FR3082076B1 - SELF-POWERED SWITCHING DEVICE AND METHOD FOR OPERATING SUCH A DEVICE - Google Patents
SELF-POWERED SWITCHING DEVICE AND METHOD FOR OPERATING SUCH A DEVICE Download PDFInfo
- Publication number
- FR3082076B1 FR3082076B1 FR1854789A FR1854789A FR3082076B1 FR 3082076 B1 FR3082076 B1 FR 3082076B1 FR 1854789 A FR1854789 A FR 1854789A FR 1854789 A FR1854789 A FR 1854789A FR 3082076 B1 FR3082076 B1 FR 3082076B1
- Authority
- FR
- France
- Prior art keywords
- fault
- pin
- circuit
- self
- operating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012544 monitoring process Methods 0.000 abstract 2
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/18—Modifications for indicating state of switch
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
Landscapes
- Electronic Switches (AREA)
- Dc-Dc Converters (AREA)
- Semiconductor Integrated Circuits (AREA)
- Power Conversion In General (AREA)
Abstract
L'invention porte sur un circuit intégré (11) de commutation d'une charge comprenant un boitier, des broches de puissance (11a, 11b), une broche d'alimentation (Va), une broche de défaillance (FAULT), une première puce électronique (15) comprenant un transistor haute tension en mode déplétion, une deuxième puce électronique (16) comprenant un transistor basse tension en mode enrichissement (6), un circuit de surveillance du bon fonctionnement du circuit intégré (11) relié à la broche d'alimentation (Va), le circuit de surveillance (30) établissant un signal de défaillance rapporté sur la broche de défaillance (FAULT). L'invention porte également sur un dispositif de commutation comprenant au moins un tel circuit intégré de commutation et un organe de commande.An integrated circuit (11) for switching a load comprising a housing, power pins (11a, 11b), a power pin (Va), a fault pin (FAULT), a first electronic chip (15) comprising a high voltage transistor in depletion mode, a second electronic chip (16) comprising a low voltage transistor in enrichment mode (6), a circuit for monitoring the proper functioning of the integrated circuit (11) connected to the pin power supply (Va), the monitoring circuit (30) establishing a failure signal reported on the fault pin (FAULT). The invention also relates to a switching device comprising at least one such integrated switching circuit and a control member.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1854789A FR3082076B1 (en) | 2018-06-01 | 2018-06-01 | SELF-POWERED SWITCHING DEVICE AND METHOD FOR OPERATING SUCH A DEVICE |
PCT/FR2019/051217 WO2019229341A1 (en) | 2018-06-01 | 2019-05-27 | Self-powered switching device and method for operating such a device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1854789 | 2018-06-01 | ||
FR1854789A FR3082076B1 (en) | 2018-06-01 | 2018-06-01 | SELF-POWERED SWITCHING DEVICE AND METHOD FOR OPERATING SUCH A DEVICE |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3082076A1 FR3082076A1 (en) | 2019-12-06 |
FR3082076B1 true FR3082076B1 (en) | 2020-05-08 |
Family
ID=63490606
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1854789A Active FR3082076B1 (en) | 2018-06-01 | 2018-06-01 | SELF-POWERED SWITCHING DEVICE AND METHOD FOR OPERATING SUCH A DEVICE |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR3082076B1 (en) |
WO (1) | WO2019229341A1 (en) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7820511B2 (en) * | 2004-07-08 | 2010-10-26 | Semisouth Laboratories, Inc. | Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making |
CN105874598B (en) * | 2013-11-15 | 2019-06-18 | 德克萨斯仪器股份有限公司 | For controlling the method and circuit of depletion mode transistor |
US9559683B2 (en) * | 2014-08-29 | 2017-01-31 | Infineon Technologies Austria Ag | System and method for a switch having a normally-on transistor and a normally-off transistor |
WO2017203186A1 (en) | 2016-05-26 | 2017-11-30 | Exagan | Integrated circuit comprising a chip formed by a high-voltage transistor and comprising a chip formed by a low-voltage transistor |
-
2018
- 2018-06-01 FR FR1854789A patent/FR3082076B1/en active Active
-
2019
- 2019-05-27 WO PCT/FR2019/051217 patent/WO2019229341A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
FR3082076A1 (en) | 2019-12-06 |
WO2019229341A1 (en) | 2019-12-05 |
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Legal Events
Date | Code | Title | Description |
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PLFP | Fee payment |
Year of fee payment: 2 |
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PLSC | Publication of the preliminary search report |
Effective date: 20191206 |
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PLFP | Fee payment |
Year of fee payment: 3 |
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PLFP | Fee payment |
Year of fee payment: 4 |
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PLFP | Fee payment |
Year of fee payment: 5 |
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PLFP | Fee payment |
Year of fee payment: 6 |
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TP | Transmission of property |
Owner name: STMICROELECTRONICS FRANCE, FR Effective date: 20230830 |
|
CD | Change of name or company name |
Owner name: STMICROELECTRONICS FRANCE, FR Effective date: 20230905 |
|
CJ | Change in legal form |
Effective date: 20230905 |
|
PLFP | Fee payment |
Year of fee payment: 7 |