-10-02 Microcrystalline layer deposition in photovoltaic cell prodn. - including controlling substrate temp. by floating in a melt bath

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4153474A GB1487747A (en) 1974-09-24 1974-09-24 Photovoltaic cells

Publications (1)

Publication Number Publication Date
GB1487747A true GB1487747A (en) 1977-10-05

Family

ID=10420139

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4153474A Expired GB1487747A (en) 1974-09-24 1974-09-24 Photovoltaic cells

Country Status (1)

Country Link
GB (1) GB1487747A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0186351A2 (en) * 1984-12-28 1986-07-02 Standard Oil Commercial Development Company Method of making current collector grid and materials therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0186351A2 (en) * 1984-12-28 1986-07-02 Standard Oil Commercial Development Company Method of making current collector grid and materials therefor
EP0186351A3 (en) * 1984-12-28 1987-08-26 Sohio Commercial Development Co. Method of making current collector grid and materials therefor

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee