FR3082076B1 - Dispositif de commutation autoalimente et procede de fonctionnement d'un tel dispositif - Google Patents
Dispositif de commutation autoalimente et procede de fonctionnement d'un tel dispositif Download PDFInfo
- Publication number
- FR3082076B1 FR3082076B1 FR1854789A FR1854789A FR3082076B1 FR 3082076 B1 FR3082076 B1 FR 3082076B1 FR 1854789 A FR1854789 A FR 1854789A FR 1854789 A FR1854789 A FR 1854789A FR 3082076 B1 FR3082076 B1 FR 3082076B1
- Authority
- FR
- France
- Prior art keywords
- fault
- pin
- circuit
- self
- operating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012544 monitoring process Methods 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/18—Modifications for indicating state of switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
Landscapes
- Electronic Switches (AREA)
- Dc-Dc Converters (AREA)
- Semiconductor Integrated Circuits (AREA)
- Power Conversion In General (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1854789A FR3082076B1 (fr) | 2018-06-01 | 2018-06-01 | Dispositif de commutation autoalimente et procede de fonctionnement d'un tel dispositif |
PCT/FR2019/051217 WO2019229341A1 (fr) | 2018-06-01 | 2019-05-27 | Dispositif de commutation autoalimente et procede de fonctionnement d'un tel dispositif |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1854789A FR3082076B1 (fr) | 2018-06-01 | 2018-06-01 | Dispositif de commutation autoalimente et procede de fonctionnement d'un tel dispositif |
FR1854789 | 2018-06-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3082076A1 FR3082076A1 (fr) | 2019-12-06 |
FR3082076B1 true FR3082076B1 (fr) | 2020-05-08 |
Family
ID=63490606
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1854789A Active FR3082076B1 (fr) | 2018-06-01 | 2018-06-01 | Dispositif de commutation autoalimente et procede de fonctionnement d'un tel dispositif |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR3082076B1 (fr) |
WO (1) | WO2019229341A1 (fr) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7820511B2 (en) * | 2004-07-08 | 2010-10-26 | Semisouth Laboratories, Inc. | Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making |
JP6470284B2 (ja) * | 2013-11-15 | 2019-02-13 | 日本テキサス・インスツルメンツ合同会社 | デプリーションモードトランジスタを制御するための方法及び回路要素 |
US9559683B2 (en) * | 2014-08-29 | 2017-01-31 | Infineon Technologies Austria Ag | System and method for a switch having a normally-on transistor and a normally-off transistor |
WO2017203187A1 (fr) | 2016-05-26 | 2017-11-30 | Exagan | Circuit intégré comprenant une pluralité de puces formées d'un transistor à haute tension et comprenant une puce formée d'un transistor à basse tension |
-
2018
- 2018-06-01 FR FR1854789A patent/FR3082076B1/fr active Active
-
2019
- 2019-05-27 WO PCT/FR2019/051217 patent/WO2019229341A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2019229341A1 (fr) | 2019-12-05 |
FR3082076A1 (fr) | 2019-12-06 |
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Legal Events
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PLFP | Fee payment |
Year of fee payment: 2 |
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PLSC | Publication of the preliminary search report |
Effective date: 20191206 |
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Year of fee payment: 3 |
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Year of fee payment: 4 |
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Year of fee payment: 5 |
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PLFP | Fee payment |
Year of fee payment: 6 |
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TP | Transmission of property |
Owner name: STMICROELECTRONICS FRANCE, FR Effective date: 20230830 |
|
CD | Change of name or company name |
Owner name: STMICROELECTRONICS FRANCE, FR Effective date: 20230905 |
|
CJ | Change in legal form |
Effective date: 20230905 |
|
PLFP | Fee payment |
Year of fee payment: 7 |