GB1457318A - Protective coatings for field effect transistors - Google Patents

Protective coatings for field effect transistors

Info

Publication number
GB1457318A
GB1457318A GB1543374A GB1543374A GB1457318A GB 1457318 A GB1457318 A GB 1457318A GB 1543374 A GB1543374 A GB 1543374A GB 1543374 A GB1543374 A GB 1543374A GB 1457318 A GB1457318 A GB 1457318A
Authority
GB
United Kingdom
Prior art keywords
mirror
layers
alternately
field effect
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1543374A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1457318A publication Critical patent/GB1457318A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

1457318 Semiconductor devices INTERNATIONAL BUSINESS MACHINES CORP 8 April 1974 [3 May 1973] 15433/74 Heading H1K Undesired effects caused by light incident on a field effect transistor are mitigated by the provision on its surface of a multi-layer dielectric mirror. As described the mirror consists of a plurality of layers of alternately high and low refractive index material with high index layers adjacent both the substrate and the ambient. Zinc and antimony sulphides, calcium and magnesium fluorides, silicon, titania and silicon nitride may be used in the mirror, the materials being chosen for compatibility and to have a refractive index ratio of # 1À3-1. In a single IGFET structure based on P-type silicon the mirror, comprising 29 layers alternately of zinc sulphide and cryolite (though smaller numbers of layers are almost as effective) may constitute the gate dielectric or if the device is a MOSFET may overlie the gate. In a display structure (Fig. 5) comprising an array of MOSFETs on an N-type Si wafer a further layer 58 of silica 23 is interposed between the mirror and the gates, the drains of the MOSFETs contacting a liquid crystal layer bounded on its upper face by a transparent electroded cover 60. The layers can be formed by alternately bombarding sources of the two dielectric materials with an electron beam.
GB1543374A 1973-05-03 1974-04-08 Protective coatings for field effect transistors Expired GB1457318A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35704773A 1973-05-03 1973-05-03

Publications (1)

Publication Number Publication Date
GB1457318A true GB1457318A (en) 1976-12-01

Family

ID=23404086

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1543374A Expired GB1457318A (en) 1973-05-03 1974-04-08 Protective coatings for field effect transistors

Country Status (6)

Country Link
JP (1) JPS5247306B2 (en)
CA (1) CA1007383A (en)
DE (1) DE2420257A1 (en)
FR (1) FR2228298B1 (en)
GB (1) GB1457318A (en)
IT (1) IT1006472B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1774592A1 (en) * 2004-07-26 2007-04-18 Koninklijke Philips Electronics N.V. Chip with light protection layer
DE102014100469A1 (en) * 2013-11-29 2015-06-03 Epcos Ag Electronic component and use thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54159307U (en) * 1978-04-28 1979-11-07
JPH02249230A (en) * 1988-11-25 1990-10-05 Fujitsu Ltd Forming method for metal electrode

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1530274A (en) * 1966-07-08 1968-06-21 Westinghouse Electric Corp Semiconductor solar cell

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1774592A1 (en) * 2004-07-26 2007-04-18 Koninklijke Philips Electronics N.V. Chip with light protection layer
DE102014100469A1 (en) * 2013-11-29 2015-06-03 Epcos Ag Electronic component and use thereof
US10225965B2 (en) 2013-11-29 2019-03-05 Epcos Ag Electronic component and use thereof

Also Published As

Publication number Publication date
FR2228298B1 (en) 1978-01-06
JPS5247306B2 (en) 1977-12-01
DE2420257A1 (en) 1974-11-14
CA1007383A (en) 1977-03-22
JPS5011184A (en) 1975-02-05
FR2228298A1 (en) 1974-11-29
IT1006472B (en) 1976-09-30

Similar Documents

Publication Publication Date Title
KR950002075A (en) Semiconductor device and manufacturing method thereof
JPS55120182A (en) Photoelectric converter
KR960008377A (en) Active Matrix Liquid Crystal Display
KR960039436A (en) Thin film transistor and liquid crystal display device using same
KR920010884A (en) Semiconductor Field Effect Transistor, Manufacturing Method and Thin Film Transistor
KR970075999A (en) Liquid crystal panel
JPS56140321A (en) Display device
US4956680A (en) Thin film transistor
KR970030914A (en) Semiconductor devices
JPS54152894A (en) Liquid crystal display unit
KR970062785A (en) LCD Display
JPS55110476A (en) Solidstate image sensor
GB1457318A (en) Protective coatings for field effect transistors
JPS5688363A (en) Field effect transistor
KR950004600A (en) Polycrystalline silicon thin film transistor
KR920008967A (en) Semiconductor device
KR940022833A (en) Semiconductor device
JPS567480A (en) Film transistor
JPS5681966A (en) Input protecting circuit for semiconductor device
KR850005162A (en) Field effect transistor
JPS644070A (en) Thin film transistor and manufacture thereof
JPS6476035A (en) Manufacture of tft panel
JPS62172758A (en) Structure of thin film transistor
JPS5717174A (en) Semiconductor device
JPS57210657A (en) Array substrate for display device

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee