GB1231993A - - Google Patents
Info
- Publication number
- GB1231993A GB1231993A GB1231993DA GB1231993A GB 1231993 A GB1231993 A GB 1231993A GB 1231993D A GB1231993D A GB 1231993DA GB 1231993 A GB1231993 A GB 1231993A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- heater
- silicon
- inert gas
- flowing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000011261 inert gas Substances 0.000 abstract 2
- 229910000077 silane Inorganic materials 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000001307 helium Substances 0.000 abstract 1
- 229910052734 helium Inorganic materials 0.000 abstract 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052754 neon Inorganic materials 0.000 abstract 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- 238000011144 upstream manufacturing Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04D—ROOF COVERINGS; SKY-LIGHTS; GUTTERS; ROOF-WORKING TOOLS
- E04D13/00—Special arrangements or devices in connection with roof coverings; Protection against birds; Roof drainage ; Sky-lights
- E04D13/15—Trimming strips; Edge strips; Fascias; Expansion joints for roofs
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Civil Engineering (AREA)
- Structural Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
1,231,993. Depositing silicon epitaxially. RCA CORP. 7 Oct., 1969 [13 Jan., 1969], No. 49246/69. Heading C1A. [Also in Division C7] An epitaxial silicon layer is deposited on a substrate 20 which may be of silicon, positioned on a heating element 18, by flowing silane and an inert gas, e.g. argon, helium, neon or nitrogen over the heated substrate. The substrate and heater 18 are so arranged, e.g. as shown against a wall 19, that their upstream surfaces are shielded from the gas. The heater may be a resistance heater or a silicon carbide-coated graphite block heated by a R.F. coil 17. The reaction chamber may be surrounded by a cooling chamber 16, and it may be first purged by flowing hydrogen therethrough. In Example 2, after treatment of the substrate in a flow of hydrogen at 1200‹ C., the deposition is conducted at 800‹ C. with a flow rate of 20 1. )min. and a silane concentration of 0À01-0À2 volume per cent in an inert gas.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US79056669A | 1969-01-13 | 1969-01-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1231993A true GB1231993A (en) | 1971-05-12 |
Family
ID=25151089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1231993D Expired GB1231993A (en) | 1969-01-13 | 1969-10-07 |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE740149A (en) |
| DE (1) | DE1951290A1 (en) |
| FR (1) | FR2028172A1 (en) |
| GB (1) | GB1231993A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7361222B2 (en) | 2003-04-24 | 2008-04-22 | Norstel Ab | Device and method for producing single crystals by vapor deposition |
-
1969
- 1969-09-12 FR FR6931168A patent/FR2028172A1/fr not_active Withdrawn
- 1969-10-07 GB GB1231993D patent/GB1231993A/en not_active Expired
- 1969-10-10 BE BE740149D patent/BE740149A/xx unknown
- 1969-10-10 DE DE19691951290 patent/DE1951290A1/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7361222B2 (en) | 2003-04-24 | 2008-04-22 | Norstel Ab | Device and method for producing single crystals by vapor deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2028172A1 (en) | 1970-10-09 |
| BE740149A (en) | 1970-03-16 |
| DE1951290A1 (en) | 1970-10-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |