GB1154579A - Process for the Preparation of a Germanium-Silicon Alloy and Alloys Produced Thereby. - Google Patents
Process for the Preparation of a Germanium-Silicon Alloy and Alloys Produced Thereby.Info
- Publication number
- GB1154579A GB1154579A GB31551/66A GB3155166A GB1154579A GB 1154579 A GB1154579 A GB 1154579A GB 31551/66 A GB31551/66 A GB 31551/66A GB 3155166 A GB3155166 A GB 3155166A GB 1154579 A GB1154579 A GB 1154579A
- Authority
- GB
- United Kingdom
- Prior art keywords
- solvent metal
- melting
- solvent
- crystals
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/12—Salt solvents, e.g. flux growth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
Abstract
1,154,579. Thermoelectric materials. COMMISSARIAT A L'ENERGIE ATOMIQUE. 13 July, 1966 [13 July, 1965], No. 31551/66. Heading H1K. [Also in Division C7] Germanium-silicon alloys for use in thermoelectric conversion of energy are prepared by melting a mixture of Ge and Si powders together in this presence of a solvent metal at a temperature of not more than 1450 C., keeping the melt at this temperature for sufficient time to ensure homogenization and then cooling it to co-precipitate the Ge and Si and to allow crystals to grow followed by further cooling to ambient temperatures and separation of the crystals and solvent metal. Solvent metals mentioned are As, Sb, Ga, In, Bi, Sn, Pb, Tl, Ag, Au, Zn, Cd and Al. Traces of the solvent metal remaining in the alloy act as dopants and determine its conductivity type. The melting may be carried out under pressure if the solvent metal is too volatile. The solvent metal may be removed by vacuum or chemical treatment or by filtration of the solid crystals from the molten solvent metal. The final alloy may be heated to its solidus temperature in an atmosphere of SiCl 4 and GeCl 4 to obtain slugs of suitable size for thermoelectric use. The melting may preferably be carried out in a crucible of vitreous carbon, beryllia or zinc silicate.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR24590A FR1458238A (en) | 1965-07-13 | 1965-07-13 | Germanium-silicon alloy preparation process |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1154579A true GB1154579A (en) | 1969-06-11 |
Family
ID=8584464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB31551/66A Expired GB1154579A (en) | 1965-07-13 | 1966-07-13 | Process for the Preparation of a Germanium-Silicon Alloy and Alloys Produced Thereby. |
Country Status (6)
Country | Link |
---|---|
BE (1) | BE683847A (en) |
CH (1) | CH459583A (en) |
ES (1) | ES329013A1 (en) |
FR (1) | FR1458238A (en) |
GB (1) | GB1154579A (en) |
LU (1) | LU51539A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0429019A1 (en) * | 1989-11-20 | 1991-05-29 | Nkk Corporation | Method for producing a high reactive alloy |
-
1965
- 1965-07-13 FR FR24590A patent/FR1458238A/en not_active Expired
-
1966
- 1966-07-08 BE BE683847D patent/BE683847A/xx unknown
- 1966-07-11 CH CH1002866A patent/CH459583A/en unknown
- 1966-07-12 ES ES329013A patent/ES329013A1/en not_active Expired
- 1966-07-12 LU LU51539A patent/LU51539A1/xx unknown
- 1966-07-13 GB GB31551/66A patent/GB1154579A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR1458238A (en) | 1966-03-04 |
LU51539A1 (en) | 1966-09-12 |
BE683847A (en) | 1966-12-16 |
CH459583A (en) | 1968-07-15 |
ES329013A1 (en) | 1968-03-16 |
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