GB0601776D0 - Solder alloy and A semiconductor device using the solder alloy - Google Patents

Solder alloy and A semiconductor device using the solder alloy

Info

Publication number
GB0601776D0
GB0601776D0 GBGB0601776.8A GB0601776A GB0601776D0 GB 0601776 D0 GB0601776 D0 GB 0601776D0 GB 0601776 A GB0601776 A GB 0601776A GB 0601776 D0 GB0601776 D0 GB 0601776D0
Authority
GB
United Kingdom
Prior art keywords
solder alloy
semiconductor device
semiconductor chip
insulative substrate
conductor pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB0601776.8A
Other versions
GB2426251B (en
GB2426251A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Device Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Device Technology Co Ltd filed Critical Fuji Electric Device Technology Co Ltd
Publication of GB0601776D0 publication Critical patent/GB0601776D0/en
Publication of GB2426251A publication Critical patent/GB2426251A/en
Application granted granted Critical
Publication of GB2426251B publication Critical patent/GB2426251B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C13/00Alloys based on tin
    • C22C13/02Alloys based on tin with antimony or bismuth as the next major constituent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/26Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262Sn as the principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01051Antimony [Sb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01075Rhenium [Re]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A solder alloy contains from 3 to 5 wt % of antimony (Sb), not more than 0.2 wt % of germanium (Ge), and the balance of tin (Sn). In a semiconductor device, the solder alloy can be used to join a semiconductor chip and a conductor pattern on the front surface of an insulative substrate, a conductor pattern on the back surface of the insulative substrate and a heat sink plate, and the semiconductor chip and a wiring conductor. The solder alloy exhibits excellent wettability and satisfactory bonding performance.
GB0601776A 2005-05-20 2006-01-30 Solder alloy and a semiconductor device using the solder alloy Expired - Fee Related GB2426251B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005148730A JP4635715B2 (en) 2005-05-20 2005-05-20 Solder alloy and semiconductor device using the same

Publications (3)

Publication Number Publication Date
GB0601776D0 true GB0601776D0 (en) 2006-03-08
GB2426251A GB2426251A (en) 2006-11-22
GB2426251B GB2426251B (en) 2007-10-10

Family

ID=36061073

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0601776A Expired - Fee Related GB2426251B (en) 2005-05-20 2006-01-30 Solder alloy and a semiconductor device using the solder alloy

Country Status (5)

Country Link
US (1) US20060263235A1 (en)
JP (1) JP4635715B2 (en)
CN (3) CN102637662B (en)
DE (1) DE102006005271B4 (en)
GB (1) GB2426251B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008221330A (en) * 2007-03-16 2008-09-25 Fuji Electric Holdings Co Ltd Solder alloy
KR101163329B1 (en) * 2008-02-22 2012-07-05 가부시키가이샤 고베 세이코쇼 Touch panel sensor
JP2009283741A (en) * 2008-05-23 2009-12-03 Fuji Electric Device Technology Co Ltd Semiconductor device
TWI541488B (en) * 2011-08-29 2016-07-11 奇鋐科技股份有限公司 Heat dissipation device and method of manufacturing same
CN102717201B (en) * 2012-07-04 2015-04-22 深圳市斯特纳新材料有限公司 High-strength high-temperature soldering flux with corrosion resistance
EP3112080A4 (en) * 2014-02-24 2017-11-29 Koki Company Limited Lead-free solder alloy, solder material, and joined structure
CN108428682B (en) * 2018-04-13 2020-08-18 江西江铃集团新能源汽车有限公司 Power module and preparation method thereof

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62230493A (en) * 1986-03-31 1987-10-09 Taruchin Kk Solder alloy
JP3269745B2 (en) * 1995-01-17 2002-04-02 株式会社日立製作所 Modular semiconductor device
JPH09330941A (en) * 1996-06-13 1997-12-22 Toshiba Corp High heat-conduction paste solder and semiconductor device
JP3226213B2 (en) * 1996-10-17 2001-11-05 松下電器産業株式会社 Solder material and electronic component using the same
US6033488A (en) * 1996-11-05 2000-03-07 Samsung Electronics Co., Ltd. Solder alloy
KR19980068127A (en) * 1997-02-15 1998-10-15 김광호 Lead-Free Alloys for Soldering
US6179935B1 (en) * 1997-04-16 2001-01-30 Fuji Electric Co., Ltd. Solder alloys
JP3353662B2 (en) * 1997-08-07 2002-12-03 富士電機株式会社 Solder alloy
CN1144649C (en) * 1999-06-11 2004-04-07 日本板硝子株式会社 Lead-free solder
JP2002232022A (en) * 2001-01-31 2002-08-16 Aisin Seiki Co Ltd Thermoelectric module and its manufacturing method
JP2002321084A (en) * 2001-04-26 2002-11-05 Sumitomo Metal Mining Co Ltd Soldering alloy for joining electronic parts
TW592872B (en) * 2001-06-28 2004-06-21 Senju Metal Industry Co Lead-free solder alloy
JP2003094194A (en) * 2001-07-16 2003-04-02 Uchihashi Estec Co Ltd Fixing method for soldering material and member of electronic part
US20030178719A1 (en) * 2002-03-22 2003-09-25 Combs Edward G. Enhanced thermal dissipation integrated circuit package and method of manufacturing enhanced thermal dissipation integrated circuit package
JP2004017093A (en) * 2002-06-17 2004-01-22 Toshiba Corp Lead-free solder alloy and lead-free solder paste using the same
CN1230567C (en) * 2003-07-02 2005-12-07 中国科学院金属研究所 Industrial pure tin with resistance to liquid surface oxidizing and application

Also Published As

Publication number Publication date
CN101905388B (en) 2012-05-30
US20060263235A1 (en) 2006-11-23
JP4635715B2 (en) 2011-02-23
DE102006005271A1 (en) 2006-11-23
GB2426251B (en) 2007-10-10
CN1864909B (en) 2012-05-30
JP2006320955A (en) 2006-11-30
GB2426251A (en) 2006-11-22
CN102637662A (en) 2012-08-15
CN1864909A (en) 2006-11-22
CN101905388A (en) 2010-12-08
CN102637662B (en) 2014-09-24
DE102006005271B4 (en) 2012-12-06

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20100401 AND 20100407

732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20110908 AND 20110914

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20150130