CN103703573A - Ingaas光电二极管阵列 - Google Patents
Ingaas光电二极管阵列 Download PDFInfo
- Publication number
- CN103703573A CN103703573A CN201280034301.5A CN201280034301A CN103703573A CN 103703573 A CN103703573 A CN 103703573A CN 201280034301 A CN201280034301 A CN 201280034301A CN 103703573 A CN103703573 A CN 103703573A
- Authority
- CN
- China
- Prior art keywords
- photodiode
- layer
- anode
- array
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002161 passivation Methods 0.000 claims abstract description 75
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 65
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000002019 doping agent Substances 0.000 claims abstract description 14
- 238000009792 diffusion process Methods 0.000 claims abstract description 11
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 62
- 238000003486 chemical etching Methods 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 230000003993 interaction Effects 0.000 abstract 1
- 239000011701 zinc Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 230000004224 protection Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000004297 night vision Effects 0.000 description 3
- 244000045947 parasite Species 0.000 description 3
- 238000006862 quantum yield reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ZBCATMYQYDCTIZ-UHFFFAOYSA-N 4-methylcatechol Chemical compound CC1=CC=C(O)C(O)=C1 ZBCATMYQYDCTIZ-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 235000000177 Indigofera tinctoria Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000005571 horizontal transmission Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229940097275 indigo Drugs 0.000 description 1
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000007811 spectroscopic assay Methods 0.000 description 1
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical group [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
- H01L27/1465—Infrared imagers of the hybrid type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14694—The active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
本发明涉及InGaAs光电二极管阵列(101)并且涉及用于制造InGaAs光电二极管阵列(101)的方法,其中所述阵列包括:阴极,所述阴极包括至少一个磷化铟衬底层(4)和有源铟镓砷化物层(5);以及多个阳极(3),所述多个阳极(3)通过扩散P型掺杂剂至少部分地形成于所述有源铟镓砷化物层中,阳极(3)和阴极之间的相互作用形成光电二极管。根据所述方法,在形成所述阳极(3)的P型掺杂剂的扩散之前在有源层上设置磷化铟钝化层(6),以及执行第一选择性蚀刻以在其整个厚度上去除钝化层(6)的包围每个阳极(3)的区域(10)。
Description
技术领域
本发明涉及光电二极管阵列,并且更具体地涉及基于铟镓砷化物(InGaAs)和磷化铟(InP)的光电二极管阵列,以及其制造工艺。
背景技术
用于由具有小带隙的半导体材料制成光电二极管(经常用于红外光检测)的方法之一包括在两个大带隙半导体材料之间***检测有源小带隙层。两个大带隙半导体层为有效保护/钝化,同时保持对预期被光电二极管检测到的辐射的波长透明。
并且,通过合适的掺杂,在有源层和两个保护/钝化层之间的两个异质结限制有源检测层中的光电荷,并因此提高了内置光电二极管的量子产率。
InGaAs光电二极管为这种临界结构的典型示例。由InGaAs材料组成的检测有源层可具有根据InGaAs中的铟和镓的组分可调节的带隙,对于在大约1.4到3μm的SWIR(短波红外线)带中操作很理想。
磷化铟和铟镓砷化物具有相同的面心立方晶体结构。最常用的组分为In0.53Ga0.47As。晶格尺寸然后与InP衬底的晶格尺寸相匹配,特别是晶格参数。这种晶体兼容性允许在InP衬底上通过外延生长优良品质的有源InGaAs层。In0.53Ga0.47As的带隙为大约0.73eV,能够检测到SWIR带中高达1.68μm的波长。它具有在诸如光谱测定、夜视、废塑料的分拣等应用的领域中不断增长的好处。
保护/钝化层两者通常由InP制成。尤其由于组分In0.53Ga0.47As具有与InP相同的晶格尺寸,这允许从室温开始的非常小的暗电流。
图1示出了光电二极管的阵列1的物理结构。由InGaAs组成的有源层5夹在两个InP层之间。下层实际上形成衬底4,在衬底4上通过复杂的MO-CVD外延形成InGaAs层。然后,该InGaAs层通过由InP组成的薄钝化层6保护,薄钝化层6也通过外延沉积。InP层通常为N型,采用硅掺杂。InGaAs的有源层5可轻微n掺杂或保持准本征。因此,下/上InP层和有源InGaAs层5两者形成该阵列中的光电二极管的共阴极。
通过锌(Zn)的局部扩散形成单独的阳极3。掺杂剂Zn穿过薄钝化InP层6并且穿透有源InGaAs层5。
图2示出了由InGaAs发光二极管的阵列1组成的InGaAs图像传感器,阵列1与读出电路2按照倒装模式连接。在InGaAs阵列传感器中,发光二极管阵列连接至通常由硅制成的读出电路,以读取通过InGaAs光电二极管产生的光电信号。如图2所示,该互连通常通过倒装工艺经由铟珠7实现。SWIR辐射9通过在该光带中透明的磷化铟衬底4到达光电二极管阵列上。
通过在集成模式下操作的检测器,获得与通量和曝光时间的乘积成比例的输出信号。然而,输出信号受到传感器的最大集成能力限制。对于高对比度的场景,往往不能够获得暗区的良好呈现并同时保持明亮区域没有任何饱和度。这个问题对夜视更为严重,具有InGaAs光电二极管的阵列传感器通常设计用于夜视。
通过文献EP1354360大体上提出并且通过本文所附附图的图3从其原理示出光电二极管读取光电信号的另一种方式。文献EP1354360提出光电二极管的太阳能电池操作模式,以便获得相对于入射光辐射59的强度的对数响应。
在该操作模式下,光电二极管51不接收任何外部偏置并且它通过在其结中产生的光电荷正向偏置。在光电二极管上观察到的直接偏置电压与入射光通量的对数成比例。
该对数响应提供在没有任何电和光调节的情况下覆盖对于在自然户外条件下使用SWIR InGaAs传感器不可缺少的超过120dB的操作动态范围的可能性。文献EP1354360还提出开关读出电路55与光电二极管的关联。
