GB754767A - Improvements in or relating to methods of crystallizing from melts - Google Patents

Improvements in or relating to methods of crystallizing from melts

Info

Publication number
GB754767A
GB754767A GB14184/54A GB1418454A GB754767A GB 754767 A GB754767 A GB 754767A GB 14184/54 A GB14184/54 A GB 14184/54A GB 1418454 A GB1418454 A GB 1418454A GB 754767 A GB754767 A GB 754767A
Authority
GB
United Kingdom
Prior art keywords
pool
crystal
solute concentration
crucible
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB14184/54A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Publication of GB754767A publication Critical patent/GB754767A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22C—FOUNDRY MOULDING
    • B22C9/00—Moulds or cores; Moulding processes
    • B22C9/22—Moulds for peculiarly-shaped castings
    • B22C9/24—Moulds for peculiarly-shaped castings for hollow articles
    • B22C9/26—Moulds for peculiarly-shaped castings for hollow articles for ribbed tubes; for radiators

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

The solute concentration in single crytals, e.g. of semi-conductor material grown from the melt by the Czochralski method is maintained uniform by pulling the crystal from a pool of melt of constant volume, the pool being replenished as the crystal is pulled by material having the same solute concentration as the crystal. If this concentration is very low the replenishing material may be substantially pure. As described, the main bulk 6 of the material, e.g. germanium, having the solute concentration required in the grown crystal is <PICT:0754767/III/1> placed in an outer crucible 1. A closely fitting inner crucible 2 floats on the material 6 which can flow into the inner crucible through a channel 3 in the base of the inner crucible to form a pool 7. A furnace 8 keeps the material molten. A seed 15 is supported by a rotatable holder 16 and the seed and pool 7 can be gradually moved apart by means of an hydraulic jack 23 which lowers the furnace assembly. The growing space is surrounded by a box in which an atmosphere of hydrogen, helium or nitrogen may be maintained. The solute concentration in the pool 7 is initially adjusted by adding solute by a tube 14 so that the ratio of the solute concentration in the pool 7 to the desired solute concentration in the grown crystal is equal to the liquid/solid partition coefficient and growing is started and may be continued until the reserve material in the pool 6 is exhausted. During growth the crystal may be rotated, e.g. at 100 r.p.m. In an example N-type germanium is grown using antimony as solute, the furnace temperature being varied from 971 DEG to 961 DEG C. to maintain uniform crystal cross-section and the growth rate being 0.04 inches per minute maintained for 52 minutes. Hydrogen was passed through the growing space at 50 cc. per minute. The resistivity of the grown crystal was substantially constant. A modified form of crucible is described in Fig. 3 (not shown) and it is stated that a single crucible may be used divided into two communicating compartments. Specification 706,849 is referred to.
GB14184/54A 1953-05-18 1954-05-14 Improvements in or relating to methods of crystallizing from melts Expired GB754767A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US327484XA 1953-05-18 1953-05-18

Publications (1)

Publication Number Publication Date
GB754767A true GB754767A (en) 1956-08-15

Family

ID=21866605

Family Applications (1)

Application Number Title Priority Date Filing Date
GB14184/54A Expired GB754767A (en) 1953-05-18 1954-05-14 Improvements in or relating to methods of crystallizing from melts

Country Status (5)

Country Link
BE (1) BE528916A (en)
CH (1) CH327484A (en)
DE (1) DE1101775B (en)
GB (1) GB754767A (en)
NL (1) NL107897C (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2998335A (en) * 1956-02-04 1961-08-29 Telefunken Gmbh Method and apparatusfor growing single crystals from molten bodies
US3002824A (en) * 1956-11-28 1961-10-03 Philips Corp Method and apparatus for the manufacture of crystalline semiconductors
US3033660A (en) * 1959-05-05 1962-05-08 Philips Corp Method and apparatus for drawing crystals from a melt
DE1141977B (en) * 1958-11-17 1963-01-03 Siemens Ag Process for pulling thin, essentially single-crystal semiconductor rods from a melt
DE1158040B (en) * 1957-11-21 1963-11-28 Int Standard Electric Corp Device for pulling single crystals from semiconductor material
US3481711A (en) * 1964-08-04 1969-12-02 Nippon Electric Co Crystal growth apparatus
GB2147223A (en) * 1983-10-01 1985-05-09 Stc Plc Semiconductor substrates
US4522791A (en) * 1982-12-02 1985-06-11 Texas Instruments Incorporated Arsenic cell stabilization valve for gallium arsenide in-situ compounding
US4612082A (en) * 1982-12-02 1986-09-16 Texas Instruments Incorporated Arsenic cell stabilization valve for gallium arsenide in-situ compounding
EP0261498A2 (en) * 1986-09-22 1988-03-30 Kabushiki Kaisha Toshiba Crystal pulling apparatus

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL236919A (en) * 1957-03-07 1900-01-01
NL112552C (en) * 1957-04-15 1900-01-01
NL229017A (en) * 1957-06-25 1900-01-01
NL238923A (en) * 1959-05-05
DE1251721B (en) * 1963-10-28 1967-10-12 Siemens Aktiengesellschaft, Berlin und München München Method for producing semiconductor stalls, preferably semiconductor stalls with adjustable, for example constant, foreign matter concentration

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE973231C (en) * 1953-01-20 1959-12-24 Telefunken Gmbh Process for the production of single crystals by pulling from a melt

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2998335A (en) * 1956-02-04 1961-08-29 Telefunken Gmbh Method and apparatusfor growing single crystals from molten bodies
US3002824A (en) * 1956-11-28 1961-10-03 Philips Corp Method and apparatus for the manufacture of crystalline semiconductors
DE1272900B (en) * 1956-11-28 1968-07-18 Philips Nv Device for pulling monocrystalline rods from a melt
DE1158040B (en) * 1957-11-21 1963-11-28 Int Standard Electric Corp Device for pulling single crystals from semiconductor material
DE1141977B (en) * 1958-11-17 1963-01-03 Siemens Ag Process for pulling thin, essentially single-crystal semiconductor rods from a melt
US3078151A (en) * 1958-11-17 1963-02-19 Siemens Ag Apparatus for drawing semiconductor bodies from a melt
US3033660A (en) * 1959-05-05 1962-05-08 Philips Corp Method and apparatus for drawing crystals from a melt
US3481711A (en) * 1964-08-04 1969-12-02 Nippon Electric Co Crystal growth apparatus
US4522791A (en) * 1982-12-02 1985-06-11 Texas Instruments Incorporated Arsenic cell stabilization valve for gallium arsenide in-situ compounding
US4612082A (en) * 1982-12-02 1986-09-16 Texas Instruments Incorporated Arsenic cell stabilization valve for gallium arsenide in-situ compounding
GB2147223A (en) * 1983-10-01 1985-05-09 Stc Plc Semiconductor substrates
EP0261498A2 (en) * 1986-09-22 1988-03-30 Kabushiki Kaisha Toshiba Crystal pulling apparatus
EP0261498A3 (en) * 1986-09-22 1989-01-25 Kabushiki Kaisha Toshiba Crystal pulling apparatus
US4894206A (en) * 1986-09-22 1990-01-16 Kabushiki Kaisha Toshiba Crystal pulling apparatus

Also Published As

Publication number Publication date
CH327484A (en) 1958-01-31
NL107897C (en)
DE1101775B (en) 1961-03-09
BE528916A (en)

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