GB1474942A - Semiconductor light-emitting diode device and method for producing same - Google Patents

Semiconductor light-emitting diode device and method for producing same

Info

Publication number
GB1474942A
GB1474942A GB1936374A GB1936374A GB1474942A GB 1474942 A GB1474942 A GB 1474942A GB 1936374 A GB1936374 A GB 1936374A GB 1936374 A GB1936374 A GB 1936374A GB 1474942 A GB1474942 A GB 1474942A
Authority
GB
United Kingdom
Prior art keywords
layer
layers
compensated
type
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1936374A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SU1922832A external-priority patent/SU511794A1/en
Priority claimed from SU7301924913A external-priority patent/SU470244A1/en
Application filed by Individual filed Critical Individual
Publication of GB1474942A publication Critical patent/GB1474942A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)

Abstract

1474942 Electroluminescence RACHARMAKADZE R I CHIKOVANI and Z I ALFEROV 2 May 1974 [28 May 1973 31 May 1973 12 June 1973] 19363/74 Heading C4S [Also in Division H1] A light emitting diode comprises a P+ type gallium arsenide substrate on which have successively been deposited P, compensated and N type layers of Al x Ga 1-x As, the P and N layers being doped with Zn and Te respectively and the compensated layer with both Zn and Te and the value of x lying between 0�3 and 0�37 in the P layer, between 0�4 and 0�65 in the N layer, and within 0�05 of that in the P layer in the compensated layer. As described the substrate and the N type layer are directly ohmically contacted by layers of Al, Ni, Cu, Sn, Ag, Au or alloys thereof. Alternatively an N + or N + and N + + layers may be disposed between the N type layer and its contact. The N, N+ and N+ + layers may each cover the whole or only part of the immediately underlying layer. Numerous examples are described with various layer and substrate thicknesses and doping and are preferably produced by liquid phase epitaxy from two melts of Ga, Al and As containing Zn and Te, and Te respectively. Initially the GaAs substrate is contacted by the Zn and Te containing melt and after a period of cooling to deposit the P type layer the other melt is added and cooling continued to deposit the compensated and N layers from the mixed melt the cooling rate being increased in two steps to provide the N + and N + + layers where required, any desired areal limitation of layers being achieved by selective etching. Processing details are given.
GB1936374A 1973-05-28 1974-05-02 Semiconductor light-emitting diode device and method for producing same Expired GB1474942A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SU1922832A SU511794A1 (en) 1973-05-28 1973-05-28 Method for producing semiconductor light emitting structure
SU7301924913A SU470244A1 (en) 1973-05-31 1973-05-31 Semiconductor light-emitting structure
SU1930156 1973-06-12

Publications (1)

Publication Number Publication Date
GB1474942A true GB1474942A (en) 1977-05-25

Family

ID=27356255

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1936374A Expired GB1474942A (en) 1973-05-28 1974-05-02 Semiconductor light-emitting diode device and method for producing same

Country Status (8)

Country Link
CA (1) CA1017436A (en)
CH (1) CH571770A5 (en)
CS (1) CS172632B1 (en)
DD (1) DD110582A1 (en)
DE (1) DE2420741C2 (en)
FR (1) FR2232169B1 (en)
GB (1) GB1474942A (en)
IT (1) IT1043910B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2475803A1 (en) * 1980-02-07 1981-08-14 Zaidan Hojin Handotai Kenkyu HETERO-JUNCTION LIGHT EMITTING DIODE

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1585732A (en) * 1967-10-02 1970-01-30
US3537029A (en) * 1968-06-10 1970-10-27 Rca Corp Semiconductor laser producing light at two wavelengths simultaneously

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2475803A1 (en) * 1980-02-07 1981-08-14 Zaidan Hojin Handotai Kenkyu HETERO-JUNCTION LIGHT EMITTING DIODE
DE3104082A1 (en) * 1980-02-07 1982-01-07 Stanley Electric Co. Ldt., Tokyo Light-emitting heterojunction diode

Also Published As

Publication number Publication date
DE2420741A1 (en) 1975-01-02
FR2232169A1 (en) 1974-12-27
CH571770A5 (en) 1976-01-15
CS172632B1 (en) 1977-01-28
FR2232169B1 (en) 1977-03-04
DD110582A1 (en) 1974-12-20
DE2420741C2 (en) 1982-10-28
IT1043910B (en) 1980-02-29
CA1017436A (en) 1977-09-13

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee