GB754767A - Improvements in or relating to methods of crystallizing from melts - Google Patents
Improvements in or relating to methods of crystallizing from meltsInfo
- Publication number
- GB754767A GB754767A GB14184/54A GB1418454A GB754767A GB 754767 A GB754767 A GB 754767A GB 14184/54 A GB14184/54 A GB 14184/54A GB 1418454 A GB1418454 A GB 1418454A GB 754767 A GB754767 A GB 754767A
- Authority
- GB
- United Kingdom
- Prior art keywords
- pool
- crystal
- solute concentration
- crucible
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22C—FOUNDRY MOULDING
- B22C9/00—Moulds or cores; Moulding processes
- B22C9/22—Moulds for peculiarly-shaped castings
- B22C9/24—Moulds for peculiarly-shaped castings for hollow articles
- B22C9/26—Moulds for peculiarly-shaped castings for hollow articles for ribbed tubes; for radiators
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
The solute concentration in single crytals, e.g. of semi-conductor material grown from the melt by the Czochralski method is maintained uniform by pulling the crystal from a pool of melt of constant volume, the pool being replenished as the crystal is pulled by material having the same solute concentration as the crystal. If this concentration is very low the replenishing material may be substantially pure. As described, the main bulk 6 of the material, e.g. germanium, having the solute concentration required in the grown crystal is <PICT:0754767/III/1> placed in an outer crucible 1. A closely fitting inner crucible 2 floats on the material 6 which can flow into the inner crucible through a channel 3 in the base of the inner crucible to form a pool 7. A furnace 8 keeps the material molten. A seed 15 is supported by a rotatable holder 16 and the seed and pool 7 can be gradually moved apart by means of an hydraulic jack 23 which lowers the furnace assembly. The growing space is surrounded by a box in which an atmosphere of hydrogen, helium or nitrogen may be maintained. The solute concentration in the pool 7 is initially adjusted by adding solute by a tube 14 so that the ratio of the solute concentration in the pool 7 to the desired solute concentration in the grown crystal is equal to the liquid/solid partition coefficient and growing is started and may be continued until the reserve material in the pool 6 is exhausted. During growth the crystal may be rotated, e.g. at 100 r.p.m. In an example N-type germanium is grown using antimony as solute, the furnace temperature being varied from 971 DEG to 961 DEG C. to maintain uniform crystal cross-section and the growth rate being 0.04 inches per minute maintained for 52 minutes. Hydrogen was passed through the growing space at 50 cc. per minute. The resistivity of the grown crystal was substantially constant. A modified form of crucible is described in Fig. 3 (not shown) and it is stated that a single crucible may be used divided into two communicating compartments. Specification 706,849 is referred to.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US327484XA | 1953-05-18 | 1953-05-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB754767A true GB754767A (en) | 1956-08-15 |
Family
ID=21866605
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB14184/54A Expired GB754767A (en) | 1953-05-18 | 1954-05-14 | Improvements in or relating to methods of crystallizing from melts |
Country Status (5)
Country | Link |
---|---|
BE (1) | BE528916A (en) |
CH (1) | CH327484A (en) |
DE (1) | DE1101775B (en) |
GB (1) | GB754767A (en) |
NL (1) | NL107897C (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2998335A (en) * | 1956-02-04 | 1961-08-29 | Telefunken Gmbh | Method and apparatusfor growing single crystals from molten bodies |
US3002824A (en) * | 1956-11-28 | 1961-10-03 | Philips Corp | Method and apparatus for the manufacture of crystalline semiconductors |
