FR2986633B1 - Dispositif de detection d'une attaque par laser dans une puce de circuit integre - Google Patents

Dispositif de detection d'une attaque par laser dans une puce de circuit integre

Info

Publication number
FR2986633B1
FR2986633B1 FR1251151A FR1251151A FR2986633B1 FR 2986633 B1 FR2986633 B1 FR 2986633B1 FR 1251151 A FR1251151 A FR 1251151A FR 1251151 A FR1251151 A FR 1251151A FR 2986633 B1 FR2986633 B1 FR 2986633B1
Authority
FR
France
Prior art keywords
detection
integrated circuit
circuit chip
laser attack
attack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1251151A
Other languages
English (en)
Other versions
FR2986633A1 (fr
Inventor
Fabrice Marinet
Jimmy Fort
Alexandre Sarafianos
Julien Mercier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1251151A priority Critical patent/FR2986633B1/fr
Priority to US13/751,549 priority patent/US8907452B2/en
Publication of FR2986633A1 publication Critical patent/FR2986633A1/fr
Application granted granted Critical
Publication of FR2986633B1 publication Critical patent/FR2986633B1/fr
Priority to US14/531,025 priority patent/US9070697B2/en
Priority to US14/686,908 priority patent/US9379066B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/57—Protection from inspection, reverse engineering or tampering
    • H01L23/576—Protection from inspection, reverse engineering or tampering using active circuits
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09C—CIPHERING OR DECIPHERING APPARATUS FOR CRYPTOGRAPHIC OR OTHER PURPOSES INVOLVING THE NEED FOR SECRECY
    • G09C1/00—Apparatus or methods whereby a given sequence of signs, e.g. an intelligible text, is transformed into an unintelligible sequence of signs by transposing the signs or groups of signs or by replacing them by others according to a predetermined system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/57—Protection from inspection, reverse engineering or tampering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L9/00—Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols
    • H04L9/002—Countermeasures against attacks on cryptographic mechanisms
    • H04L9/004—Countermeasures against attacks on cryptographic mechanisms for fault attacks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L2209/00—Additional information or applications relating to cryptographic mechanisms or cryptographic arrangements for secret or secure communication H04L9/00
    • H04L2209/12—Details relating to cryptographic hardware or logic circuitry

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Computer Security & Cryptography (AREA)
  • Ceramic Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR1251151A 2012-02-08 2012-02-08 Dispositif de detection d'une attaque par laser dans une puce de circuit integre Expired - Fee Related FR2986633B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1251151A FR2986633B1 (fr) 2012-02-08 2012-02-08 Dispositif de detection d'une attaque par laser dans une puce de circuit integre
US13/751,549 US8907452B2 (en) 2012-02-08 2013-01-28 Device for detecting a laser attack in an integrated circuit chip
US14/531,025 US9070697B2 (en) 2012-02-08 2014-11-03 Device for detecting a laser attack in an integrated circuit chip
US14/686,908 US9379066B2 (en) 2012-02-08 2015-04-15 Device for detecting a laser attack in an integrated circuit chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1251151A FR2986633B1 (fr) 2012-02-08 2012-02-08 Dispositif de detection d'une attaque par laser dans une puce de circuit integre

Publications (2)

Publication Number Publication Date
FR2986633A1 FR2986633A1 (fr) 2013-08-09
FR2986633B1 true FR2986633B1 (fr) 2014-09-05

Family

ID=46456650

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1251151A Expired - Fee Related FR2986633B1 (fr) 2012-02-08 2012-02-08 Dispositif de detection d'une attaque par laser dans une puce de circuit integre

Country Status (2)

