FR3125352B1 - Cellule mémoire programmable une seule fois - Google Patents
Cellule mémoire programmable une seule fois Download PDFInfo
- Publication number
- FR3125352B1 FR3125352B1 FR2107602A FR2107602A FR3125352B1 FR 3125352 B1 FR3125352 B1 FR 3125352B1 FR 2107602 A FR2107602 A FR 2107602A FR 2107602 A FR2107602 A FR 2107602A FR 3125352 B1 FR3125352 B1 FR 3125352B1
- Authority
- FR
- France
- Prior art keywords
- memory cell
- time programmable
- programmable memory
- channel portion
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 abstract 2
- 239000003990 capacitor Substances 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/04—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using capacitive elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
- H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
Landscapes
- Semiconductor Memories (AREA)
Abstract
Cellule mémoire programmable une seule fois La présente description concerne une cellule mémoire programmable une seule fois (OTP) comprenant un transistor (10) comprenant au moins un premier élément conducteur de grille (101) agencé dans au moins une première tranchée (102) formée dans un substrat (25) semiconducteur ; au moins une première portion de canal (103), enterrée dans le substrat (25) et s’étendant au niveau d’au moins une première face latérale (101a) du premier élément conducteur de grille (101); et une capacité (30) apte à former une mémoire ; ladite première portion de canal (103) étant reliée à une électrode de la capacité (30). Figure pour l'abrégé : Fig. 2
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2107602A FR3125352B1 (fr) | 2021-07-13 | 2021-07-13 | Cellule mémoire programmable une seule fois |
US17/861,329 US20230019484A1 (en) | 2021-07-13 | 2022-07-11 | One-time programmable memory cell |
CN202210819607.7A CN115623786A (zh) | 2021-07-13 | 2022-07-12 | 一次性可编程存储器单元 |
CN202221792563.5U CN218244271U (zh) | 2021-07-13 | 2022-07-12 | 存储器单元和电子设备 |
EP22184345.1A EP4120275A1 (fr) | 2021-07-13 | 2022-07-12 | Cellule mémoire programmable une seule fois |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2107602 | 2021-07-13 | ||
FR2107602A FR3125352B1 (fr) | 2021-07-13 | 2021-07-13 | Cellule mémoire programmable une seule fois |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3125352A1 FR3125352A1 (fr) | 2023-01-20 |
FR3125352B1 true FR3125352B1 (fr) | 2024-05-17 |
Family
ID=77180276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR2107602A Active FR3125352B1 (fr) | 2021-07-13 | 2021-07-13 | Cellule mémoire programmable une seule fois |
Country Status (3)
Country | Link |
---|---|
US (1) | US20230019484A1 (fr) |
EP (1) | EP4120275A1 (fr) |
FR (1) | FR3125352B1 (fr) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4683486A (en) * | 1984-09-24 | 1987-07-28 | Texas Instruments Incorporated | dRAM cell and array |
US8773881B2 (en) * | 2009-03-10 | 2014-07-08 | Contour Semiconductor, Inc. | Vertical switch three-dimensional memory array |
KR101127446B1 (ko) * | 2009-06-05 | 2012-03-23 | 매그나칩 반도체 유한회사 | 비휘발성 메모리 장치의 단위 셀 및 이를 구비한 비휘발성 메모리 장치 |
US8530312B2 (en) * | 2011-08-08 | 2013-09-10 | Micron Technology, Inc. | Vertical devices and methods of forming |
KR102159925B1 (ko) * | 2014-04-10 | 2020-09-25 | 삼성전자 주식회사 | 반도체 장치 |
US9887010B2 (en) * | 2016-01-21 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, and driving method thereof |
-
2021
- 2021-07-13 FR FR2107602A patent/FR3125352B1/fr active Active
-
2022
- 2022-07-11 US US17/861,329 patent/US20230019484A1/en active Pending
- 2022-07-12 EP EP22184345.1A patent/EP4120275A1/fr active Pending
Also Published As
Publication number | Publication date |
---|---|
EP4120275A1 (fr) | 2023-01-18 |
FR3125352A1 (fr) | 2023-01-20 |
US20230019484A1 (en) | 2023-01-19 |
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Legal Events
Date | Code | Title | Description |
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PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20230120 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
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PLFP | Fee payment |
Year of fee payment: 4 |