US3033660A (en) * | 1959-05-05 | 1962-05-08 | Philips Corp | Method and apparatus for drawing crystals from a melt |
DE1141977B (en) * | 1958-11-17 | 1963-01-03 | Siemens Ag | Process for pulling thin, essentially single-crystal semiconductor rods from a melt |
DE1158040B (en) * | 1957-11-21 | 1963-11-28 | Int Standard Electric Corp | Device for pulling single crystals from semiconductor material |
US3481711A (en) * | 1964-08-04 | 1969-12-02 | Nippon Electric Co | Crystal growth apparatus |
GB2147223A (en) * | 1983-10-01 | 1985-05-09 | Stc Plc | Semiconductor substrates |
US4522791A (en) * | 1982-12-02 | 1985-06-11 | Texas Instruments Incorporated | Arsenic cell stabilization valve for gallium arsenide in-situ compounding |
US4612082A (en) * | 1982-12-02 | 1986-09-16 | Texas Instruments Incorporated | Arsenic cell stabilization valve for gallium arsenide in-situ compounding |
EP0261498A2 (en) * | 1986-09-22 | 1988-03-30 | Kabushiki Kaisha Toshiba | Crystal pulling apparatus |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL236919A (en) * | 1957-03-07 | 1900-01-01 | ||
NL112552C (en) * | 1957-04-15 | 1900-01-01 | ||
NL229017A (en) * | 1957-06-25 | 1900-01-01 | ||
NL238923A (en) * | 1959-05-05 | |||
DE1251721B (en) * | 1963-10-28 | 1967-10-12 | Siemens Aktiengesellschaft, Berlin und München München | Method for producing semiconductor stalls, preferably semiconductor stalls with adjustable, for example constant, foreign matter concentration |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE973231C (en) * | 1953-01-20 | 1959-12-24 | Telefunken Gmbh | Process for the production of single crystals by pulling from a melt |
-
0
- BE BE528916D patent/BE528916A/xx unknown
- NL NL107897D patent/NL107897C/xx active
-
1954
- 1954-05-14 GB GB14184/54A patent/GB754767A/en not_active Expired
- 1954-05-15 DE DEI8660A patent/DE1101775B/en active Pending
- 1954-05-18 CH CH327484D patent/CH327484A/en unknown
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2998335A (en) * | 1956-02-04 | 1961-08-29 | Telefunken Gmbh | Method and apparatusfor growing single crystals from molten bodies |
US3002824A (en) * | 1956-11-28 | 1961-10-03 | Philips Corp | Method and apparatus for the manufacture of crystalline semiconductors |
DE1272900B (en) * | 1956-11-28 | 1968-07-18 | Philips Nv | Device for pulling monocrystalline rods from a melt |
DE1158040B (en) * | 1957-11-21 | 1963-11-28 | Int Standard Electric Corp | Device for pulling single crystals from semiconductor material |
DE1141977B (en) * | 1958-11-17 | 1963-01-03 | Siemens Ag | Process for pulling thin, essentially single-crystal semiconductor rods from a melt |
US3078151A (en) * | 1958-11-17 | 1963-02-19 | Siemens Ag | Apparatus for drawing semiconductor bodies from a melt |
US3033660A (en) * | 1959-05-05 | 1962-05-08 | Philips Corp | Method and apparatus for drawing crystals from a melt |
US3481711A (en) * | 1964-08-04 | 1969-12-02 | Nippon Electric Co | Crystal growth apparatus |
US4522791A (en) * | 1982-12-02 | 1985-06-11 | Texas Instruments Incorporated | Arsenic cell stabilization valve for gallium arsenide in-situ compounding |
US4612082A (en) * | 1982-12-02 | 1986-09-16 | Texas Instruments Incorporated | Arsenic cell stabilization valve for gallium arsenide in-situ compounding |
GB2147223A (en) * | 1983-10-01 | 1985-05-09 | Stc Plc | Semiconductor substrates |
EP0261498A2 (en) * | 1986-09-22 | 1988-03-30 | Kabushiki Kaisha Toshiba | Crystal pulling apparatus |
EP0261498A3 (en) * | 1986-09-22 | 1989-01-25 | Kabushiki Kaisha Toshiba | Crystal pulling apparatus |
US4894206A (en) * | 1986-09-22 | 1990-01-16 | Kabushiki Kaisha Toshiba | Crystal pulling apparatus |
Also Published As
Publication number | Publication date |
---|---|
CH327484A (en) | 1958-01-31 |
NL107897C (en) | |
DE1101775B (en) | 1961-03-09 |
BE528916A (en) |
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