GB1029804A - A process for producing a substantially monocrystalline rod of semiconductor material - Google Patents
A process for producing a substantially monocrystalline rod of semiconductor materialInfo
- Publication number
- GB1029804A GB1029804A GB45491/63A GB4549163A GB1029804A GB 1029804 A GB1029804 A GB 1029804A GB 45491/63 A GB45491/63 A GB 45491/63A GB 4549163 A GB4549163 A GB 4549163A GB 1029804 A GB1029804 A GB 1029804A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rod
- induction coil
- molten
- melt
- pulled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/906—Special atmosphere other than vacuum or inert
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0082820 | 1962-12-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1029804A true GB1029804A (en) | 1966-05-18 |
Family
ID=7510626
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB45491/63A Expired GB1029804A (en) | 1962-12-12 | 1963-11-18 | A process for producing a substantially monocrystalline rod of semiconductor material |
Country Status (6)
Country | Link |
---|---|
US (1) | US3351433A (de) |
JP (1) | JPS5021431B1 (de) |
BE (1) | BE641090A (de) |
CH (1) | CH420072A (de) |
DE (1) | DE1444530B2 (de) |
GB (1) | GB1029804A (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4721688A (en) * | 1986-09-18 | 1988-01-26 | Mobil Solar Energy Corporation | Method of growing crystals |
RU182737U1 (ru) * | 2016-12-29 | 2018-08-29 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Северо-Кавказский горно-металлургический институт (государственный технологический университет)" (СКГМИ (ГТУ) | Устройство для получения высокочистого монокристалла зонной плавкой |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1519902C3 (de) * | 1966-09-24 | 1975-07-10 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes |
GB1179545A (en) * | 1968-01-16 | 1970-01-28 | Siemens Ag | Apparatus for Melting a Rod of Crystalline Material Zone-by-Zone |
US3660062A (en) * | 1968-02-29 | 1972-05-02 | Siemens Ag | Method for crucible-free floating zone melting a crystalline rod, especially of semi-crystalline material |
JPS535867B2 (de) * | 1973-03-08 | 1978-03-02 | ||
US3977934A (en) * | 1975-01-02 | 1976-08-31 | Motorola, Inc. | Silicon manufacture |
US3996094A (en) * | 1975-01-02 | 1976-12-07 | Motorola, Inc. | Silicon manufacture |
GB1475261A (en) * | 1975-04-02 | 1977-06-01 | Nat Res Dev | Siliceous materials |
US4784715A (en) * | 1975-07-09 | 1988-11-15 | Milton Stoll | Methods and apparatus for producing coherent or monolithic elements |
DE69213059T2 (de) * | 1991-03-22 | 1997-04-10 | Shinetsu Handotai Kk | Verfahren zum Züchten eines einkristallinen Siliziumstabes |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB775817A (en) * | 1954-03-09 | 1957-05-29 | Siemens Ag | Improvements in or relating to processes and apparatus for drawing crystalline bodies , such as semi-conductor bodies |
DE1017795B (de) * | 1954-05-25 | 1957-10-17 | Siemens Ag | Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen |
US2743199A (en) * | 1955-03-30 | 1956-04-24 | Westinghouse Electric Corp | Process of zone refining an elongated body of metal |
FR1235341A (fr) * | 1958-03-05 | 1960-07-08 | Siemens Ag | Procédé et appareil de fabrication continue de tiges mono-cristallines minces |
US3036892A (en) * | 1958-03-05 | 1962-05-29 | Siemens Ag | Production of hyper-pure monocrystal-line rods in continuous operation |
NL112832C (de) * | 1959-05-08 | |||
NL108958C (de) * | 1959-05-29 | |||
GB911360A (en) * | 1959-10-16 | 1962-11-28 | Westinghouse Electric Corp | Process for growing crystals |
US2992311A (en) * | 1960-09-28 | 1961-07-11 | Siemens Ag | Method and apparatus for floatingzone melting of semiconductor rods |
SE347579B (de) * | 1970-11-27 | 1972-08-07 | Aga Ab |
-
1962
- 1962-12-12 DE DE19621444530 patent/DE1444530B2/de not_active Withdrawn
-
1963
- 1963-08-19 CH CH1020763A patent/CH420072A/de unknown
- 1963-11-18 GB GB45491/63A patent/GB1029804A/en not_active Expired
- 1963-12-11 BE BE641090A patent/BE641090A/xx unknown
- 1963-12-12 JP JP38067044A patent/JPS5021431B1/ja active Pending
-
1966
- 1966-07-06 US US563301A patent/US3351433A/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4721688A (en) * | 1986-09-18 | 1988-01-26 | Mobil Solar Energy Corporation | Method of growing crystals |
RU182737U1 (ru) * | 2016-12-29 | 2018-08-29 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Северо-Кавказский горно-металлургический институт (государственный технологический университет)" (СКГМИ (ГТУ) | Устройство для получения высокочистого монокристалла зонной плавкой |
Also Published As
Publication number | Publication date |
---|---|
US3351433A (en) | 1967-11-07 |
BE641090A (de) | 1964-06-11 |
DE1444530A1 (de) | 1969-04-24 |
DE1444530B2 (de) | 1970-10-01 |
CH420072A (de) | 1966-09-15 |
JPS5021431B1 (de) | 1975-07-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB908951A (en) | Production of semiconductors and the like | |
GB590458A (en) | Improvements in or relating to the treatment of silicon | |
GB1029804A (en) | A process for producing a substantially monocrystalline rod of semiconductor material | |
GB1102989A (en) | Method and apparatus for producing crystalline semiconductor ribbon | |
GB827466A (en) | Improvements in or relating to methods of and apparatus for manufacturing single crystals | |
GB838770A (en) | Improvements in method of growing semiconductor crystals | |
US3278274A (en) | Method of pulling monocrystalline silicon carbide | |
GB916390A (en) | Method of drawing a semi-conductor rod from a melt | |
GB1222465A (en) | Improvements in or relating to apparatus for the drawing of monocrystalline semiconductor rods | |
GB1074248A (en) | High resistivity gallium arsenide and process of making same | |
GB983004A (en) | Improvements in and relating to methods of thermal treatment of semiconductor material | |
US3135585A (en) | Method of growing dislocation-free semiconductor crystals | |
GB1059960A (en) | The production of semi-conductor rods | |
GB1065187A (en) | A method of producing a rod of semi-conductor material | |
GB1075706A (en) | Production of dislocation-free single crystals of semiconductor material | |
GB906485A (en) | Improvements in the production of mono-crystalline semiconductor material | |
GB1045664A (en) | A process for melting a rod of polycrystalline material zone-by-zone | |
GB1375132A (de) | ||
GB1006034A (en) | A method of producing a rod of semi-conductor material | |
GB930432A (en) | Improvements in or relating to methods of making bodies of semi-conductor material | |
US3929556A (en) | Nucleating growth of lead-tin-telluride single crystal with an oriented barium fluoride substrate | |
US3563810A (en) | Method for reducing the cross section of semiconductor rods by molten-zone stretching | |
GB894739A (en) | Improvements in or relating to methods for the treatment of meltable material in rod-shaped form by zone-melting | |
GB1045526A (en) | A method of zone-by-zone melting a rod of semiconductor material | |
GB911360A (en) | Process for growing crystals |