GB1029769A - Improvements in or relating to processes for the production of semiconductor crystals - Google Patents

Improvements in or relating to processes for the production of semiconductor crystals

Info

Publication number
GB1029769A
GB1029769A GB43664/64A GB4366464A GB1029769A GB 1029769 A GB1029769 A GB 1029769A GB 43664/64 A GB43664/64 A GB 43664/64A GB 4366464 A GB4366464 A GB 4366464A GB 1029769 A GB1029769 A GB 1029769A
Authority
GB
United Kingdom
Prior art keywords
crucible
reservoir
melt
dopant
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB43664/64A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB1029769A publication Critical patent/GB1029769A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D11/00—Control of flow ratio
    • G05D11/02—Controlling ratio of two or more flows of fluid or fluent material
    • G05D11/13—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means
    • G05D11/135—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by sensing at least one property of the mixture
    • G05D11/138—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by sensing at least one property of the mixture by sensing the concentration of the mixture, e.g. measuring pH value
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

A monocrystal of semi-conductor material, e.g. germanium or silicon, having a controlled dopant concentration is pulled on a seed 17 (Fig. 1, not shown) from a melt which is contained in a crucible 10 having a capillary bore 16 (Fig. 4, not shown) communicating with a surrounding reservoir 9, crucible 10 being capable of rotary and/or vertical movement on a shaft 11 passing through the base of reservoir 9 in order that the volume of the melt in crucible 10 may be maintained constant or adjusted in accordance with a predetermined programme. Crucible 10 may be rotated at 10-100 revs/min. Antimony or indium may be fed as dopant to crucible 10 or reservoir 9 through a tube 8. The ratio of the dopant concentration of the melt in the reservoir to that in the pulling crucible preferably equals the distribution coefficient of the dopant in the semi-conductor material. A protective gas, e.g. argon, hydrogen or nitrogen, may be supplied via inlet 5 and outlet 6. The pulled rod may have a length of 500 mm, a diameter of 30 mm., a variation in specific resistance over 90% of its length of \sB10%, and a dislocation density of 1,000-3,000 dislocations per cm2. In another embodiment (Fig. 5, not shown), crucible 10 may be lowered to fit closely (with a gap of about 1 mm.) into a recess in the base of reservoir 9 to enable substantially all of the melt to be utilized.
GB43664/64A 1963-10-28 1964-10-27 Improvements in or relating to processes for the production of semiconductor crystals Expired GB1029769A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DES0088062 1963-10-28
DES0088061 1963-10-28
DES0091935 1964-07-08

Publications (1)

Publication Number Publication Date
GB1029769A true GB1029769A (en) 1966-05-18

Family

ID=27212856

Family Applications (1)

Application Number Title Priority Date Filing Date
GB43664/64A Expired GB1029769A (en) 1963-10-28 1964-10-27 Improvements in or relating to processes for the production of semiconductor crystals

Country Status (6)

Country Link
US (1) US3342560A (en)
CH (1) CH440227A (en)
DE (3) DE1444541C3 (en)
GB (1) GB1029769A (en)
NL (1) NL6410933A (en)
SE (1) SE302446B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3637439A (en) * 1968-11-13 1972-01-25 Metallurgie Hoboken Process and apparatus for pulling single crystals of germanium
US4050905A (en) * 1975-05-27 1977-09-27 The Harshaw Chemical Company Growth of doped crystals
US5215620A (en) * 1989-09-19 1993-06-01 Shin-Etsu Handotai Co. Ltd. Method for pulling a silicon single crystal by imposing a periodic rotation rate on a constant rotation rate
JPH0777995B2 (en) * 1989-11-16 1995-08-23 信越半導体株式会社 Single crystal resistivity control method
JPH0777994B2 (en) * 1989-11-16 1995-08-23 信越半導体株式会社 Method and apparatus for controlling oxygen concentration of single crystal
US5593498A (en) * 1995-06-09 1997-01-14 Memc Electronic Materials, Inc. Apparatus for rotating a crucible of a crystal pulling machine
US6059876A (en) * 1997-02-06 2000-05-09 William H. Robinson Method and apparatus for growing crystals
US10125431B2 (en) 2013-06-21 2018-11-13 South Dakota Board Of Regents Method of growing germanium crystals

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2727839A (en) * 1950-06-15 1955-12-20 Bell Telephone Labor Inc Method of producing semiconductive bodies
DE1061527B (en) * 1953-02-14 1959-07-16 Siemens Ag Process for zone-wise remelting of rods and other elongated workpieces
BE528916A (en) * 1953-05-18
US2944875A (en) * 1953-07-13 1960-07-12 Raytheon Co Crystal-growing apparatus and methods
US2809136A (en) * 1954-03-10 1957-10-08 Sylvania Electric Prod Apparatus and method of preparing crystals of silicon germanium group
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
NL212547A (en) * 1956-11-28
BE562704A (en) * 1956-11-28
US2908004A (en) * 1957-05-10 1959-10-06 Levinson John Temperature control for crystal pulling
NL237834A (en) * 1958-04-09
NL238924A (en) * 1959-05-05
NL243511A (en) * 1959-09-18
US3241925A (en) * 1960-08-19 1966-03-22 Union Carbide Corp Apparatus for growing solid homogeneous compositions
US3198606A (en) * 1961-01-23 1965-08-03 Ibm Apparatus for growing crystals
FR1302043A (en) * 1961-08-09 1962-08-24 Union Carbide Corp Apparatus for inducing the growth of solid homogeneous compositions

Also Published As

Publication number Publication date
DE1544250C3 (en) 1974-08-01
DE1251721B (en) 1967-10-12
DE1444541B2 (en) 1973-06-20
NL6410933A (en) 1965-04-29
CH440227A (en) 1967-07-31
SE302446B (en) 1968-07-22
US3342560A (en) 1967-09-19
DE1544250A1 (en) 1970-02-26
DE1444541C3 (en) 1974-01-31
DE1544250B2 (en) 1973-12-20
DE1444541A1 (en) 1970-02-19

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