FR2987447B1 - Dispositif de capteur micromecanique a porte mobile et son procede de fabrication - Google Patents

Dispositif de capteur micromecanique a porte mobile et son procede de fabrication

Info

Publication number
FR2987447B1
FR2987447B1 FR1351545A FR1351545A FR2987447B1 FR 2987447 B1 FR2987447 B1 FR 2987447B1 FR 1351545 A FR1351545 A FR 1351545A FR 1351545 A FR1351545 A FR 1351545A FR 2987447 B1 FR2987447 B1 FR 2987447B1
Authority
FR
France
Prior art keywords
micromechanical
manufacturing
same
holder device
mobile holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1351545A
Other languages
English (en)
Other versions
FR2987447A1 (fr
Inventor
Oleg Jakovlev
Alexander Buhmann
Ando Feyh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of FR2987447A1 publication Critical patent/FR2987447A1/fr
Application granted granted Critical
Publication of FR2987447B1 publication Critical patent/FR2987447B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/00698—Electrical characteristics, e.g. by doping materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Pressure Sensors (AREA)
FR1351545A 2012-02-23 2013-02-22 Dispositif de capteur micromecanique a porte mobile et son procede de fabrication Expired - Fee Related FR2987447B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE201210202783 DE102012202783A1 (de) 2012-02-23 2012-02-23 Mikromechanische Sensorvorrichtung mit beweglichem Gate und entsprechendes Herstellungsverfahren

Publications (2)

Publication Number Publication Date
FR2987447A1 FR2987447A1 (fr) 2013-08-30
FR2987447B1 true FR2987447B1 (fr) 2017-06-23

Family

ID=48950727

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1351545A Expired - Fee Related FR2987447B1 (fr) 2012-02-23 2013-02-22 Dispositif de capteur micromecanique a porte mobile et son procede de fabrication

Country Status (4)

Country Link
US (1) US8975669B2 (fr)
CN (1) CN103288036A (fr)
DE (1) DE102012202783A1 (fr)
FR (1) FR2987447B1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8704314B2 (en) * 2007-12-06 2014-04-22 Massachusetts Institute Of Technology Mechanical memory transistor
DE102014215921A1 (de) 2014-08-12 2016-02-18 Robert Bosch Gmbh Mikroelektrochemische Sensorvorrichtung
KR101767726B1 (ko) * 2015-06-25 2017-08-23 한양대학교 산학협력단 디랙 물질을 구비한 압력 감지 소자 및 이의 동작 방법
DE102015213454A1 (de) 2015-07-17 2017-01-19 Robert Bosch Gmbh Sensorelement zur Erfassung mindestens einer Eigenschaft eines Messgases in einem Messgasraum
DE102015215437A1 (de) 2015-08-13 2017-02-16 Robert Bosch Gmbh Sensorelement zur Erfassung mindestens einer Eigenschaft eines Messgases in einem Messgasraum
EP3373343B1 (fr) * 2017-03-09 2021-09-15 Technische Universität Berlin Dispositif à semi-conducteur comportant une zone active protégée d'un champ interne

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5504356A (en) * 1992-11-16 1996-04-02 Nippondenso Co., Ltd. Semiconductor accelerometer
DE4445553A1 (de) 1993-12-21 1995-06-22 Nippon Denso Co Halbleiterbeschleunigungssensor
JP3613838B2 (ja) * 1995-05-18 2005-01-26 株式会社デンソー 半導体装置の製造方法
JP3489273B2 (ja) * 1995-06-27 2004-01-19 株式会社デンソー 半導体力学量センサの製造方法
DE19844676C1 (de) 1998-09-29 2000-08-03 Siemens Ag Mikromechanischer Sensor auf Basis des Feldeffekts und dessen Verwendung
US6943407B2 (en) * 2003-06-17 2005-09-13 International Business Machines Corporation Low leakage heterojunction vertical transistors and high performance devices thereof
CN101093857A (zh) * 2003-09-05 2007-12-26 株式会社东芝 场效应型晶体管及其制造方法
US7061660B1 (en) * 2005-04-13 2006-06-13 Hewlett-Packard Development Company, L.P. MEMs device with feedback control
JP4711061B2 (ja) * 2005-09-13 2011-06-29 セイコーエプソン株式会社 半導体装置
JP5058529B2 (ja) * 2006-08-18 2012-10-24 ラピスセミコンダクタ株式会社 高耐圧電界効果トランジスタの製造方法
CN101303239B (zh) * 2007-05-10 2010-05-26 北方工业大学 一种传感器及其调节方法
KR101263648B1 (ko) * 2007-08-31 2013-05-21 삼성전자주식회사 핀 전계 효과 트랜지스터 및 그 제조 방법.
WO2009128084A1 (fr) * 2008-04-15 2009-10-22 Indian Institute Of Science Capteur tec de déviation élastique sous le seuil pour détecter une pression/force, procédé et système à cet effet
DE102009002723A1 (de) * 2009-04-29 2010-11-04 Robert Bosch Gmbh Messelement
US8492834B2 (en) * 2011-08-22 2013-07-23 United Microelectronics Corp. Electrostatic discharge protection device and applications thereof

Also Published As

Publication number Publication date
CN103288036A (zh) 2013-09-11
US20130221411A1 (en) 2013-08-29
US8975669B2 (en) 2015-03-10
DE102012202783A1 (de) 2013-08-29
FR2987447A1 (fr) 2013-08-30

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