Country Link
US (3) US8907452B2 (fr)
FR (1) FR2986633B1 (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2981783B1 (fr) * 2011-10-19 2014-05-09 St Microelectronics Rousset Systeme de detection d'une attaque par laser d'une puce de circuit integre
FR2986633B1 (fr) * 2012-02-08 2014-09-05 St Microelectronics Rousset Dispositif de detection d'une attaque par laser dans une puce de circuit integre
FR2991083A1 (fr) * 2012-05-24 2013-11-29 St Microelectronics Grenoble 2 Procede et dispositif de protection d'un circuit integre contre des attaques par sa face arriere
DE102013112552B4 (de) * 2013-11-14 2017-05-24 Infineon Technologies Ag Schaltungsanordnung und Verfahren zum Sichern einer Schaltungsanordnung gegen wiederholte Lichtangriffe
KR102341264B1 (ko) 2015-02-02 2021-12-20 삼성전자주식회사 래치를 이용한 레이저 검출기 및 이를 포함하는 반도체 장치
FR3042891B1 (fr) * 2015-10-22 2018-03-23 Stmicroelectronics (Rousset) Sas Puce electronique securisee
GB201607589D0 (en) * 2016-04-29 2016-06-15 Nagravision Sa Integrated circuit device
US10298682B2 (en) 2016-08-05 2019-05-21 Bank Of America Corporation Controlling device data collectors using omni-collection techniques
US10250258B2 (en) * 2016-09-28 2019-04-02 Nxp B.V. Device and method for detecting semiconductor substrate thickness
FR3057087B1 (fr) * 2016-09-30 2018-11-16 Stmicroelectronics (Rousset) Sas Puce electronique protegee
US9754901B1 (en) 2016-11-21 2017-09-05 Cisco Technology, Inc. Bulk thinning detector
US10548216B2 (en) 2017-03-21 2020-01-28 International Business Machines Corporation Employing conductive track writing in a tamper-respondent system
CN111430447B (zh) * 2019-02-25 2023-02-28 合肥晶合集成电路股份有限公司 电流源及其形成方法
DE102019105249B4 (de) * 2019-03-01 2020-11-05 Infineon Technologies Ag Integrierte schaltung
DE102019116468B3 (de) 2019-06-18 2020-10-29 Infineon Technologies Ag Integrierte Schaltung mit Detektionsschaltung und zugehörige Chipkarte
KR20210089281A (ko) 2020-01-07 2021-07-16 삼성전자주식회사 반도체 장치의 방어 회로 및 이를 포함하는 반도체 장치
CZ2020153A3 (cs) 2020-03-19 2021-08-11 ÄŚeskĂ© vysokĂ© uÄŤenĂ­ technickĂ© v Praze Zapojení standardní buňky CMOS se sníženou datovou závislostí statické spotřeby
US11031349B1 (en) 2020-04-24 2021-06-08 Semiconductor Components Industries, Llc Method of forming a semiconductor device and current sensing circuit therefor
WO2022027587A1 (fr) 2020-08-07 2022-02-10 深圳市汇顶科技股份有限公司 Circuit de détection d'attaque par injection de défaut laser pour puce, et puce de sécurité
WO2023057795A1 (fr) 2021-10-07 2023-04-13 Ceske Vysoke Uceni Technicke V Praze Structure de cellule standard cmos avec une dépendance de données inférieure de la consommation d'énergie statique

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JPH01274470A (ja) * 1988-04-26 1989-11-02 Nec Corp バイポーラ・トランジスタ装置及びその製造方法
FR2756100B1 (fr) * 1996-11-19 1999-02-12 Sgs Thomson Microelectronics Transistor bipolaire a emetteur inhomogene dans un circuit integre bicmos
US20010013610A1 (en) * 1999-08-02 2001-08-16 Min-Hwa Chi Vertical bipolar transistor based on gate induced drain leakage current
US6404038B1 (en) * 2000-03-02 2002-06-11 The United States Of America As Represented By The Secretary Of The Navy Complementary vertical bipolar junction transistors fabricated of silicon-on-sapphire utilizing wide base PNP transistors
US6815801B2 (en) * 2003-02-28 2004-11-09 Texas Instrument Incorporated Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer
US20050275027A1 (en) * 2003-09-09 2005-12-15 Micrel, Incorporated ESD protection for integrated circuits
US7847581B2 (en) 2008-04-03 2010-12-07 Stmicroelectronics (Rousset) Sas Device for protecting an integrated circuit against a laser attack
US8450827B2 (en) * 2011-01-25 2013-05-28 Taiwan Semiconductor Manufacturing Company, Ltd. MOS varactor structure and methods
FR2986633B1 (fr) * 2012-02-08 2014-09-05 St Microelectronics Rousset Dispositif de detection d'une attaque par laser dans une puce de circuit integre

Also Published As

Publication number Publication date
US20130200371A1 (en) 2013-08-08
FR2986633A1 (fr) 2013-08-09
US20160133582A1 (en) 2016-05-12
US9070697B2 (en) 2015-06-30
US20150048459A1 (en) 2015-02-19
US8907452B2 (en) 2014-12-09
US9379066B2 (en) 2016-06-28

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