GB1075706A - Production of dislocation-free single crystals of semiconductor material - Google Patents

Production of dislocation-free single crystals of semiconductor material

Info

Publication number
GB1075706A
GB1075706A GB41589/64A GB4158964A GB1075706A GB 1075706 A GB1075706 A GB 1075706A GB 41589/64 A GB41589/64 A GB 41589/64A GB 4158964 A GB4158964 A GB 4158964A GB 1075706 A GB1075706 A GB 1075706A
Authority
GB
United Kingdom
Prior art keywords
tube
rate
zone
rod
oct
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB41589/64A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US316347A external-priority patent/US3275417A/en
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1075706A publication Critical patent/GB1075706A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1,075,706. Zone-melting. TEXAS INSTRUMENTS Inc. Oct. 12, 1964 [Oct. 15, 1963], No. 41589/64. Heading B1S. A molten zone 16 is passed downwards through a rod 11 of silicon, supported in a non-conducting tube 60 containing an inert atmosphere, by means of a single turn induction coil 13 and a water cooled single turn shorted focusing coil 72 surrounding tube 60. Focusing coil 72 is in the form of a hollow truncated copper cone having a central bore. A thin rotary seed 10 is lowered into contact with the initially melted upper end of rode 16 and is then withdrawn at an initial rapid rate to produce a neck 14 followed by a dcreasing rate to produce a conical portion 15. Withdrawal is then continued at a uniform rate for the main process of zone melting. Rod 11 may be preheated by playing a hydrogen flame from a torch 77 on tube 60. The inert atmosphere in tube 60 may be of argon, helium, neon, or hydrogen. The molten zone may be passed at a rate of 150 mm/hr. The seed may be rotated at 2-20 rpm. The rod may have a diameter of 2-3 cm.
GB41589/64A 1963-10-15 1964-10-12 Production of dislocation-free single crystals of semiconductor material Expired GB1075706A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US316347A US3275417A (en) 1963-10-15 1963-10-15 Production of dislocation-free silicon single crystals
US493955A US3397042A (en) 1963-10-15 1965-08-27 Production of dislocation-free silicon single crystals

Publications (1)

Publication Number Publication Date
GB1075706A true GB1075706A (en) 1967-07-12

Family

ID=26980387

Family Applications (1)

Application Number Title Priority Date Filing Date
GB41589/64A Expired GB1075706A (en) 1963-10-15 1964-10-12 Production of dislocation-free single crystals of semiconductor material

Country Status (6)

Country Link
US (1) US3397042A (en)
JP (1) JPS4817986B1 (en)
DE (1) DE1519912C2 (en)
GB (1) GB1075706A (en)
MY (1) MY6900259A (en)
NL (1) NL6411697A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1619994B2 (en) * 1967-03-09 1976-07-15 Siemens AG, 1000 Berlin und 8000 München PROCESS FOR GROWING A ROD-SHAPED, DISPLACEMENT-FREE SINGLE CRYSTAL OF SILICON BY CRUCIBLE-FREE ZONE MELTING
US4197157A (en) * 1975-03-19 1980-04-08 Arthur D. Little, Inc. Method for forming refractory tubing
JPS52107183A (en) * 1976-03-06 1977-09-08 Toshitaka Okamoto Electric stand shade
JPS5374781A (en) * 1976-12-16 1978-07-03 Imagawa Yasuhito Foldable lamp shade
US4045181A (en) * 1976-12-27 1977-08-30 Monsanto Company Apparatus for zone refining
JPS546383A (en) * 1977-06-16 1979-01-18 Yasuhito Imagawa Foldable lamp shade
DE3421538A1 (en) * 1984-06-08 1985-12-12 ATOMIKA Technische Physik GmbH, 8000 München VACUUM EVAPORATION DEVICE
DE102014226419A1 (en) * 2014-12-18 2016-06-23 Siltronic Ag A method of growing a single crystal by crystallizing the single crystal from a flow zone

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA674121A (en) * 1963-11-12 Siemens-Schuckertwerke Aktiengesellschaft Method and apparatus for producing a strip of hyperpure semiconductor material
US2962363A (en) * 1957-07-09 1960-11-29 Pacific Semiconductors Inc Crystal pulling apparatus and method
US3036892A (en) * 1958-03-05 1962-05-29 Siemens Ag Production of hyper-pure monocrystal-line rods in continuous operation
US2981687A (en) * 1958-04-03 1961-04-25 British Thomson Houston Co Ltd Production of mono-crystal semiconductor bodies
DE1153908B (en) * 1958-04-22 1963-09-05 Siemens Ag Method and device for crucible-free zone melting with changing the spacing of the rod ends
US2905798A (en) * 1958-09-15 1959-09-22 Lindberg Eng Co Induction heating apparatus
NL253526A (en) * 1959-08-14
NL255530A (en) * 1959-09-11
US3135585A (en) * 1960-03-01 1964-06-02 Gen Electric Method of growing dislocation-free semiconductor crystals
FR1282910A (en) * 1960-03-01 1962-01-27 Thomson Houston Comp Francaise Method of growth without dislocation of semiconductor crystals
NL269311A (en) * 1960-09-20
GB926487A (en) * 1960-11-25 1963-05-22 Dorman & Smith Ltd Improvements in and relating to electrical fuse assemblies
NL274321A (en) * 1961-02-07

Also Published As

Publication number Publication date
JPS4817986B1 (en) 1973-06-02
NL6411697A (en) 1965-04-20
US3397042A (en) 1968-08-13
DE1519912B1 (en) 1970-06-18
DE1519912C2 (en) 1974-10-03
MY6900259A (en) 1969-12-31

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