FR2977982B1 - Matrice de photodiodes ingaas - Google Patents
Matrice de photodiodes ingaasInfo
- Publication number
- FR2977982B1 FR2977982B1 FR1156290A FR1156290A FR2977982B1 FR 2977982 B1 FR2977982 B1 FR 2977982B1 FR 1156290 A FR1156290 A FR 1156290A FR 1156290 A FR1156290 A FR 1156290A FR 2977982 B1 FR2977982 B1 FR 2977982B1
- Authority
- FR
- France
- Prior art keywords
- photodiod
- ingaas
- matrix
- photodiod matrix
- ingaas photodiod
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011159 matrix material Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
- H01L27/1465—Infrared imagers of the hybrid type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14694—The active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1156290A FR2977982B1 (fr) | 2011-07-11 | 2011-07-11 | Matrice de photodiodes ingaas |
US14/131,897 US9018727B2 (en) | 2011-07-11 | 2012-07-11 | InGaAs photodiode array |
EP12733733.5A EP2732473A1 (fr) | 2011-07-11 | 2012-07-11 | Matrice de photodiodes ingaas |
PCT/EP2012/063596 WO2013007753A1 (fr) | 2011-07-11 | 2012-07-11 | Matrice de photodiodes ingaas |
JP2014519537A JP2014521216A (ja) | 2011-07-11 | 2012-07-11 | InGaAsフォトダイオード・アレイ |
CN201280034301.5A CN103703573B (zh) | 2011-07-11 | 2012-07-11 | Ingaas光电二极管阵列 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1156290A FR2977982B1 (fr) | 2011-07-11 | 2011-07-11 | Matrice de photodiodes ingaas |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2977982A1 FR2977982A1 (fr) | 2013-01-18 |
FR2977982B1 true FR2977982B1 (fr) | 2014-06-20 |
Family
ID=46506414
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1156290A Expired - Fee Related FR2977982B1 (fr) | 2011-07-11 | 2011-07-11 | Matrice de photodiodes ingaas |
Country Status (5)
Country | Link |
---|---|
US (1) | US9018727B2 (fr) |
EP (1) | EP2732473A1 (fr) |
JP (1) | JP2014521216A (fr) |
FR (1) | FR2977982B1 (fr) |
WO (1) | WO2013007753A1 (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3001578B1 (fr) | 2013-01-31 | 2015-04-03 | New Imaging Technologies Sas | Matrice de photodiode a zone dopee absorbant les charges |
US9935151B2 (en) | 2013-09-25 | 2018-04-03 | Princeton Infrared Technologies, Inc. | Low noise InGaAs photodiode array |
JP2018078245A (ja) * | 2016-11-11 | 2018-05-17 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子、受光素子の製造方法および電子機器 |
WO2018193747A1 (fr) | 2017-04-19 | 2018-10-25 | Sony Semiconductor Solutions Corporation | Dispositif à semi-conducteur, son procédé de fabrication et appareil électronique |
FR3069958B1 (fr) * | 2017-08-03 | 2019-08-30 | Thales | Procede de fabrication ameliore d'un detecteur optique a base de photodiodes et dispositif associe |
JP6909165B2 (ja) * | 2018-01-15 | 2021-07-28 | 富士通株式会社 | 赤外線検出器、撮像素子、撮像システム、赤外線検出器の製造方法 |
JP7291082B2 (ja) | 2018-01-23 | 2023-06-14 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
US10297708B1 (en) | 2018-01-25 | 2019-05-21 | The United States Of America, As Represented By The Secretary Of The Air Force | Surface passivation for PhotoDetector applications |
US20200052012A1 (en) * | 2018-08-07 | 2020-02-13 | Sensors Unlimited, Inc. | Mesa trench etch with stacked sidewall passivation |
JPWO2020059495A1 (ja) | 2018-09-19 | 2021-09-24 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、半導体素子および電子機器 |
EP3869561A4 (fr) | 2018-10-16 | 2022-01-05 | Sony Semiconductor Solutions Corporation | Élément semi-conducteur et son procédé de fabrication |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4396443A (en) | 1982-01-18 | 1983-08-02 | Bell Telephone Laboratories, Incorporated | Reduction of leakage current in InGaAs diodes |
US5053837A (en) | 1987-09-16 | 1991-10-01 | Sumitomo Electric Industries, Ltd. | Ingaas/inp type pin photodiodes |
US6555890B2 (en) * | 2000-05-23 | 2003-04-29 | Sensors Unlimited, Inc. | Method for combined fabrication of indium gallium arsenide/indium phosphide avalanche photodiodes and p-i-n photodiodes |
FR2819941B1 (fr) * | 2001-01-25 | 2003-06-20 | Get Int | Element photoelectrique a tres grande dynamique de fonctionnement |
US6891202B2 (en) | 2001-12-14 | 2005-05-10 | Infinera Corporation | Oxygen-doped Al-containing current blocking layers in active semiconductor devices |
US7115910B2 (en) * | 2003-05-05 | 2006-10-03 | Banpil Photonics, Inc. | Multicolor photodiode array and method of manufacturing thereof |
JP4103885B2 (ja) | 2004-11-16 | 2008-06-18 | 住友電気工業株式会社 | InP系受光素子の亜鉛固相拡散方法とInP系受光素子 |
US20100051809A1 (en) | 2008-09-02 | 2010-03-04 | Princeton Lightwave, Inc. | Monolithic Dual Band Imager |
-
2011
- 2011-07-11 FR FR1156290A patent/FR2977982B1/fr not_active Expired - Fee Related
-
2012
- 2012-07-11 WO PCT/EP2012/063596 patent/WO2013007753A1/fr active Application Filing
- 2012-07-11 US US14/131,897 patent/US9018727B2/en not_active Expired - Fee Related
- 2012-07-11 JP JP2014519537A patent/JP2014521216A/ja active Pending
- 2012-07-11 EP EP12733733.5A patent/EP2732473A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
US20140217543A1 (en) | 2014-08-07 |
CN103703573A (zh) | 2014-04-02 |
US9018727B2 (en) | 2015-04-28 |
WO2013007753A1 (fr) | 2013-01-17 |
FR2977982A1 (fr) | 2013-01-18 |
JP2014521216A (ja) | 2014-08-25 |
EP2732473A1 (fr) | 2014-05-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 6 |
|
PLFP | Fee payment |
Year of fee payment: 7 |
|
PLFP | Fee payment |
Year of fee payment: 8 |
|
ST | Notification of lapse |
Effective date: 20200306 |