如图3所示的图像传感器的使用的原理如下:
a)启用选择信号SEL以通过闭合开关54选择所需光电二极管51。一旦选择了该光电二极管,则启用第一读出信号RD1,该第一读出信号RD1将闭合对应的受控开关,以将来自存储器56中的第一读出的电压存储到存储器中。该第一读出记录图像和固定空间噪声。
b)然后启用复位信号RSI,该信号将使得开关53闭合。因此,光电二极管51被短路,从而模拟在绝对黑暗中的参考图像。
c)接着禁用第一读出信号RD1,以重新断开对应的开关并然后启用第二读出信号RD2,以将第二读出的电压记录到存储器元件57中。因此,固定空间噪声被单独存储在存储器中。
d)通过差分放大器58计算包含在各自的存储器元件56和57中的存储器存储的结果之差。放大器58的输出信号于是对应于没有固定空间噪声的图像。
通过第二读出,产生对应于黑暗条件的零电压。电子黑暗信号提供抑制阵列检测器中的读出链中的信号偏移的可能性。
通过EP1354360提出的原理被应用于InGaAs传感器中并且极佳地运行。但对于日光场景观察到模糊现象。该现象可简单地描述为图像中的空间分辨率的损失。然而,检测器仍根据对数法则对光的变化敏感。在其他类型的光电二极管中不会观察到该现象,诸如基于硅、InSb或MCT的光电二极管。
发明内容
本发明提出针对InGaAs光电二极管阵列中的这种模糊现象的简单而有效的解决方案。本发明提出的解决方案还允许在集成模式下的传统检测器中的图像质量的提高。
为了这个目的,根据第一方面,提出用于制造发光二极管的阵列的方法,包括:
-阴极,该阴极包括至少一个磷化铟衬底层和一个铟镓砷化物有源层,以及
-多个阳极,多个阳极通过P型掺杂剂的扩散至少部分地形成于铟镓砷化物层中,阳极和阴极之间的协作形成光电二极管,
该方法包括以下步骤:
-在形成阳极的P型掺杂剂的扩散之前在有源层上制造N型磷化铟钝化层,以及
-实现钝化层的第一选择性蚀刻,以在其整个厚度上选择性抑制所述钝化层的包围每个阳极的区域。
根据当前方面的本发明通过以下特征单独地或以它们在技术上可能的组合有利地完成:
-第一选择性蚀刻为采用第一选择性化学蚀刻剂进行的化学蚀刻;
-选择性化学蚀刻剂为盐酸和磷酸的溶液;
-该方法进一步包括后续的钝化步骤,该钝化步骤通过对由第一选择性蚀刻暴露的磷化铟钝化层和铟镓砷化物有源层的经蚀刻区域进行N型掺杂;
-该方法进一步包括用于第二选择性蚀刻的后续步骤,该步骤在有源层的整个厚度上选择性抑制有源层的包围每个阳极的区域;
-第二选择性蚀刻为采用第二选择性化学蚀刻剂进行的化学蚀刻;
-第二选择性化学蚀刻剂为包括硫酸和过氧化氢的水溶液;
-第二蚀刻之后是后续的钝化步骤,该步骤通过对由第一选择性蚀刻和第二选择性蚀刻暴露的磷化铟钝化层和铟镓砷化物有源层的经蚀刻区域进行N型掺杂。
优选地,掺杂深度N包括在0.5μm和2μm之间。
根据第二方面,本发明还涉及发光二极管的阵列,包括:
-阴极,该阴极包括至少一个磷化铟衬底层和一个铟镓砷化物有源层,
-多个阳极,多个阳极通过P型掺杂剂的扩散至少部分地形成于有源层中,阳极和阴极之间的协作形成光电二极管,
-N型磷化铟钝化层,阳极通过P型掺杂剂的扩散至少部分地形成于N型磷化铟钝化层中,并且光电二极管的阵列包括包围每个阳极的区域,在该区域中所述钝化层在其整个厚度上是不存在的。
根据第二方面的本发明通过以下特征单独地或以它们在技术上可能的组合有利地完成:
-光电二极管的阵列包括包围每个阳极的区域,在该区域中所述铟镓砷化物有源层在其整个厚度上是不存在的。
-光电二极管的阵列包括通过N型掺杂钝化的与所述包围每个阳极的区域接触的钝化层和有源层的区域。
根据第三方面,本发明还涉及包含读出电路和根据第二方面的发光二极管的阵列的图像传感器。优选地,读出电路为对数电路。
附图说明
根据阅读以下详细描述,本发明的其他方面、目的和优点将更加显而易见。参照与作为非限制实例给出的所附附图一起考虑的该描述,将更好地理解本发明,并且其中:
-图1,已经加以说明,为示出了现有技术的InGaAs光电二极管的阵列的结构的示意图;
-图2,已经加以说明,示出了由InGaAs光电二极管的阵列组成的InGaAs图像传感器,InGaAs光电二极管的阵列与读出硅衬底上的读出电路倒装连接;
-图3,已经加以说明,为用于制造具有在太阳能电池模式下的光电二极管的对数传感器的框图;
-图4示出了现有技术的光电二极管的阵列中的不同结;
-图5为示出了根据本发明的制造方法的框图;
