JPS4948273B1 - - Google Patents

Info

Publication number
JPS4948273B1
JPS4948273B1 JP45123161A JP12316170A JPS4948273B1 JP S4948273 B1 JPS4948273 B1 JP S4948273B1 JP 45123161 A JP45123161 A JP 45123161A JP 12316170 A JP12316170 A JP 12316170A JP S4948273 B1 JPS4948273 B1 JP S4948273B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45123161A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4948273B1 publication Critical patent/JPS4948273B1/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/28Interference filters
    • G02B5/285Interference filters comprising deposited thin solid films
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24Deposition of silicon only
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/048Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using other optical storage elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/003Apparatus or processes specially adapted for manufacturing resistors using lithography, e.g. photolithography
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314Inorganic layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222Capacitive arrangements or effects of, or between wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/26Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263Coating layer not in excess of 5 mils thick or equivalent

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Weting (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP45123161A 1970-04-13 1970-12-30 Pending JPS4948273B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2774470A 1970-04-13 1970-04-13

Publications (1)

Publication Number Publication Date
JPS4948273B1 true JPS4948273B1 (en) 1974-12-20

Family

ID=21839540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45123161A Pending JPS4948273B1 (en) 1970-04-13 1970-12-30

Country Status (8)

Country Link
US (1) US3721584A (en)
JP (1) JPS4948273B1 (en)
BE (1) BE768820A (en)
CA (1) CA962493A (en)
DE (1) DE2057929C3 (en)
FR (1) FR2123236B3 (en)
GB (1) GB1332702A (en)
NL (1) NL7103921A (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6076652A (en) 1971-04-16 2000-06-20 Texas Instruments Incorporated Assembly line system and apparatus controlling transfer of a workpiece
GB1507465A (en) * 1974-06-14 1978-04-12 Pilkington Brothers Ltd Coating glass
US4144684A (en) * 1974-06-14 1979-03-20 Pilkington Brothers Limited Glazing unit
JPS5513426B2 (en) * 1974-06-18 1980-04-09
JPS53136980A (en) * 1977-05-04 1978-11-29 Nippon Telegr & Teleph Corp <Ntt> Resistance value correction method for poly crystal silicon resistor
AU530905B2 (en) 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
US4217393A (en) * 1978-07-24 1980-08-12 Rca Corporation Method of inducing differential etch rates in glow discharge produced amorphous silicon
US4262056A (en) * 1978-09-15 1981-04-14 The United States Of America As Represented By The Secretary Of The Navy Ion-implanted multilayer optical interference filter
JPS5754959A (en) * 1980-09-18 1982-04-01 Canon Inc Printing method
DE3204054A1 (en) * 1981-02-23 1982-09-09 Intel Corp., Santa Clara, Calif. Integrated-circuit resistor and process for producing it
DE3401963A1 (en) * 1984-01-20 1985-07-25 Siemens AG, 1000 Berlin und 8000 München Method for producing photoresist structures having stepped flanks
JPS6195356A (en) * 1984-10-16 1986-05-14 Mitsubishi Electric Corp Photomask material
JPS61116358A (en) * 1984-11-09 1986-06-03 Mitsubishi Electric Corp Photomask material
JPS61173251A (en) * 1985-01-28 1986-08-04 Mitsubishi Electric Corp Production of photomask
US4897360A (en) * 1987-12-09 1990-01-30 Wisconsin Alumni Research Foundation Polysilicon thin film process
US5051326A (en) * 1989-05-26 1991-09-24 At&T Bell Laboratories X-Ray lithography mask and devices made therewith
US6673438B1 (en) * 1994-05-03 2004-01-06 Cardinal Cg Company Transparent article having protective silicon nitride film
US5837562A (en) * 1995-07-07 1998-11-17 The Charles Stark Draper Laboratory, Inc. Process for bonding a shell to a substrate for packaging a semiconductor
US5930645A (en) * 1997-12-18 1999-07-27 Advanced Micro Devices, Inc. Shallow trench isolation formation with reduced polish stop thickness
US6582826B1 (en) 1998-03-23 2003-06-24 Kabushiki Kaisha Ohara Glass-ceramics
FR2861853B1 (en) * 2003-10-30 2006-02-24 Soitec Silicon On Insulator SUBSTRATE WITH INDEX ADAPTATION
US20050183589A1 (en) * 2004-02-19 2005-08-25 Salmon Peter C. Imprinting tools and methods for printed circuit boards and assemblies
JP5225421B2 (en) * 2010-05-18 2013-07-03 キヤノン株式会社 Electrophotographic apparatus and electrophotographic photosensitive member
US10162091B1 (en) * 2015-10-16 2018-12-25 Board Of Trustees Of The University Of Alabama, For And On Behalf Of The University Of Alabama In Huntsville Silicon film optical filtering systems and methods of fabrication

Also Published As

Publication number Publication date
CA962493A (en) 1975-02-11
FR2123236B3 (en) 1973-08-10
BE768820A (en) 1971-11-03
NL7103921A (en) 1971-10-15
DE2057929B2 (en) 1974-11-07
FR2123236A7 (en) 1972-09-08
DE2057929C3 (en) 1975-06-26
US3721584A (en) 1973-03-20
GB1332702A (en) 1973-10-03
DE2057929A1 (en) 1971-12-09

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