GB1256438A - Improvements in or relating to non-crucible zone melting - Google Patents

Improvements in or relating to non-crucible zone melting

Info

Publication number
GB1256438A
GB1256438A GB02943/70A GB1294370A GB1256438A GB 1256438 A GB1256438 A GB 1256438A GB 02943/70 A GB02943/70 A GB 02943/70A GB 1294370 A GB1294370 A GB 1294370A GB 1256438 A GB1256438 A GB 1256438A
Authority
GB
United Kingdom
Prior art keywords
earthed
centre tap
coil
crystal rod
melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB02943/70A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1256438A publication Critical patent/GB1256438A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/06—Control, e.g. of temperature, of power
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • General Induction Heating (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1,256,438. Zone-melting. SIEMENS A.G. 18 March, 1970 [19 March, 1969], No. 12943/ 70. Heading B1S. In an apparatus for zone melting by means of induction heating the centre tap of the induction coil (one turn or a solenoid) is maintained at the same potential as the crystal rod (of, e.g. silicon or germanium) being treated so as to reduce the possibility of flashover. In the embodiment shown the centre tap 113 of the coil 107 is connected to the wall of the metal melting chamber, both this and the crystal support being earthed, the induction coil being powered by high-frequency generator 110 via capacitors 115. Other embodiments described have either an inductive or a capacitative symmetrising circuit with an earthed centre tap, (Figs. 2a, 2b, 2c and 3) or a centre tap of the coil coupling the heating circuit to the generator earthed (Fig. 2d), the crystal rod in each case being earthed. As an alternative to earthing in all cases the centre taps may be connected by a contact tongue to the crystal rod supports (Fig. 3).
GB02943/70A 1969-03-19 1970-03-18 Improvements in or relating to non-crucible zone melting Expired GB1256438A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691913881 DE1913881B2 (en) 1969-03-19 1969-03-19 Device for crucible-free zone melting

Publications (1)

Publication Number Publication Date
GB1256438A true GB1256438A (en) 1971-12-08

Family

ID=5728595

Family Applications (1)

Application Number Title Priority Date Filing Date
GB02943/70A Expired GB1256438A (en) 1969-03-19 1970-03-18 Improvements in or relating to non-crucible zone melting

Country Status (7)

Country Link
US (1) US3644151A (en)
CH (1) CH557199A (en)
DE (1) DE1913881B2 (en)
FR (1) FR2039037A5 (en)
GB (1) GB1256438A (en)
NL (1) NL6918529A (en)
SE (1) SE355957B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105916227A (en) * 2015-02-24 2016-08-31 高周波热錬株式会社 Heating device and heating coil

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2220519C3 (en) * 1972-04-26 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Process for crucible-free zone melting of semiconductor rods
JPS5382603A (en) * 1976-12-27 1978-07-21 Monsanto Co Zone refining apparatus for semiconductive material rod
US4220626A (en) * 1978-04-13 1980-09-02 Monsanto Company RF Induction heating circuits for float zone refining of semiconductor rods
DE3143146A1 (en) * 1981-10-30 1983-05-11 Siemens AG, 1000 Berlin und 8000 München INDUCTION HEATING COIL DESIGNED AS A FLAT COIL FOR POT-FREE ZONE MELTING
DE3226713A1 (en) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München INDUCTION HEATING COIL DESIGNED AS A FLAT COIL FOR POT-FREE ZONE MELTING
DE3229461A1 (en) * 1982-08-06 1984-02-09 Siemens AG, 1000 Berlin und 8000 München DEVICE FOR POT-FREE ZONE MELTING OF A SEMICONDUCTOR STICK, PARTICULARLY MADE OF SILICON
DE3836239A1 (en) * 1988-10-25 1990-04-26 Deutsche Forsch Luft Raumfahrt DEVICE FOR TANKLESS POSITIONING AND MELTING OF ELECTRICALLY CONDUCTIVE MATERIALS

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105916227A (en) * 2015-02-24 2016-08-31 高周波热錬株式会社 Heating device and heating coil

Also Published As

Publication number Publication date
DE1913881A1 (en) 1970-10-22
FR2039037A5 (en) 1971-01-08
NL6918529A (en) 1970-09-22
CH557199A (en) 1974-12-31
DE1913881B2 (en) 1970-10-22
US3644151A (en) 1972-02-22
SE355957B (en) 1973-05-14

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