-图6为示出了光电二极管的阵列的结构的示意图,其中钝化层的包围每个阳极的区域已通过第一选择性蚀刻抑制;
-图7示出了通过N型掺杂被暴露区域对由第一选择性蚀刻进行蚀刻的区域进行钝化的示意图;
-图8为示出了光电二极管的阵列的结构的示意图,其中钝化层和有源层的包围每个阳极中的一个区域已通过第一和第二选择性蚀刻抑制;
-图9示出了通过N型掺杂被暴露区域对由第一和第二蚀刻进行蚀刻的区域进行钝化的示意图;
-图10示出了由根据本发明的光电二极管的阵列组成的InGaAs图像传感器,光电二极管的阵列与硅衬底上的读出电路倒装连接。
具体实施方式
在通过图1所示的现有技术的结构中,可以看出,每个光电二极管包含若干个PN结,若干个PN结包括预期的PN结和一定数量的寄生结。通过图4示出了这些PN结。在阳极3和有源层5之间的PN结31是预期的并且形成光电二极管的阵列的二极管。
阳极3和钝化层6之间的横向寄生PN结32经由钝化层在相邻光电二极管之间形成可能的电流路径。
传统的读出电路通过对光电二极管应用反向偏置在电容器中对光电二极管中的反向电流积分。在这种结构中,光电二极管中的横向寄生结32反向偏置,同时具有增加积分电容器中的另外的寄生电流的效果。该寄生电流降低图像质量,但不在相邻光电二极管之间准产生的任何串扰。这些寄生电流可通过对来自读出电路的原始图像进行复杂的图像处理操作而部分地补偿。
当光电二极管在太阳能电池模式下操作时,结通过入射光正向偏置。在这种情况下,横向寄生结32也正向偏置并且其形成相邻光电二极管之间的电流的通道。由于入射光强度增加,因此该正向偏置变得更显著,从而产生大大降低传感器的空间分辨率的模糊现象。
本发明提出允许抑制InGaAs光电二极管的阵列中的横向导电的结构。如文献EP1354360所述的可在太阳能电池模式下使用根据本发明制造的光电二极管的阵列,即使存在非常强的光强度,也没有任何空间分辨率的损失。这种阵列在集成模式下还与传统的读出电路一起提供图像质量的改进,比如,例如由美国的Indigo/FLIR销售的不同读出电路CMOS ISC9705和ISC9809。电路ISC9705直接在电容器上积分来自光电二极管的光电流(直接注入模式)以及电路ISC9809通过运算放大器积分光电流(CTIA模式)。CTIA模式允许促进检测灵敏度的更显著的电荷-电压转换增益。
图5为示出了用于制造根据本发明的光电二极管的阵列的方法的框图。在获得光电二极管阵列结构之后,例如通过:
-在磷化铟的衬底4上外延生长(步骤S1)有源铟镓砷化合物层5,
-在有源层5上外延生长(步骤S2)N型磷化铟的钝化层6,
-通过选择性地将锌作为P型掺杂剂扩散到钝化层6和有源层5中形成(步骤S3)阳极3,
应用第一选择性蚀刻(步骤S4)以在其整个厚度上抑制钝化层6的包围每个阳极3的区域10。该第一选择性蚀刻选择性地抑制钝化层6直到有源层5。
InP层为N型,采用硅掺杂。InGaAs的有源层5可轻微N掺杂或保持准本征。因此,两个下/上InP层和有源InGaAs层5形成该阵列中的光电二极管的共阴极。
图6为示出了光电二极管的阵列101的结构的示意图,其中钝化层6的包围每个阳极的区域10已通过第一选择性蚀刻抑制。应用掩模15以限定钝化层6的将通过第一蚀刻抑制的区域10。因此,光电二极管的阵列包括包围每个阳极的区域10,在该区域10中钝化层6在其整个厚度上是不存在的。
在每个电极3处,通过第一蚀刻抑制钝化层6的包围每一个所述阳极3的区域10提供抑制通过相邻Zn掺杂形成的相邻的阳极3之间的横向电通道的可能性。
该第一蚀刻优选为通过第一选择性化学蚀刻剂实现的化学蚀刻,第一选择性化学蚀刻剂优选为配方HCl:H3PO5的盐酸和磷酸的溶液。
HCl:H3PO5溶液允许选择性地溶解钝化层6,钝化层6由磷化铟InP组成并且蚀刻到到达由铟镓砷化合物InGaAs组成的有源层5停止。通过该选择性蚀刻,可以简单的方式获得钝化层6的抑制。
将被抑制钝化层6的包围阳极3的每一个的区域10不必大并且可能受限于光刻的精度。因此,该区域10可保持远离形成阳极3的Zn扩散,在Zn扩散中发现用于捕获光电荷的区域。因此,优选地,第一选择性蚀刻抑制足够远离阳极3的区域10,使得该第一选择性蚀刻不到达P型阳极3和N型钝化层6之间的PN结。
该第一蚀刻优选为化学蚀刻,但它可任选地为干法蚀刻,例如等离子蚀刻。然而,由于化学蚀刻在蚀刻区域中不产生任何物理损害,因此优选化学蚀刻。在每种情况下,由于通过第一蚀刻产生的缺陷离锌的扩散区域足够距离,因此通过第一蚀刻产生的缺陷仅对光电二极管的暗电流有很小影响。
可在该蚀刻之后应用基于绝缘体(例如,氮化硅SiNx或二氧化硅SiO2)的钝化。然而,基于绝缘体的钝化不允许界面缺陷的数量的充分减少。
因此,优选地通过对由第一蚀刻暴露的钝化层6和有源层5的蚀刻区域11进行N型掺杂应用钝化(步骤S6)。通过图7示出在该N掺杂后的结构,其中通过N型掺杂对与包围每个阳极的区域10接触的钝化区域6和有源区5的区域11进行钝化。
显著地根据蚀刻的类型,化学或干法蚀刻,以及根据光电二极管的尺寸,所述区域11的N掺杂深度可控制在0.5μm和2μm之间。表面生成被快速重新结合到N掺杂区域中。通过有源InGaAs层5内的该N掺杂形成的异质结抵制光电荷朝向Zn扩散区域,即,捕获区域。因此,提高了量子产率。
通过蚀刻暴露的表面上的P型掺杂形成寄生结,寄生结朝向被暴露表面排出光电荷。如果电子/空穴对的表面生成被限制,则量子产率通过这个寄生结遭受朝向表面排出的光电荷。因此,有利地,通过N型掺杂而不是P型掺杂执行钝化。
优选地,在通过N型掺杂的该钝化之前,应用第二选择性蚀刻,在其整个厚度上抑制有源层5的包围每个阳极的区域20(步骤S5),将意识到,在第一蚀刻钝化层6之后,通过图6所示,有源层5在包围阳极的每一个的区域10处暴露。该第二选择性蚀刻在通过第一蚀刻暴露的有源层的区域处选择性地抑制有源层5直到衬底4。并且,优选地,第二选择性蚀刻抑制充分远离阳极3的区域20,使得该第一选择性蚀刻不到达P型阳极和由N型钝化层6和有源层5组成的阴极之间的PN结。
事实上,钝化层6的包围光电二极管的每个阳极3的区域的选择性抑制抑制了相邻光电二极管之间的横向导电。但是在有源铟镓砷化合物InGaAs层5中的光电荷的横向传播还可能降低包括这种光电二极管阵列的传感器的空间分辨率。包围Zn扩散的InGaAs有源层5的部分抑制可对InGaAs传感器的空间分辨率非常有益。
在其整个厚度上抑制包围Zn扩散的铟镓砷化合物InGaAs中的有源层5的冠部20的第二蚀刻也优选为化学蚀刻并且通过第二选择性化学蚀刻剂实施。对于该第二蚀刻,优选使用配方H2SO4:H2O2:H2O的包括的硫酸和过氧化氢的水溶液。这种溶液仅选择性蚀刻由铟镓砷化合物InGaAs组成的有源层5,但保留组成钝化层6和衬底4的磷化铟。
因此,每个光电二极管可与其他光电二极管完全隔绝。图8示出了由第二蚀刻产生的光电二极管的阵列101。光电二极管的阵列101于是包括包围每个阳极的区域20,在该区域20中铟镓砷化物中的有源层5在其整个厚度上是不存在的。
此外,通过H2SO4:H2O2:H2O的该第二蚀刻对形成保护结构不受环境氧化的薄层是有利的。
类似于上述,如果该第一蚀刻优选为化学蚀刻,但它可任选地为干法蚀刻,例如等离子蚀刻。然而,由于化学蚀刻在蚀刻区域中不产生任何物理损害,因此优选化学蚀刻。在每种情况下,由于通过第二蚀刻产生的缺陷离锌扩散区域足够距离,因此通过第二蚀刻产生的缺陷仅对光电二极管的暗电流有很小影响。
可在该蚀刻之后应用基于绝缘体(例如,氮化硅SiNx或二氧化硅SiO2)的钝化。然而,基于绝缘体的钝化不允许界面缺陷的数量的足够减少。
因此,类似于以上讨论的内容,然后应用通过对由第一和第二蚀刻暴露的钝化层6和有源层5的经蚀刻区域进行N掺杂的钝化(步骤S6)。
然后获得通过图9所示的类型的光电二极管阵列结构101,其中通过N型掺杂钝化与包围每个阳极的区域20接触的钝化InP层6和有源InGaAs层5的区域21。顺便,还可看出通过N型掺杂钝化由第二蚀刻暴露的衬底4的区域。
因此,获得光电二极管的阵列101,每个包括:
-阴极,该阴极包括至少一个N型磷化铟衬底层4和有源铟镓砷化物层5有源层,
-多个阳极3,多个阳极通过P型掺杂剂的扩散至少部分地形成于有源层5中,阳极3和阴极之间的协作形成光电二极管,
以及N型磷化铟钝化层6,在磷化铟钝化层6中通过P型掺杂剂的扩散至少部分地形成阳极3,光电二极管的阵列包括包围每个阳极的区域10,在该区域10中所述钝化层6在其整个厚度上是不存在的。
优选地,阵列101具有包围每个阳极3的区域20,在该区域20中铟镓砷化物中的所述有源层5在其整个厚度上是不存在的。
一旦光电二极管的阵列没有任何横向传导,可再次执行用于金属化并且作为芯片颠倒(倒装)与硅衬底的读出电路装配的相同的制造方法。
图10示出了由根据本发明的InGaAs光电二极管的阵列101组成的InGaAs图像传感器,并且更具体地类似于图9中所示的InGaAs光电二极管的阵列101,InGaAs光电二极管的阵列101与读出电路2芯片颠倒连接。在InGaAs阵列传感器中,发光二极管阵列连接至在硅衬底上制成的读出电路,以读取通过InGaAs光电二极管产生的光电信号。如图10所示,该互连通常通过倒装方法经由铟珠7实现。SWIR辐射9通过在该光带中透明的磷化铟衬底4到达光电二极管阵列上。
优选地,读出电路为如上描述和如图3中所讨论的对数读出电路。
Claims (14)
1.一种用于制造光电二极管的阵列(101)的方法,包括:
-阴极,所述阴极包括至少一个磷化铟衬底层(4)和铟镓砷化物有源层(5),以及
-多个阳极(3),所述多个阳极(3)通过P型掺杂剂的扩散至少部分地形成于所述铟镓砷化物有源层中,阳极(3)和所述阴极之间的协作形成光电二极管,
其特征在于,所述方法包括以下步骤:
-在形成所述阳极(3)的P型掺杂剂的扩散之前在有源层(5)上制造N型磷化铟的钝化层(6),以及
-实现钝化层的第一选择性蚀刻,以在其整个厚度上选择性地抑制所述钝化层(6)的包围每个阳极(3)的区域(10)。
2.根据权利要求1所述的制造方法,其中所述第一选择性蚀刻为通过第一选择性化学蚀刻剂进行的化学蚀刻。
3.根据上述权利要求所述的制造方法,其中选择性化学蚀刻剂为盐酸和磷酸的溶液。
4.根据权利要求1至3中的任一项所述的制造方法,进一步包括后续的钝化步骤,所述钝化步骤通过对由所述第一选择性蚀刻暴露的所述磷化铟钝化层(6)和所述铟镓砷化物有源层(5)的经蚀刻区域(11)进行N型掺杂。
5.根据权利要求1至4中的任一项所述的制造方法,进一步包括后续第二选择性蚀刻步骤,所述第二选择性蚀刻步骤在有源层(5)的整个厚度上选择性地抑制有源层(5)的包围每个阳极(3)的区域(20)。
6.根据权利要求5所述的制造方法,其中所述第二选择性蚀刻为通过第二选择性化学蚀刻剂进行的化学蚀刻。
7.根据上述权利要求所述的制造方法,其中所述第二选择性化学蚀刻剂为包括硫酸和过氧化氢的水溶液。
8.根据权利要求5至7中的任一项所述的制造方法,进一步包括后续的钝化步骤,所述钝化步骤通过对由所述第一选择性蚀刻和由所述第二选择性蚀刻暴露的磷化铟钝化层(6)和铟镓砷化物有源层(5)的经蚀刻区域(21)进行N型掺杂。
9.根据权利要求4和8中的任一项所述的制造方法,其中掺杂深度包括在0.5μm和2μm之间。
10.一种光电二极管的阵列(101),包括:
-阴极,所述阴极包括至少一个磷化铟衬底层(4)和一个铟镓砷化物有源层(5),
-多个阳极,所述多个阳极通过P型掺杂剂的扩散至少部分地形成于有源层(5)中,阳极(3)和阴极之间的协作形成光电二极管,
其特征在于,所述阵列进一步包括N型磷化铟钝化层(6),在所述磷化铟钝化层(6)中通过P型掺杂剂的扩散至少部分地形成阳极(3),并且在于,二极管的阵列进一步包括包围每个阳极的区域(10),在该区域(10)中所述钝化层(6)在其整个厚度上是不存在的。
11.根据权利要求10所述的光电二极管的阵列,包括包围每个阳极(3)的区域(20),其中在铟镓砷化合物中的所述有源层(5)在其整个厚度上是不存在的。
12.根据权利要求10或11所述的光电二极管的阵列,其中与包围每个电极的所述区域(10,20)接触的所述钝化层(6)和所述有源层(5)的区域(11,21)通过N型掺杂钝化。
13.一种包含读取电路(2)和根据权利要求10至12的任一项的光电二极管的阵列(101)的图像传感器。
14.根据上述权利要求所述的图像传感器,其中所述读出电路(2)为对数电路。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1156290A FR2977982B1 (fr) | 2011-07-11 | 2011-07-11 | Matrice de photodiodes ingaas |
FR1156290 | 2011-07-11 | ||
PCT/EP2012/063596 WO2013007753A1 (fr) | 2011-07-11 | 2012-07-11 | Matrice de photodiodes ingaas |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103703573A true CN103703573A (zh) | 2014-04-02 |
CN103703573B CN103703573B (zh) | 2016-11-30 |
Family
