ATE456155T1 - FIELD EFFECT TRANSISTOR SEMICONDUCTOR COMPONENT - Google Patents
FIELD EFFECT TRANSISTOR SEMICONDUCTOR COMPONENTInfo
- Publication number
- ATE456155T1 ATE456155T1 AT02781506T AT02781506T ATE456155T1 AT E456155 T1 ATE456155 T1 AT E456155T1 AT 02781506 T AT02781506 T AT 02781506T AT 02781506 T AT02781506 T AT 02781506T AT E456155 T1 ATE456155 T1 AT E456155T1
- Authority
- AT
- Austria
- Prior art keywords
- field effect
- effect transistor
- semiconductor component
- transistor semiconductor
- component
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0127479.4A GB0127479D0 (en) | 2001-11-16 | 2001-11-16 | Trench-gate semiconductor devices and the manufacture thereof |
| GBGB0130019.3A GB0130019D0 (en) | 2001-11-16 | 2001-12-17 | Trench-gate semiconductor devices and the manufacture thereof |
| GB0221839A GB0221839D0 (en) | 2001-11-16 | 2002-09-20 | A field effect transistor semiconductor device |
| PCT/IB2002/004759 WO2003043089A1 (en) | 2001-11-16 | 2002-11-13 | A field effect transistor semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE456155T1 true ATE456155T1 (en) | 2010-02-15 |
Family
ID=9925865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02781506T ATE456155T1 (en) | 2001-11-16 | 2002-11-13 | FIELD EFFECT TRANSISTOR SEMICONDUCTOR COMPONENT |
Country Status (4)
| Country | Link |
|---|---|
| KR (2) | KR20040065560A (en) |
| AT (1) | ATE456155T1 (en) |
| DE (1) | DE60235187D1 (en) |
| GB (2) | GB0127479D0 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007184553A (en) * | 2005-12-06 | 2007-07-19 | Sanyo Electric Co Ltd | Semiconductor device and its fabrication process |
| JP5128100B2 (en) * | 2006-09-29 | 2013-01-23 | 三菱電機株式会社 | Power semiconductor device |
| US7994573B2 (en) | 2007-12-14 | 2011-08-09 | Fairchild Semiconductor Corporation | Structure and method for forming power devices with carbon-containing region |
| KR102053354B1 (en) * | 2013-07-17 | 2019-12-06 | 삼성전자주식회사 | A semiconductor device having a buried channel array and method of manufacturing the same |
-
2001
- 2001-11-16 GB GBGB0127479.4A patent/GB0127479D0/en not_active Ceased
- 2001-12-17 GB GBGB0130019.3A patent/GB0130019D0/en not_active Ceased
-
2002
- 2002-11-13 KR KR10-2004-7007430A patent/KR20040065560A/en active IP Right Grant
- 2002-11-13 DE DE60235187T patent/DE60235187D1/en not_active Expired - Lifetime
- 2002-11-13 AT AT02781506T patent/ATE456155T1/en not_active IP Right Cessation
- 2002-11-14 KR KR10-2004-7007403A patent/KR20040065224A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| GB0127479D0 (en) | 2002-01-09 |
| GB0130019D0 (en) | 2002-02-06 |
| KR20040065560A (en) | 2004-07-22 |
| KR20040065224A (en) | 2004-07-21 |
| DE60235187D1 (en) | 2010-03-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |