FR2895805B1 - Substrat de reseau de transistors en couches minces pour un afficheur a cristaux liquides et son procede de fabrication - Google Patents
Substrat de reseau de transistors en couches minces pour un afficheur a cristaux liquides et son procede de fabricationInfo
- Publication number
- FR2895805B1 FR2895805B1 FR0611255A FR0611255A FR2895805B1 FR 2895805 B1 FR2895805 B1 FR 2895805B1 FR 0611255 A FR0611255 A FR 0611255A FR 0611255 A FR0611255 A FR 0611255A FR 2895805 B1 FR2895805 B1 FR 2895805B1
- Authority
- FR
- France
- Prior art keywords
- thin film
- film transistor
- manufacturing
- liquid crystal
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000004973 liquid crystal related substance Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/124—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode interdigital
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050134119A KR20070071012A (ko) | 2005-12-29 | 2005-12-29 | 박막 트랜지스터 어레이 기판 이의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2895805A1 FR2895805A1 (fr) | 2007-07-06 |
FR2895805B1 true FR2895805B1 (fr) | 2013-09-27 |
Family
ID=37712240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0611255A Expired - Fee Related FR2895805B1 (fr) | 2005-12-29 | 2006-12-22 | Substrat de reseau de transistors en couches minces pour un afficheur a cristaux liquides et son procede de fabrication |
Country Status (6)
Country | Link |
---|---|
US (2) | US7923309B2 (fr) |
JP (1) | JP5220308B2 (fr) |
KR (1) | KR20070071012A (fr) |
CN (1) | CN1992293B (fr) |
FR (1) | FR2895805B1 (fr) |
GB (1) | GB2434687B (fr) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070071012A (ko) * | 2005-12-29 | 2007-07-04 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 어레이 기판 이의 제조 방법 |
KR101192750B1 (ko) * | 2005-12-30 | 2012-10-18 | 엘지디스플레이 주식회사 | Tft 어레이 기판 및 그 제조방법 |
KR101473795B1 (ko) * | 2008-09-03 | 2014-12-17 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그의 제조 방법 |
CN101847640B (zh) * | 2009-03-27 | 2011-12-28 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法和液晶面板 |
JP2012038924A (ja) * | 2010-08-06 | 2012-02-23 | Sony Corp | 半導体装置、表示装置、および電子機器 |
KR20120058106A (ko) * | 2010-11-29 | 2012-06-07 | 삼성전자주식회사 | 액정 표시 장치 및 그 제조 방법 |
JP5845035B2 (ja) * | 2011-09-28 | 2016-01-20 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
CN103309095B (zh) | 2013-05-30 | 2015-08-26 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
JP6324098B2 (ja) * | 2014-02-06 | 2018-05-16 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
CN104503169B (zh) * | 2014-11-21 | 2018-03-06 | 深圳市华星光电技术有限公司 | 垂直配向型液晶显示器 |
CN105988251A (zh) * | 2015-03-05 | 2016-10-05 | 群创光电股份有限公司 | 显示面板及显示装置 |
TWI551928B (zh) | 2015-03-05 | 2016-10-01 | 群創光電股份有限公司 | 顯示面板及顯示裝置 |
KR102431350B1 (ko) * | 2015-12-07 | 2022-08-11 | 티씨엘 차이나 스타 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | 액정 표시 장치 및 이의 제조 방법 |
CN106328587A (zh) * | 2016-08-26 | 2017-01-11 | 深圳市华星光电技术有限公司 | 一种阵列基板及其制作方法、液晶显示面板 |
CN106483728B (zh) | 2017-01-04 | 2019-05-21 | 京东方科技集团股份有限公司 | 像素结构、阵列基板和显示装置 |
JP7344851B2 (ja) * | 2018-11-28 | 2023-09-14 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
CN110286796B (zh) * | 2019-06-27 | 2023-10-27 | 京东方科技集团股份有限公司 | 电子基板及其制作方法、显示面板 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05175500A (ja) * | 1991-12-26 | 1993-07-13 | Kyocera Corp | アクティブマトリックス基板の製造方法 |
US6359672B2 (en) * | 1997-10-20 | 2002-03-19 | Guardian Industries Corp. | Method of making an LCD or X-ray imaging device with first and second insulating layers |
JP2000029053A (ja) | 1998-07-14 | 2000-01-28 | Mitsubishi Electric Corp | 液晶表示装置およびその製造方法 |
CN1139837C (zh) * | 1998-10-01 | 2004-02-25 | 三星电子株式会社 | 液晶显示器用薄膜晶体管阵列基板及其制造方法 |
JP5408829B2 (ja) * | 1999-12-28 | 2014-02-05 | ゲットナー・ファンデーション・エルエルシー | アクティブマトリックス基板の製造方法 |
JP2001257350A (ja) * | 2000-03-08 | 2001-09-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2001339072A (ja) * | 2000-03-15 | 2001-12-07 | Advanced Display Inc | 液晶表示装置 |
JP4683688B2 (ja) * | 2000-03-16 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
JP2002107762A (ja) * | 2000-10-02 | 2002-04-10 | Sharp Corp | 液晶用マトリクス基板の製造方法 |
US20020060322A1 (en) * | 2000-11-20 | 2002-05-23 | Hiroshi Tanabe | Thin film transistor having high mobility and high on-current and method for manufacturing the same |
KR100750872B1 (ko) * | 2001-01-18 | 2007-08-22 | 엘지.필립스 엘시디 주식회사 | 액정표장치용 어레이기판과 그 제조방법 |
KR100499371B1 (ko) * | 2002-04-17 | 2005-07-04 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
KR100476366B1 (ko) * | 2002-04-17 | 2005-03-16 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
KR100887671B1 (ko) * | 2002-12-23 | 2009-03-11 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
KR100904270B1 (ko) * | 2002-12-31 | 2009-06-25 | 엘지디스플레이 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
KR100741890B1 (ko) * | 2003-06-26 | 2007-07-23 | 엘지.필립스 엘시디 주식회사 | 횡전계 방식의 액정표시장치 및 그의 제조방법 |
KR100541534B1 (ko) * | 2003-06-30 | 2006-01-11 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
US7279370B2 (en) * | 2003-10-11 | 2007-10-09 | Lg.Philips Lcd Co., Ltd. | Thin film transistor array substrate and method of fabricating the same |
CN100371813C (zh) * | 2003-10-14 | 2008-02-27 | Lg.菲利浦Lcd株式会社 | 面内切换型液晶显示装置中的液晶显示板及其制造方法 |
TWI234043B (en) * | 2003-11-26 | 2005-06-11 | Hannstar Display Corp | Method of manufacturing liquid crystal display |
KR101086476B1 (ko) * | 2004-04-14 | 2011-11-25 | 엘지디스플레이 주식회사 | 액정표시패널 및 그 제조방법 |
TWI248684B (en) * | 2004-11-26 | 2006-02-01 | Innolux Display Corp | Liquid crystal display device |
US20060127817A1 (en) * | 2004-12-10 | 2006-06-15 | Eastman Kodak Company | In-line fabrication of curved surface transistors |
KR100614323B1 (ko) * | 2004-12-30 | 2006-08-21 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조방법 |
KR100726090B1 (ko) * | 2004-12-30 | 2007-06-08 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
KR101127839B1 (ko) * | 2005-04-11 | 2012-03-21 | 엘지디스플레이 주식회사 | 횡전계형 액정 표시 장치 |
KR101225440B1 (ko) * | 2005-06-30 | 2013-01-25 | 엘지디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
KR20070071012A (ko) * | 2005-12-29 | 2007-07-04 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 어레이 기판 이의 제조 방법 |
KR101221261B1 (ko) * | 2006-02-15 | 2013-01-11 | 엘지디스플레이 주식회사 | 액정 표시 장치용 어레이 기판 및 그 제조 방법 |
-
2005
- 2005-12-29 KR KR1020050134119A patent/KR20070071012A/ko not_active Application Discontinuation
-
2006
- 2006-12-07 JP JP2006330266A patent/JP5220308B2/ja not_active Expired - Fee Related
- 2006-12-14 US US11/639,776 patent/US7923309B2/en not_active Expired - Fee Related
- 2006-12-15 GB GB0625091A patent/GB2434687B/en not_active Expired - Fee Related
- 2006-12-22 FR FR0611255A patent/FR2895805B1/fr not_active Expired - Fee Related
- 2006-12-28 CN CN200610168254XA patent/CN1992293B/zh not_active Expired - Fee Related
-
2010
- 2010-04-29 US US12/770,036 patent/US8058651B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20100213463A1 (en) | 2010-08-26 |
US7923309B2 (en) | 2011-04-12 |
GB2434687B (en) | 2008-03-05 |
JP2007183604A (ja) | 2007-07-19 |
CN1992293A (zh) | 2007-07-04 |
FR2895805A1 (fr) | 2007-07-06 |
GB2434687A (en) | 2007-08-01 |
US20070164284A1 (en) | 2007-07-19 |
JP5220308B2 (ja) | 2013-06-26 |
CN1992293B (zh) | 2012-08-29 |
US8058651B2 (en) | 2011-11-15 |
GB0625091D0 (en) | 2007-01-24 |
KR20070071012A (ko) | 2007-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2895805B1 (fr) | Substrat de reseau de transistors en couches minces pour un afficheur a cristaux liquides et son procede de fabrication | |
TWI366052B (en) | Liquid crystal display, thin film transistor array panel therefor, and manufacturing method thereof | |
FR2903226B1 (fr) | Transistor en couche mince,son procede de fabrication et dispositif d'affichage comportant un tel transistor. | |
FR2899982B1 (fr) | Substrat de reseau, son procede de fabrication et dispositif d'affichage a cristaux liquides le comportant | |
TW200701470A (en) | Liquid crystal display panel and method of fabricating the same | |
TW200603070A (en) | Thin-film transistor circuit, design method for thin-film transistor, design program for thin-film transistor circuit, design program recording medium, design library database, and display device | |
TW200608576A (en) | Method for fabricating organic thin film transistor and method for fabricating liquid crystal display device using the same | |
FR2899695B1 (fr) | Substrat de reseau pour dispositif d'affichage a cristaux liquides et procede de fabrication de celui-ci. | |
AU2003247167A1 (en) | Thin film transistor, liquid crystal display apparatus, manufacturing method of thin film transistor, and manufacturing method of liquid crystal display apparatus | |
FR2879763B1 (fr) | Dispositif d'ecran a cristaux liquides et procede de fabrication de son substrat a matrice | |
TW200703735A (en) | Organic thin film transistor array panel and method of manufacturing the same | |
FR2883663B1 (fr) | Procede de fabrication d'une cellule photovoltaique a base de silicium en couche mince. | |
TW200638092A (en) | Liquid crystal display device and method for fabricating the same | |
TWI349817B (en) | Thin film transistor array substrate, manufacturing method for the same, and transflective liquid crystal display | |
FR2885422B1 (fr) | Dispositif d'affichage a cristaux liquides et son procede de fabrication | |
DE602005019839D1 (de) | Herstellungsmethoden für Dünnschichttransistor und Flachbildschirm | |
FR2895836B1 (fr) | Transistor a couches minces organiques et procede pour sa fabrication. | |
TW200627647A (en) | Thin film transistor array panel and manufacturing method thereof | |
FR2873826B1 (fr) | Substrat de matrice pour un ecran a cristaux liquides et procede de fabrication de ce dernier | |
GB0424721D0 (en) | Liquid crystal display panel and fabricating method thereof | |
TW200702807A (en) | Method of manufacturing liquid crystal display device | |
FR2875308B1 (fr) | Substrat pour dispositif d'affichage a cristaux liquides et procede de fabrication de celui-ci | |
TW200634382A (en) | Liquid crystal display device and method of fabricating the same | |
FR2890192B1 (fr) | Panneau d'affichage a cristaux liquides a alignement vertical multidomaine, reseau de transistors en couches minces et procede de fabrication de ces derniers | |
TW200712614A (en) | Liquid crystal display panel and manufacturing method of substrate thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
PLFP | Fee payment |
Year of fee payment: 10 |
|
PLFP | Fee payment |
Year of fee payment: 11 |
|
PLFP | Fee payment |
Year of fee payment: 12 |
|
ST | Notification of lapse |
Effective date: 20190906 |