ID=
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115706177A (zh) * | 2021-08-09 | 2023-02-17 | 北京一径科技有限公司 | 光电探测阵列、光电探测器装置、设备及存储介质 |
US11961863B2 (en) | 2018-09-19 | 2024-04-16 | Sony Semiconductor Solutions Corporation | Imaging element, semiconductor element, and electronic apparatus |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1327617A (zh) * | 1999-10-18 | 2001-12-19 | 日本板硝子株式会社 | 受光器件阵列和受光器件阵列芯片 |
CN1386305A (zh) * | 2000-07-18 | 2002-12-18 | 日本板硝子株式会社 | 受光元件阵列 |
US20030173571A1 (en) * | 2001-12-14 | 2003-09-18 | Kish Fred A. | Oxygen-doped Al-containing current blocking layers in active semiconductor devices |
EP1354360B1 (fr) * | 2001-01-25 | 2008-08-13 | New Imaging Technologies | Element photoelectrique a tres grande dynamique de fonctionnement |
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1327617A (zh) * | 1999-10-18 | 2001-12-19 | 日本板硝子株式会社 | 受光器件阵列和受光器件阵列芯片 |
CN1386305A (zh) * | 2000-07-18 | 2002-12-18 | 日本板硝子株式会社 | 受光元件阵列 |
EP1354360B1 (fr) * | 2001-01-25 | 2008-08-13 | New Imaging Technologies | Element photoelectrique a tres grande dynamique de fonctionnement |
US20030173571A1 (en) * | 2001-12-14 | 2003-09-18 | Kish Fred A. | Oxygen-doped Al-containing current blocking layers in active semiconductor devices |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11961863B2 (en) | 2018-09-19 | 2024-04-16 | Sony Semiconductor Solutions Corporation | Imaging element, semiconductor element, and electronic apparatus |
CN115706177A (zh) * | 2021-08-09 | 2023-02-17 | 北京一径科技有限公司 | 光电探测阵列、光电探测器装置、设备及存储介质 |
Also Published As
Publication number | Publication date |
---|---|
US20140217543A1 (en) | 2014-08-07 |
US9018727B2 (en) | 2015-04-28 |
WO2013007753A1 (fr) | 2013-01-17 |
FR2977982A1 (fr) | 2013-01-18 |
JP2014521216A (ja) | 2014-08-25 |
FR2977982B1 (fr) | 2014-06-20 |
EP2732473A1 (fr) | 2014-05-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9018727B2 (en) | InGaAs photodiode array | |
JP6112472B2 (ja) | 受光デバイスの製造方法 | |
US6573581B1 (en) | Reduced dark current pin photo diodes using intentional doping | |
US10090356B2 (en) | Low noise InGaAs photodiode array | |
JP2011501415A (ja) | フォトディテクタアレイおよび半導体イメージインテンシファイア | |
Rouvié et al. | InGaAs focal plane array developments at III-V Lab | |
US8354324B2 (en) | Mesa heterojunction phototransistor and method for making same | |
JPWO2011089949A1 (ja) | 化合物半導体受光素子アレイ | |
Åberg et al. | A low dark current and high quantum efficiency monolithic germanium-on-silicon CMOS imager technology for day and night imaging applications | |
US20110101483A1 (en) | Two colour photon detector | |
US7696593B2 (en) | PIN-type photo detecting element with three semiconductor layers, and window semiconductor layer having controlled thickness | |
JP2013175686A (ja) | 受光素子、その製造方法、および検出装置 | |
Cheng et al. | 2.45-μm 1280× 1024 InGaAs focal plane array with 15-μm pitch for extended SWIR imaging | |
US10068942B2 (en) | Photodiode array having a charge-absorbing doped region | |
KR20200072572A (ko) | Cmos 센서용 게이트-제어 전하 변조 디바이스 | |
US8963274B2 (en) | Epitaxial structure for vertically integrated charge transfer gate technology in optoelectronic materials | |
CN103703573B (zh) | Ingaas光电二极管阵列 | |
KR100636393B1 (ko) | 이미지 센서 | |
US11227968B2 (en) | Method for improved manufacturing of a photodiode-based optical sensor and associated device | |
US20150279895A1 (en) | Image sensor | |
KR100718875B1 (ko) | 이미지 센서용 포토다이오드의 제조 방법 및 그 포토다이오드 | |
CN217983373U (zh) | 光敏传感器 | |
US20220254818A1 (en) | Image sensing device | |
Boisvert et al. | Characterization of InAlAs/InGaAs APD arrays for SWIR imaging applications | |
US20090250780A1 (en) | High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161130 Termination date: 20190711 |
|
CF01 | Termination of patent right due to non-payment of annual fee |