GB1075706A - Production of dislocation-free single crystals of semiconductor material - Google Patents
Production of dislocation-free single crystals of semiconductor materialInfo
- Publication number
- GB1075706A GB1075706A GB41589/64A GB4158964A GB1075706A GB 1075706 A GB1075706 A GB 1075706A GB 41589/64 A GB41589/64 A GB 41589/64A GB 4158964 A GB4158964 A GB 4158964A GB 1075706 A GB1075706 A GB 1075706A
- Authority
- GB
- United Kingdom
- Prior art keywords
- tube
- rate
- zone
- rod
- oct
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
1,075,706. Zone-melting. TEXAS INSTRUMENTS Inc. Oct. 12, 1964 [Oct. 15, 1963], No. 41589/64. Heading B1S. A molten zone 16 is passed downwards through a rod 11 of silicon, supported in a non-conducting tube 60 containing an inert atmosphere, by means of a single turn induction coil 13 and a water cooled single turn shorted focusing coil 72 surrounding tube 60. Focusing coil 72 is in the form of a hollow truncated copper cone having a central bore. A thin rotary seed 10 is lowered into contact with the initially melted upper end of rode 16 and is then withdrawn at an initial rapid rate to produce a neck 14 followed by a dcreasing rate to produce a conical portion 15. Withdrawal is then continued at a uniform rate for the main process of zone melting. Rod 11 may be preheated by playing a hydrogen flame from a torch 77 on tube 60. The inert atmosphere in tube 60 may be of argon, helium, neon, or hydrogen. The molten zone may be passed at a rate of 150 mm/hr. The seed may be rotated at 2-20 rpm. The rod may have a diameter of 2-3 cm.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US316347A US3275417A (en) | 1963-10-15 | 1963-10-15 | Production of dislocation-free silicon single crystals |
US493955A US3397042A (en) | 1963-10-15 | 1965-08-27 | Production of dislocation-free silicon single crystals |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1075706A true GB1075706A (en) | 1967-07-12 |
Family
ID=26980387
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB41589/64A Expired GB1075706A (en) | 1963-10-15 | 1964-10-12 | Production of dislocation-free single crystals of semiconductor material |
Country Status (6)
Country | Link |
---|---|
US (1) | US3397042A (en) |
JP (1) | JPS4817986B1 (en) |
DE (1) | DE1519912C2 (en) |
GB (1) | GB1075706A (en) |
MY (1) | MY6900259A (en) |
NL (1) | NL6411697A (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1619994B2 (en) * | 1967-03-09 | 1976-07-15 | Siemens AG, 1000 Berlin und 8000 München | PROCESS FOR GROWING A ROD-SHAPED, DISPLACEMENT-FREE SINGLE CRYSTAL OF SILICON BY CRUCIBLE-FREE ZONE MELTING |
US4197157A (en) * | 1975-03-19 | 1980-04-08 | Arthur D. Little, Inc. | Method for forming refractory tubing |
JPS52107183A (en) * | 1976-03-06 | 1977-09-08 | Toshitaka Okamoto | Electric stand shade |
JPS5374781A (en) * | 1976-12-16 | 1978-07-03 | Imagawa Yasuhito | Foldable lamp shade |
US4045181A (en) * | 1976-12-27 | 1977-08-30 | Monsanto Company | Apparatus for zone refining |
JPS546383A (en) * | 1977-06-16 | 1979-01-18 | Yasuhito Imagawa | Foldable lamp shade |
DE3421538A1 (en) * | 1984-06-08 | 1985-12-12 | ATOMIKA Technische Physik GmbH, 8000 München | VACUUM EVAPORATION DEVICE |
DE102014226419A1 (en) * | 2014-12-18 | 2016-06-23 | Siltronic Ag | A method of growing a single crystal by crystallizing the single crystal from a flow zone |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA674121A (en) * | 1963-11-12 | Siemens-Schuckertwerke Aktiengesellschaft | Method and apparatus for producing a strip of hyperpure semiconductor material | |
US2962363A (en) * | 1957-07-09 | 1960-11-29 | Pacific Semiconductors Inc | Crystal pulling apparatus and method |
US3036892A (en) * | 1958-03-05 | 1962-05-29 | Siemens Ag | Production of hyper-pure monocrystal-line rods in continuous operation |
US2981687A (en) * | 1958-04-03 | 1961-04-25 | British Thomson Houston Co Ltd | Production of mono-crystal semiconductor bodies |
DE1153908B (en) * | 1958-04-22 | 1963-09-05 | Siemens Ag | Method and device for crucible-free zone melting with changing the spacing of the rod ends |
US2905798A (en) * | 1958-09-15 | 1959-09-22 | Lindberg Eng Co | Induction heating apparatus |
NL253526A (en) * | 1959-08-14 | |||
NL255530A (en) * | 1959-09-11 | |||
US3135585A (en) * | 1960-03-01 | 1964-06-02 | Gen Electric | Method of growing dislocation-free semiconductor crystals |
FR1282910A (en) * | 1960-03-01 | 1962-01-27 | Thomson Houston Comp Francaise | Method of growth without dislocation of semiconductor crystals |
NL269311A (en) * | 1960-09-20 | |||
GB926487A (en) * | 1960-11-25 | 1963-05-22 | Dorman & Smith Ltd | Improvements in and relating to electrical fuse assemblies |
NL274321A (en) * | 1961-02-07 |
-
1964
- 1964-10-08 NL NL6411697A patent/NL6411697A/xx unknown
- 1964-10-12 GB GB41589/64A patent/GB1075706A/en not_active Expired
- 1964-10-13 DE DE1519912A patent/DE1519912C2/en not_active Expired
- 1964-10-15 JP JP39058378A patent/JPS4817986B1/ja active Pending
-
1965
- 1965-08-27 US US493955A patent/US3397042A/en not_active Expired - Lifetime
-
1969
- 1969-12-31 MY MY1969259A patent/MY6900259A/en unknown
Also Published As
Publication number | Publication date |
---|---|
JPS4817986B1 (en) | 1973-06-02 |
NL6411697A (en) | 1965-04-20 |
US3397042A (en) | 1968-08-13 |
DE1519912B1 (en) | 1970-06-18 |
DE1519912C2 (en) | 1974-10-03 |
MY6900259A (en) | 1969-12-31 |
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