GB1029804A - A process for producing a substantially monocrystalline rod of semiconductor material - Google Patents

A process for producing a substantially monocrystalline rod of semiconductor material

Info

Publication number
GB1029804A
GB1029804A GB45491/63A GB4549163A GB1029804A GB 1029804 A GB1029804 A GB 1029804A GB 45491/63 A GB45491/63 A GB 45491/63A GB 4549163 A GB4549163 A GB 4549163A GB 1029804 A GB1029804 A GB 1029804A
Authority
GB
United Kingdom
Prior art keywords
rod
induction coil
molten
melt
pulled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB45491/63A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1029804A publication Critical patent/GB1029804A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB45491/63A 1962-12-12 1963-11-18 A process for producing a substantially monocrystalline rod of semiconductor material Expired GB1029804A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0082820 1962-12-12

Publications (1)

Publication Number Publication Date
GB1029804A true GB1029804A (en) 1966-05-18

Family

ID=7510626

Family Applications (1)

Application Number Title Priority Date Filing Date
GB45491/63A Expired GB1029804A (en) 1962-12-12 1963-11-18 A process for producing a substantially monocrystalline rod of semiconductor material

Country Status (6)

Country Link
US (1) US3351433A (de)
JP (1) JPS5021431B1 (de)
BE (1) BE641090A (de)
CH (1) CH420072A (de)
DE (1) DE1444530B2 (de)
GB (1) GB1029804A (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4721688A (en) * 1986-09-18 1988-01-26 Mobil Solar Energy Corporation Method of growing crystals
RU182737U1 (ru) * 2016-12-29 2018-08-29 Федеральное государственное бюджетное образовательное учреждение высшего образования "Северо-Кавказский горно-металлургический институт (государственный технологический университет)" (СКГМИ (ГТУ) Устройство для получения высокочистого монокристалла зонной плавкой

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1519902C3 (de) * 1966-09-24 1975-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes
GB1179545A (en) * 1968-01-16 1970-01-28 Siemens Ag Apparatus for Melting a Rod of Crystalline Material Zone-by-Zone
US3660062A (en) * 1968-02-29 1972-05-02 Siemens Ag Method for crucible-free floating zone melting a crystalline rod, especially of semi-crystalline material
JPS535867B2 (de) * 1973-03-08 1978-03-02
US3977934A (en) * 1975-01-02 1976-08-31 Motorola, Inc. Silicon manufacture
US3996094A (en) * 1975-01-02 1976-12-07 Motorola, Inc. Silicon manufacture
GB1475261A (en) * 1975-04-02 1977-06-01 Nat Res Dev Siliceous materials
US4784715A (en) * 1975-07-09 1988-11-15 Milton Stoll Methods and apparatus for producing coherent or monolithic elements
DE69213059T2 (de) * 1991-03-22 1997-04-10 Shinetsu Handotai Kk Verfahren zum Züchten eines einkristallinen Siliziumstabes

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB775817A (en) * 1954-03-09 1957-05-29 Siemens Ag Improvements in or relating to processes and apparatus for drawing crystalline bodies , such as semi-conductor bodies
DE1017795B (de) * 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen
US2743199A (en) * 1955-03-30 1956-04-24 Westinghouse Electric Corp Process of zone refining an elongated body of metal
FR1235341A (fr) * 1958-03-05 1960-07-08 Siemens Ag Procédé et appareil de fabrication continue de tiges mono-cristallines minces
US3036892A (en) * 1958-03-05 1962-05-29 Siemens Ag Production of hyper-pure monocrystal-line rods in continuous operation
NL112832C (de) * 1959-05-08
NL108958C (de) * 1959-05-29
GB911360A (en) * 1959-10-16 1962-11-28 Westinghouse Electric Corp Process for growing crystals
US2992311A (en) * 1960-09-28 1961-07-11 Siemens Ag Method and apparatus for floatingzone melting of semiconductor rods
SE347579B (de) * 1970-11-27 1972-08-07 Aga Ab

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4721688A (en) * 1986-09-18 1988-01-26 Mobil Solar Energy Corporation Method of growing crystals
RU182737U1 (ru) * 2016-12-29 2018-08-29 Федеральное государственное бюджетное образовательное учреждение высшего образования "Северо-Кавказский горно-металлургический институт (государственный технологический университет)" (СКГМИ (ГТУ) Устройство для получения высокочистого монокристалла зонной плавкой

Also Published As

Publication number Publication date
US3351433A (en) 1967-11-07
BE641090A (de) 1964-06-11
DE1444530A1 (de) 1969-04-24
DE1444530B2 (de) 1970-10-01
CH420072A (de) 1966-09-15
JPS5021431B1 (de) 1975-07-23

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