GB1232126A - - Google Patents

Info

Publication number
GB1232126A
GB1232126A GB1232126DA GB1232126A GB 1232126 A GB1232126 A GB 1232126A GB 1232126D A GB1232126D A GB 1232126DA GB 1232126 A GB1232126 A GB 1232126A
Authority
GB
United Kingdom
Prior art keywords
layer
platinum
metal
providing
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1232126A publication Critical patent/GB1232126A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

1,232,126. Semi-conductor devices. RCA CORPORATION. 16 Sept., 1969 [23 Dec., 1968], No. 45588/69. Heading H1K. A method of providing electrodes on a semiconductor wafer 10 comprises providing a first, metal, layer 16 which contacts the wafer surface where required through apertures in an insulating surface layer 12, then providing a second, platinum, layer 36 over the first layer, and coating this second layer with a third, metal, layer, providing apertures in the third layer by masking and etching to expose portions of the platinum layer and etching the exposed platinum away using an etchant which does not attack the metals of the first and third layers. The third layer is then removed over the remaining platinum portions 36 by etching, the first layer being protected meanwhile by an insulating layer 40, and a good conducting metal 20 such as gold, silver or copper is electrolytically plated on these remaining portions 36 to complete the electrodes. Finally the insulating layer 40 is removed and parts of the metal layer 16 are etched away to separate the electrodes from one another. The metals used for the first and third layers may be titanium, tantalum, or rhodium, and the semi-conductor is silicon or gallium arsenide. The compositions of the chemical etchants used in the process are given.
GB1232126D 1968-12-23 1969-09-16 Expired GB1232126A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78621868A 1968-12-23 1968-12-23

Publications (1)

Publication Number Publication Date
GB1232126A true GB1232126A (en) 1971-05-19

Family

ID=25137939

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1232126D Expired GB1232126A (en) 1968-12-23 1969-09-16

Country Status (4)

Country Link
JP (1) JPS4842023B1 (en)
DE (1) DE1947026B2 (en)
FR (1) FR2026831A1 (en)
GB (1) GB1232126A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700569A (en) * 1971-09-10 1972-10-24 Bell Telephone Labor Inc Method of metallizing devices
JPS5174735U (en) * 1974-12-06 1976-06-11
CH648692A5 (en) * 1979-09-05 1985-03-29 Bbc Brown Boveri & Cie Contact arrangement on a semiconductor component
EP0312965B1 (en) * 1987-10-23 1992-12-30 Siemens Aktiengesellschaft Method of producing a planar self-aligned heterojunction bipolar transistor

Also Published As

Publication number Publication date
FR2026831A1 (en) 1970-09-25
JPS4842023B1 (en) 1973-12-10
DE1947026A1 (en) 1971-03-04
DE1947026B2 (en) 1973-12-20

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees