FR2885910A1 - Composition aqueuse de nettoyage pour le traitement du cuivre de semi-conducteurs - Google Patents

Composition aqueuse de nettoyage pour le traitement du cuivre de semi-conducteurs

Info

Publication number
FR2885910A1
FR2885910A1 FR0651858A FR0651858A FR2885910A1 FR 2885910 A1 FR2885910 A1 FR 2885910A1 FR 0651858 A FR0651858 A FR 0651858A FR 0651858 A FR0651858 A FR 0651858A FR 2885910 A1 FR2885910 A1 FR 2885910A1
Authority
FR
France
Prior art keywords
chemicomechanical
water
cleaning composition
organic base
containing nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR0651858A
Other languages
English (en)
Other versions
FR2885910B1 (fr
Inventor
Chien Ching Chien
Wen Cheng Liu
Jing Chiuan Shiue
Teng Yan Huo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials Taiwan Co Ltd
Original Assignee
Epoch Material Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epoch Material Co Ltd filed Critical Epoch Material Co Ltd
Publication of FR2885910A1 publication Critical patent/FR2885910A1/fr
Application granted granted Critical
Publication of FR2885910B1 publication Critical patent/FR2885910B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

L'invention concerne une composition aqueuse de nettoyage utilisée en post-planarisation mécano-chimique qui comprend (a) 0,1 à 15 % en masse d'une base organique hétérocyclique contenant de l'azote ; (b) 0,1 à 35 % en masse d'une alcool amine ; et (c) de l'eau. Par contact avec des plaquettes semi-conductrices contenant du cuivre qui ont été traitées par planarisation mécano-chimique pendant une durée efficace, la composition aqueuse de nettoyage peut efficacement retirer les contaminants résiduels de la surface des plaquettes et conférer simultanément aux plaquettes semiconductrices contenant du cuivre une meilleure rugosité.
FR0651858A 2005-05-19 2006-05-19 Composition aqueuse de nettoyage pour le traitement du cuivre de semi-conducteurs Expired - Fee Related FR2885910B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094116223A TWI282363B (en) 2005-05-19 2005-05-19 Aqueous cleaning composition for semiconductor copper processing

Publications (2)

Publication Number Publication Date
FR2885910A1 true FR2885910A1 (fr) 2006-11-24
FR2885910B1 FR2885910B1 (fr) 2012-02-03

Family

ID=37388370

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0651858A Expired - Fee Related FR2885910B1 (fr) 2005-05-19 2006-05-19 Composition aqueuse de nettoyage pour le traitement du cuivre de semi-conducteurs

Country Status (8)

Country Link
US (1) US8063006B2 (fr)
JP (1) JP4475538B2 (fr)
KR (1) KR101083474B1 (fr)
DE (1) DE102006023506B4 (fr)
FR (1) FR2885910B1 (fr)
IT (1) ITMI20060968A1 (fr)
SG (1) SG127840A1 (fr)
TW (1) TWI282363B (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2633163C (fr) * 2005-12-12 2013-11-19 Vitech International, Inc. Compositions nettoyantes, non corrosives et polyvalentes, et leurs procedes d'utilisation
KR100729235B1 (ko) * 2006-06-01 2007-06-15 삼성전자주식회사 프로브 카드용 세정액 조성물 및 이를 이용한 프로브카드의 세정 방법
TWI437093B (zh) * 2007-08-03 2014-05-11 Epoch Material Co Ltd 半導體銅製程用水相清洗組合物
JP6066552B2 (ja) * 2011-12-06 2017-01-25 関東化學株式会社 電子デバイス用洗浄液組成物
JP6751015B2 (ja) 2013-03-15 2020-09-02 キャボット マイクロエレクトロニクス コーポレイション 銅の化学的機械的平坦化後のための水性清浄化組成物
JP6203525B2 (ja) 2013-04-19 2017-09-27 関東化學株式会社 洗浄液組成物
US10961624B2 (en) * 2019-04-02 2021-03-30 Gelest Technologies, Inc. Process for pulsed thin film deposition

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
JPH10171130A (ja) * 1996-12-10 1998-06-26 Fuji Film Oorin Kk フォトレジスト剥離液
US6268323B1 (en) * 1997-05-05 2001-07-31 Arch Specialty Chemicals, Inc. Non-corrosive stripping and cleaning composition
JPH11349925A (ja) 1998-06-05 1999-12-21 Fujimi Inc エッジポリッシング用組成物
JP4224651B2 (ja) * 1999-02-25 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離剤およびそれを用いた半導体素子の製造方法
DE19947845A1 (de) * 1999-10-05 2001-04-12 Basf Ag Verfahren zum Entfernen von COS aus einem Kohlenwasserstoff-Fluidstrom und Waschflüssikgkeit zur Verwendung in derartigen Verfahren
US6992050B2 (en) * 2000-06-28 2006-01-31 Nec Corporation Stripping agent composition and method of stripping
MY143399A (en) * 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
DE10210729A1 (de) * 2002-03-12 2003-10-02 Basf Ag Verfahren zum Entsäuern eines Fluidstroms und Waschflüssigkeit zur Verwendung in einem derartigen Verfahren
JP4304909B2 (ja) * 2002-04-03 2009-07-29 東ソー株式会社 洗浄剤及びそれを用いた洗浄方法
JP2004101849A (ja) * 2002-09-09 2004-04-02 Mitsubishi Gas Chem Co Inc 洗浄剤組成物
US6803353B2 (en) * 2002-11-12 2004-10-12 Atofina Chemicals, Inc. Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
JP4359754B2 (ja) * 2003-07-03 2009-11-04 三菱瓦斯化学株式会社 基板の洗浄剤
DE10338563A1 (de) 2003-08-22 2005-03-17 Basf Ag Verfahren zum Entsäuern eines Fluidstroms mittels Membraneinheiten aus inerten Gehäusen
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US6946396B2 (en) * 2003-10-30 2005-09-20 Nissan Chemical Indusries, Ltd. Maleic acid and ethylene urea containing formulation for removing residue from semiconductor substrate and method for cleaning wafer
JP2005336342A (ja) * 2004-05-27 2005-12-08 Tosoh Corp 洗浄用組成物
US7700533B2 (en) * 2005-06-23 2010-04-20 Air Products And Chemicals, Inc. Composition for removal of residue comprising cationic salts and methods using same

Also Published As

Publication number Publication date
FR2885910B1 (fr) 2012-02-03
US8063006B2 (en) 2011-11-22
KR20060120443A (ko) 2006-11-27
SG127840A1 (en) 2006-12-29
JP2007002227A (ja) 2007-01-11
JP4475538B2 (ja) 2010-06-09
TWI282363B (en) 2007-06-11
ITMI20060968A1 (it) 2006-11-20
US20070066508A1 (en) 2007-03-22
DE102006023506A1 (de) 2007-01-11
TW200641121A (en) 2006-12-01
KR101083474B1 (ko) 2011-11-16
DE102006023506B4 (de) 2015-06-18

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Effective date: 20160129