GB1353954A - Methods of producing gallium phosphide light emitting diodes - Google Patents
Methods of producing gallium phosphide light emitting diodesInfo
- Publication number
- GB1353954A GB1353954A GB1353954DA GB1353954A GB 1353954 A GB1353954 A GB 1353954A GB 1353954D A GB1353954D A GB 1353954DA GB 1353954 A GB1353954 A GB 1353954A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- zone
- hydrogen
- nitrogen
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 2
- 229910005540 GaP Inorganic materials 0.000 title 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 title 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 8
- 229910052757 nitrogen Inorganic materials 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 abstract 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 abstract 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 229910052725 zinc Inorganic materials 0.000 abstract 2
- 239000011701 zinc Substances 0.000 abstract 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000006011 Zinc phosphide Substances 0.000 abstract 1
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052790 beryllium Inorganic materials 0.000 abstract 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000003085 diluting agent Substances 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 abstract 1
- 238000011010 flushing procedure Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 abstract 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N hydrogen peroxide Substances OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 239000011777 magnesium Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 150000002978 peroxides Chemical class 0.000 abstract 1
- HOKBIQDJCNTWST-UHFFFAOYSA-N phosphanylidenezinc;zinc Chemical compound [Zn].[Zn]=P.[Zn]=P HOKBIQDJCNTWST-UHFFFAOYSA-N 0.000 abstract 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229940048462 zinc phosphide Drugs 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4229171 | 1971-09-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1353954A true GB1353954A (en) | 1974-05-22 |
Family
ID=10423781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1353954D Expired GB1353954A (en) | 1971-09-10 | 1971-09-10 | Methods of producing gallium phosphide light emitting diodes |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5745068B2 (de) |
| CA (1) | CA974633A (de) |
| DE (1) | DE2243524A1 (de) |
| FR (1) | FR2152751B1 (de) |
| GB (1) | GB1353954A (de) |
| IT (1) | IT967326B (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52147992A (en) * | 1976-06-02 | 1977-12-08 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPH0666270B2 (ja) * | 1985-09-16 | 1994-08-24 | アメリカン テレフオン アンド テレグラフ カムパニ− | リンを含む半導体デバイスの製造方法 |
| JPH01245569A (ja) * | 1988-03-28 | 1989-09-29 | Toshiba Corp | ＧａＰ緑色発光素子とその製造方法 |
| CN116121867B (zh) * | 2023-02-01 | 2023-08-15 | 有研国晶辉新材料有限公司 | 一种光学级磷化镓单晶的制备方法 |
-
1971
- 1971-09-10 GB GB1353954D patent/GB1353954A/en not_active Expired
-
1972
- 1972-09-01 CA CA150,761A patent/CA974633A/en not_active Expired
- 1972-09-05 DE DE19722243524 patent/DE2243524A1/de not_active Ceased
- 1972-09-08 FR FR7231839A patent/FR2152751B1/fr not_active Expired
- 1972-09-09 IT IT2903172A patent/IT967326B/it active
- 1972-09-11 JP JP9113472A patent/JPS5745068B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA974633A (en) | 1975-09-16 |
| IT967326B (it) | 1974-02-28 |
| FR2152751A1 (de) | 1973-04-27 |
| JPS4838692A (de) | 1973-06-07 |
| JPS5745068B2 (de) | 1982-09-25 |
| FR2152751B1 (de) | 1978-01-06 |
| DE2243524A1 (de) | 1973-03-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3985590A (en) | Process for forming heteroepitaxial structure | |
| US3935040A (en) | Process for forming monolithic semiconductor display | |
| GB1353954A (en) | Methods of producing gallium phosphide light emitting diodes | |
| US3629018A (en) | Process for the fabrication of light-emitting semiconductor diodes | |
| GB1186945A (en) | Improvements relating to Semiconductor Devices | |
| JPS55141769A (en) | Electric field light emitting element | |
| GB1173162A (en) | Injection-Luminescent Diodes | |
| FR1489613A (de) | ||
| GB1447723A (en) | Semiconductor devices | |
| GB1477524A (en) | Red light-emitting gallium phosphide device | |
| GB1448606A (en) | Semiconductor luminescence diodes | |
| GB1277138A (en) | High power avalanche diode and methods of making the same | |
| GB1467145A (en) | Method of forming a wafer of semiconductor material and the wafer so formed | |
| JPS5423391A (en) | Gallium-arsenic semiconductor element | |
| JPS5615032A (en) | Semiconductor device and manufacture thereof | |
| GB1526452A (en) | Electroluminescent diodes and a method of manufacturing same | |
| GB1271896A (en) | Semiconductor rectifying junction device | |
| JPS5591186A (en) | Light emitting diode display device | |
| KR790000518B1 (en) | Method of producing gallium phosphide redlight emission diode | |
| JPS6435968A (en) | Gallium arsenide/aluminum mixed crystal epitaxial wafer | |
| GB1267323A (en) | Injection type light emitting diode and method of making same | |
| UST979005I4 (en) | Light emitting diodes with back-side emission | |
| KR790000585B1 (en) | Gallium phosphide red-light emmision element | |
| GB1392955A (en) | Light emitting diode | |
| GB1500128A (en) | Light emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |