DD110582A1 - - Google Patents

Info

Publication number: DD110582A1
Authority: DD; German Democratic Republic

Application number

DD17810074A

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-05-28

Filing date

1974-04-24

Publication date

1974-12-20

1973-05-28 Priority claimed from SU1922832A external-priority patent/SU511794A1/ru

1973-05-31 Priority claimed from SU7301924913A external-priority patent/SU470244A1/ru

1974-04-24 Application filed filed Critical

1974-12-20 Publication of DD110582A1 publication Critical patent/DD110582A1/xx

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Chemical & Material Sciences (AREA)
Materials Engineering (AREA)
Crystallography & Structural Chemistry (AREA)
Inorganic Chemistry (AREA)
Led Devices (AREA)

DD17810074A 1973-05-28 1974-04-24 DD110582A1 (xx)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
SU1922832A SU511794A1 (ru)	1973-05-28	1973-05-28	Способ получени полупроводниковой светоизлучающей структуры
SU7301924913A SU470244A1 (ru)	1973-05-31	1973-05-31	Полупроводникова светоизлучающа структура
SU1930156		1973-06-12

Publications (1)

Publication Number	Publication Date
DD110582A1 true DD110582A1 (xx)	1974-12-20

Family

ID=27356255

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DD17810074A DD110582A1 (xx)	1973-05-28	1974-04-24

Country Status (8)

Country	Link
CA (1)	CA1017436A (xx)
CH (1)	CH571770A5 (xx)
CS (1)	CS172632B1 (xx)
DD (1)	DD110582A1 (xx)
DE (1)	DE2420741C2 (xx)
FR (1)	FR2232169B1 (xx)
GB (1)	GB1474942A (xx)
IT (1)	IT1043910B (xx)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2070859B (en) *	1980-02-07	1984-03-21	Stanley Electric Co Ltd	Hetero-junction light-emitting diode

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR1585732A (xx) *	1967-10-02	1970-01-30
US3537029A (en) *	1968-06-10	1970-10-27	Rca Corp	Semiconductor laser producing light at two wavelengths simultaneously

1974
- 1974-04-24 DD DD17810074A patent/DD110582A1/xx unknown
- 1974-04-25 CH CH568174A patent/CH571770A5/xx not_active IP Right Cessation
- 1974-04-29 FR FR7414864A patent/FR2232169B1/fr not_active Expired
- 1974-04-29 DE DE19742420741 patent/DE2420741C2/de not_active Expired
- 1974-05-02 GB GB1936374A patent/GB1474942A/en not_active Expired
- 1974-05-09 CA CA199,585A patent/CA1017436A/en not_active Expired
- 1974-05-10 IT IT4139374A patent/IT1043910B/it active
- 1974-05-17 CS CS353174A patent/CS172632B1/cs unknown

Also Published As

Publication number	Publication date
DE2420741A1 (de)	1975-01-02
FR2232169A1 (xx)	1974-12-27
CH571770A5 (xx)	1976-01-15
CS172632B1 (xx)	1977-01-28
FR2232169B1 (xx)	1977-03-04
DE2420741C2 (de)	1982-10-28
IT1043910B (it)	1980-02-29
CA1017436A (en)	1977-09-13
GB1474942A (en)	1977-05-25

Publication	Publication Date	Title
AR201758A1 (xx)	1975-04-15
AU476761B2 (xx)	1976-09-30
AU465372B2 (xx)	1975-09-25
AR201235Q (xx)	1975-02-21
AR201231Q (xx)	1975-02-21
AU474593B2 (xx)	1976-07-29
AU474511B2 (xx)	1976-07-22
AU474838B2 (xx)	1976-08-05
AU465453B2 (xx)	1975-09-25
AU465434B2 (xx)	1975-09-25
AU471343B2 (xx)	1976-04-15
AU450229B2 (xx)	1974-07-04
AU476714B2 (xx)	1976-09-30
AR201229Q (xx)	1975-02-21
AU466283B2 (xx)	1975-10-23
AU476696B2 (xx)	1976-09-30
AU472848B2 (xx)	1976-06-03
AR199451A1 (xx)	1974-08-30
AU477823B2 (xx)	1975-06-19
AU461342B2 (xx)	1975-05-22
AU471461B2 (xx)	1976-04-29
AR200256A1 (xx)	1974-10-31
AU476873B1 (xx)	1975-01-09
AR210729A1 (xx)	1977-09-15
AU477824B2 (xx)	1975-07-17