GB1457318A - Protective coatings for field effect transistors - Google Patents
Protective coatings for field effect transistorsInfo
- Publication number
- GB1457318A GB1457318A GB1543374A GB1543374A GB1457318A GB 1457318 A GB1457318 A GB 1457318A GB 1543374 A GB1543374 A GB 1543374A GB 1543374 A GB1543374 A GB 1543374A GB 1457318 A GB1457318 A GB 1457318A
- Authority
- GB
- United Kingdom
- Prior art keywords
- mirror
- layers
- alternately
- field effect
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
1457318 Semiconductor devices INTERNATIONAL BUSINESS MACHINES CORP 8 April 1974 [3 May 1973] 15433/74 Heading H1K Undesired effects caused by light incident on a field effect transistor are mitigated by the provision on its surface of a multi-layer dielectric mirror. As described the mirror consists of a plurality of layers of alternately high and low refractive index material with high index layers adjacent both the substrate and the ambient. Zinc and antimony sulphides, calcium and magnesium fluorides, silicon, titania and silicon nitride may be used in the mirror, the materials being chosen for compatibility and to have a refractive index ratio of # 1À3-1. In a single IGFET structure based on P-type silicon the mirror, comprising 29 layers alternately of zinc sulphide and cryolite (though smaller numbers of layers are almost as effective) may constitute the gate dielectric or if the device is a MOSFET may overlie the gate. In a display structure (Fig. 5) comprising an array of MOSFETs on an N-type Si wafer a further layer 58 of silica 23 is interposed between the mirror and the gates, the drains of the MOSFETs contacting a liquid crystal layer bounded on its upper face by a transparent electroded cover 60. The layers can be formed by alternately bombarding sources of the two dielectric materials with an electron beam.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35704773A | 1973-05-03 | 1973-05-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1457318A true GB1457318A (en) | 1976-12-01 |
Family
ID=23404086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1543374A Expired GB1457318A (en) | 1973-05-03 | 1974-04-08 | Protective coatings for field effect transistors |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5247306B2 (en) |
CA (1) | CA1007383A (en) |
DE (1) | DE2420257A1 (en) |
FR (1) | FR2228298B1 (en) |
GB (1) | GB1457318A (en) |
IT (1) | IT1006472B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1774592A1 (en) * | 2004-07-26 | 2007-04-18 | Koninklijke Philips Electronics N.V. | Chip with light protection layer |
DE102014100469A1 (en) * | 2013-11-29 | 2015-06-03 | Epcos Ag | Electronic component and use thereof |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54159307U (en) * | 1978-04-28 | 1979-11-07 | ||
JPH02249230A (en) * | 1988-11-25 | 1990-10-05 | Fujitsu Ltd | Forming method for metal electrode |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1530274A (en) * | 1966-07-08 | 1968-06-21 | Westinghouse Electric Corp | Semiconductor solar cell |
-
1974
- 1974-03-19 FR FR7410667A patent/FR2228298B1/fr not_active Expired
- 1974-04-03 JP JP3706574A patent/JPS5247306B2/ja not_active Expired
- 1974-04-08 CA CA197,094A patent/CA1007383A/en not_active Expired
- 1974-04-08 GB GB1543374A patent/GB1457318A/en not_active Expired
- 1974-04-17 IT IT2150174A patent/IT1006472B/en active
- 1974-04-26 DE DE19742420257 patent/DE2420257A1/en not_active Ceased
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1774592A1 (en) * | 2004-07-26 | 2007-04-18 | Koninklijke Philips Electronics N.V. | Chip with light protection layer |
DE102014100469A1 (en) * | 2013-11-29 | 2015-06-03 | Epcos Ag | Electronic component and use thereof |
US10225965B2 (en) | 2013-11-29 | 2019-03-05 | Epcos Ag | Electronic component and use thereof |
Also Published As
Publication number | Publication date |
---|---|
FR2228298B1 (en) | 1978-01-06 |
JPS5247306B2 (en) | 1977-12-01 |
DE2420257A1 (en) | 1974-11-14 |
CA1007383A (en) | 1977-03-22 |
JPS5011184A (en) | 1975-02-05 |
FR2228298A1 (en) | 1974-11-29 |
IT1006472B (en) | 1976-09-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |