SE7909584L - SOLAR CELL WITH GROUND GAY TRANSITION - Google Patents
SOLAR CELL WITH GROUND GAY TRANSITIONInfo
- Publication number
- SE7909584L SE7909584L SE7909584A SE7909584A SE7909584L SE 7909584 L SE7909584 L SE 7909584L SE 7909584 A SE7909584 A SE 7909584A SE 7909584 A SE7909584 A SE 7909584A SE 7909584 L SE7909584 L SE 7909584L
- Authority
- SE
- Sweden
- Prior art keywords
- solar cells
- gay
- transition
- ground
- solar cell
- Prior art date
Links
- 230000007704 transition Effects 0.000 title 1
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000002048 anodisation reaction Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Improvements in shallow-homojunction solar cells based upon a plurality of layers of a direct gap semi conductor material such as GaAs, as well as their fabrication, are disclosed. The shallow-homojunction solar cells have a n+/p/p+ structure (26, 24, 22) in which the n+ top layer (26) is limited to a thickness which permits significant carrier generation to occur in a lower semiconductor layer (24). An antireflection coating (28) is applied over the n+ top layer (26), and a particularly preferred method for applying the antireflection coating is by anodization. These solar cells can be grown on relatively inexpensive substrates, if desired, such as silicon or germanium.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US88907878A | 1978-03-22 | 1978-03-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7909584L true SE7909584L (en) | 1979-11-20 |
SE439079B SE439079B (en) | 1985-05-28 |
Family
ID=25394474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7909584A SE439079B (en) | 1978-03-22 | 1979-11-20 | SET TO MAKE A PHOTO ELECTRIC DEVICE WITH BASIC HOME MOVEMENT |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0011629A4 (en) |
JP (1) | JPS55500168A (en) |
CA (1) | CA1137604A (en) |
SE (1) | SE439079B (en) |
WO (1) | WO1979000813A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4753683A (en) * | 1985-09-09 | 1988-06-28 | Hughes Aircraft Company | Gallium arsenide solar cell system |
EP0236447A1 (en) * | 1985-09-09 | 1987-09-16 | Hughes Aircraft Company | Gallium arsenide solar cell system |
US5286698A (en) * | 1989-04-25 | 1994-02-15 | University Of Notre Dame Du Lac | Metal oxide catalysts |
US10154923B2 (en) | 2010-07-15 | 2018-12-18 | Eyenovia, Inc. | Drop generating device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3758348A (en) * | 1970-08-13 | 1973-09-11 | Westinghouse Electric Corp | Method for preparing solar cells |
US3982265A (en) * | 1975-09-19 | 1976-09-21 | Bell Telephone Laboratories, Incorporated | Devices containing aluminum-V semiconductor and method for making |
US4128843A (en) * | 1977-10-14 | 1978-12-05 | Honeywell Inc. | GaP Directed field UV photodiode |
-
1979
- 1979-03-21 JP JP50056879A patent/JPS55500168A/ja active Pending
- 1979-03-21 WO PCT/US1979/000181 patent/WO1979000813A1/en unknown
- 1979-03-22 CA CA000324090A patent/CA1137604A/en not_active Expired
- 1979-10-23 EP EP19790900329 patent/EP0011629A4/en not_active Ceased
- 1979-11-20 SE SE7909584A patent/SE439079B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0011629A4 (en) | 1980-10-17 |
WO1979000813A1 (en) | 1979-10-18 |
SE439079B (en) | 1985-05-28 |
JPS55500168A (en) | 1980-03-27 |
CA1137604A (en) | 1982-12-14 |
EP0011629A1 (en) | 1980-06-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |
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