GB1350771A - Microelectronic devices - Google Patents
Microelectronic devicesInfo
- Publication number
- GB1350771A GB1350771A GB1350771DA GB1350771A GB 1350771 A GB1350771 A GB 1350771A GB 1350771D A GB1350771D A GB 1350771DA GB 1350771 A GB1350771 A GB 1350771A
- Authority
- GB
- United Kingdom
- Prior art keywords
- square
- realignment
- resist
- electron beam
- microelectronic devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/26—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
1350771 Photomask DEFENCE SECRETARY OF STATE FOR 19 April 1971 [22 Jan 1970] 3165/70 Heading G2X [Also in Division H1] A method of producing a mask for use in the production of such a micro-electronic device uses the electron beam of an electron microscope to change the nature of "resist" material deposited on a surface so that the resist material may be selectively etched in order that the substrate may be selectively processed, the resist material carrying a set of reference marks so that the beam may be accurately aligned throughout the process. Mechanical realignment of the electron beam may be effected every 1À5 mm square and electronic realignment every 100 p square.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB316570 | 1970-01-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1350771A true GB1350771A (en) | 1974-04-24 |
Family
ID=9753159
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1350771D Expired GB1350771A (en) | 1970-01-22 | 1970-01-22 | Microelectronic devices |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1350771A (en) |
-
1970
- 1970-01-22 GB GB1350771D patent/GB1350771A/en not_active Expired
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |