GB1212379A - Improvements in or relating to methods of making semiconductor devices - Google Patents
Improvements in or relating to methods of making semiconductor devicesInfo
- Publication number
- GB1212379A GB1212379A GB5755167A GB5755167A GB1212379A GB 1212379 A GB1212379 A GB 1212379A GB 5755167 A GB5755167 A GB 5755167A GB 5755167 A GB5755167 A GB 5755167A GB 1212379 A GB1212379 A GB 1212379A
- Authority
- GB
- United Kingdom
- Prior art keywords
- plane
- etch rate
- mask
- etching
- etchant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000005530 etching Methods 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 abstract 4
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 abstract 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 abstract 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 abstract 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 150000001298 alcohols Chemical class 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052792 caesium Inorganic materials 0.000 abstract 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 abstract 1
- 239000003153 chemical reaction reagent Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- -1 hydroxide ions Chemical class 0.000 abstract 1
- 150000004679 hydroxides Chemical class 0.000 abstract 1
- 229910052744 lithium Inorganic materials 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910052700 potassium Inorganic materials 0.000 abstract 1
- 239000011591 potassium Substances 0.000 abstract 1
- 230000002028 premature Effects 0.000 abstract 1
- 229910052701 rubidium Inorganic materials 0.000 abstract 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052708 sodium Inorganic materials 0.000 abstract 1
- 239000011734 sodium Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/40—Alkaline compositions for etching other metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
Abstract
1,212,379. Etching. WESTERN ELECTRIC CO. Inc. 19 Dec., 1967 [20 Dec., 1966], No. 57551/67. Heading B6J. [Also in Division H1] A method of etching a monocrystalline slice of silicon semi-conductor material having at least three low-order crystallographic planes and having a major face in one of these planes includes the steps of forming an etch-resistant mask on the face with its edges parallel to the lines of intersection of the one plane and one of the other planes and exposing the face to an etchant which has a relatively high etch rate on the one plane and a relatively low etch rate on the other planes. Undercutting of the mask is thereby prevented so that the method is particularly suitable for etching isolating grooves between the elements in an integrated circuit. In a preferred embodiment a silicon oxide mask 43 is formed on the side of a silicon slice 44 opposite the elements 45 and an etchant is applied having a high etch rate on the (100) plane, a very low etch rate on the (111) plane 49, and an intermediate etch rate on the (110) plane. The selection of an intermediate etch rate rather than a low etch rate on the (110) plane prevents the formation of pyramids (Fig. 10, not shown) which can cause premature termination of the etching process. Suitable etchants are those containing the hydroxides of sodium, potassium, caesium, lithium or rubidium, to which may be added aluminium (to reduce the rate of attack on silicon oxide) or low-order alcohols such as methanol, ethanol or n-propanol (to vary the etch rate on the (110) plane). Alternatively, etchants containing organic reagents capable of producing free hydroxide ions may be used. Preferably the etchant comprises a solution containing 15 gms. potassium hydroxide, 50 ml. water and 15 ml. n-propanol which has an etch rate on the (110) plane of three- or four-tenths of its etch rate on the (100) plane. Etching ceases when the silicon oxide layer 46 is reached. The use of an etchant with an intermediate etch rate on the (110) plane to avoid the formation of pyramids also causes undercutting at convex corners ,of the mask. This effect is counteracted by forming the mask at these corners with compensating extensions (Figs. 12 and 14, not shown). The aperture in the mask is formed by photoresist and etching techniques, the crystallographic orientation of the semiconductor having been determined previously by goniometric methods. Silicon nitride may be used as the masking material instead of silicon oxide.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US60329266A | 1966-12-20 | 1966-12-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1212379A true GB1212379A (en) | 1970-11-18 |
Family
ID=24414811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5755167A Expired GB1212379A (en) | 1966-12-20 | 1967-12-19 | Improvements in or relating to methods of making semiconductor devices |
Country Status (7)
| Country | Link |
|---|---|
| BE (1) | BE708163A (en) |
| DE (1) | DE1621532B2 (en) |
| FR (1) | FR1548079A (en) |
| GB (1) | GB1212379A (en) |
| MY (1) | MY7300447A (en) |
| NL (1) | NL144778B (en) |
| SE (1) | SE342526B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2264588A (en) * | 1992-02-26 | 1993-09-01 | Philips Electronics Uk Ltd | Manufacture of etched substrates such as infrared detectors |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1288278A (en) * | 1968-12-31 | 1972-09-06 | ||
| US3844858A (en) * | 1968-12-31 | 1974-10-29 | Texas Instruments Inc | Process for controlling the thickness of a thin layer of semiconductor material and semiconductor substrate |
| US3579057A (en) * | 1969-08-18 | 1971-05-18 | Rca Corp | Method of making a semiconductor article and the article produced thereby |
| CA957782A (en) * | 1970-01-26 | 1974-11-12 | Theodore Kamprath | Capacitor structure for integrated circuits |
| DE2106540A1 (en) * | 1970-02-13 | 1971-08-19 | Texas Instruments Inc | Semiconductor circuits and processes for their manufacture |
| US4668333A (en) * | 1985-12-13 | 1987-05-26 | Xerox Corporation | Image sensor array for assembly with like arrays to form a longer array |
| EP0296348B1 (en) * | 1987-05-27 | 1993-03-31 | Siemens Aktiengesellschaft | Process for etching holes or grooves in n-type silicium |
| US5508231A (en) * | 1994-03-07 | 1996-04-16 | National Semiconductor Corporation | Apparatus and method for achieving mechanical and thermal isolation of portions of integrated monolithic circuits |
-
1967
- 1967-12-01 NL NL6716390A patent/NL144778B/en not_active IP Right Cessation
- 1967-12-18 BE BE708163D patent/BE708163A/xx not_active IP Right Cessation
- 1967-12-19 SE SE1741067A patent/SE342526B/xx unknown
- 1967-12-19 DE DE19671621532 patent/DE1621532B2/en not_active Withdrawn
- 1967-12-19 GB GB5755167A patent/GB1212379A/en not_active Expired
- 1967-12-20 FR FR1548079D patent/FR1548079A/fr not_active Expired
-
1973
- 1973-12-30 MY MY7300447A patent/MY7300447A/en unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2264588A (en) * | 1992-02-26 | 1993-09-01 | Philips Electronics Uk Ltd | Manufacture of etched substrates such as infrared detectors |
| GB2264588B (en) * | 1992-02-26 | 1995-12-13 | Philips Electronics Uk Ltd | Manufacture of etched substrates such as infared detectors |
| US5647954A (en) * | 1992-02-26 | 1997-07-15 | Gec Marconi Limited | Manufacture of etched substrates such as infrared detectors |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1621532A1 (en) | 1970-10-22 |
| BE708163A (en) | 1968-05-02 |
| DE1621532B2 (en) | 1971-10-07 |
| NL6716390A (en) | 1968-06-21 |
| SE342526B (en) | 1972-02-07 |
| MY7300447A (en) | 1973-12-31 |
| NL144778B (en) | 1975-01-15 |
| FR1548079A (en) | 1968-11-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |