GB1332702A - Photomasks - Google Patents

Photomasks

Info

Publication number
GB1332702A
GB1332702A GB5436570A GB5436570A GB1332702A GB 1332702 A GB1332702 A GB 1332702A GB 5436570 A GB5436570 A GB 5436570A GB 5436570 A GB5436570 A GB 5436570A GB 1332702 A GB1332702 A GB 1332702A
Authority
GB
United Kingdom
Prior art keywords
parts
silicon
solution
deionized water
photomasks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5436570A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DIEM A R
Original Assignee
DIEM A R
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DIEM A R filed Critical DIEM A R
Publication of GB1332702A publication Critical patent/GB1332702A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/048—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using other optical storage elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/003—Apparatus or processes specially adapted for manufacturing resistors using lithography, e.g. photolithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Weting (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

1332702 Etching A R DIEM 16 Nov 1970 [13 April 1970] 54365/70 Heading B6J [Also in Divisions C7 and G2] In a method of making a silicon photomask, areas of silicon not covered with a photosensitive film are etched away in a solution comprising 1 part HF, 6 parts HNO 3 , 2 parts deionized water and 4 parts of a solution comprising 84À1 grams FeCl 3 6H 2 O in 100 c.c. deionized water.
GB5436570A 1970-04-13 1970-11-16 Photomasks Expired GB1332702A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2774470A 1970-04-13 1970-04-13

Publications (1)

Publication Number Publication Date
GB1332702A true GB1332702A (en) 1973-10-03

Family

ID=21839540

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5436570A Expired GB1332702A (en) 1970-04-13 1970-11-16 Photomasks

Country Status (8)

Country Link
US (1) US3721584A (en)
JP (1) JPS4948273B1 (en)
BE (1) BE768820A (en)
CA (1) CA962493A (en)
DE (1) DE2057929C3 (en)
FR (1) FR2123236B3 (en)
GB (1) GB1332702A (en)
NL (1) NL7103921A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4265991A (en) 1977-12-22 1981-05-05 Canon Kabushiki Kaisha Electrophotographic photosensitive member and process for production thereof
US4471694A (en) * 1980-09-18 1984-09-18 Canon Kabushiki Kaisha Printing process for transferring fixed image from master

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6076652A (en) 1971-04-16 2000-06-20 Texas Instruments Incorporated Assembly line system and apparatus controlling transfer of a workpiece
US4144684A (en) * 1974-06-14 1979-03-20 Pilkington Brothers Limited Glazing unit
GB1507465A (en) * 1974-06-14 1978-04-12 Pilkington Brothers Ltd Coating glass
JPS5513426B2 (en) * 1974-06-18 1980-04-09
JPS53136980A (en) * 1977-05-04 1978-11-29 Nippon Telegr & Teleph Corp <Ntt> Resistance value correction method for poly crystal silicon resistor
US4217393A (en) * 1978-07-24 1980-08-12 Rca Corporation Method of inducing differential etch rates in glow discharge produced amorphous silicon
US4262056A (en) * 1978-09-15 1981-04-14 The United States Of America As Represented By The Secretary Of The Navy Ion-implanted multilayer optical interference filter
DE3204054A1 (en) * 1981-02-23 1982-09-09 Intel Corp., Santa Clara, Calif. Integrated-circuit resistor and process for producing it
DE3401963A1 (en) * 1984-01-20 1985-07-25 Siemens AG, 1000 Berlin und 8000 München Method for producing photoresist structures having stepped flanks
JPS6195356A (en) * 1984-10-16 1986-05-14 Mitsubishi Electric Corp Photomask material
JPS61116358A (en) * 1984-11-09 1986-06-03 Mitsubishi Electric Corp Photomask material
JPS61173251A (en) * 1985-01-28 1986-08-04 Mitsubishi Electric Corp Production of photomask
US4897360A (en) * 1987-12-09 1990-01-30 Wisconsin Alumni Research Foundation Polysilicon thin film process
US5051326A (en) * 1989-05-26 1991-09-24 At&T Bell Laboratories X-Ray lithography mask and devices made therewith
US6673438B1 (en) 1994-05-03 2004-01-06 Cardinal Cg Company Transparent article having protective silicon nitride film
US5837562A (en) * 1995-07-07 1998-11-17 The Charles Stark Draper Laboratory, Inc. Process for bonding a shell to a substrate for packaging a semiconductor
US5930645A (en) * 1997-12-18 1999-07-27 Advanced Micro Devices, Inc. Shallow trench isolation formation with reduced polish stop thickness
US6582826B1 (en) * 1998-03-23 2003-06-24 Kabushiki Kaisha Ohara Glass-ceramics
FR2861853B1 (en) * 2003-10-30 2006-02-24 Soitec Silicon On Insulator SUBSTRATE WITH INDEX ADAPTATION
US20050183589A1 (en) * 2004-02-19 2005-08-25 Salmon Peter C. Imprinting tools and methods for printed circuit boards and assemblies
JP5225421B2 (en) 2010-05-18 2013-07-03 キヤノン株式会社 Electrophotographic apparatus and electrophotographic photosensitive member
US10162091B1 (en) * 2015-10-16 2018-12-25 Board Of Trustees Of The University Of Alabama, For And On Behalf Of The University Of Alabama In Huntsville Silicon film optical filtering systems and methods of fabrication

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4265991A (en) 1977-12-22 1981-05-05 Canon Kabushiki Kaisha Electrophotographic photosensitive member and process for production thereof
US4507375A (en) * 1977-12-22 1985-03-26 Canon Kabushiki Kaisha Electrophotographic photosensitive member and process for production thereof
US4471694A (en) * 1980-09-18 1984-09-18 Canon Kabushiki Kaisha Printing process for transferring fixed image from master

Also Published As

Publication number Publication date
CA962493A (en) 1975-02-11
DE2057929A1 (en) 1971-12-09
NL7103921A (en) 1971-10-15
US3721584A (en) 1973-03-20
FR2123236A7 (en) 1972-09-08
DE2057929B2 (en) 1974-11-07
BE768820A (en) 1971-11-03
DE2057929C3 (en) 1975-06-26
FR2123236B3 (en) 1973-08-10
JPS4948273B1 (en) 1974-12-20

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee