FR2881273B1 - Procede de formation d'un substrat semi-conducteur de circuit integre - Google Patents

Procede de formation d'un substrat semi-conducteur de circuit integre

Info

Publication number
FR2881273B1
FR2881273B1 FR0500674A FR0500674A FR2881273B1 FR 2881273 B1 FR2881273 B1 FR 2881273B1 FR 0500674 A FR0500674 A FR 0500674A FR 0500674 A FR0500674 A FR 0500674A FR 2881273 B1 FR2881273 B1 FR 2881273B1
Authority
FR
France
Prior art keywords
integrated circuit
semiconductor substrate
circuit semiconductor
forming integrated
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0500674A
Other languages
English (en)
Other versions
FR2881273A1 (fr
Inventor
Michel Marty
Gregory Avenier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0500674A priority Critical patent/FR2881273B1/fr
Priority to US11/335,857 priority patent/US7476574B2/en
Publication of FR2881273A1 publication Critical patent/FR2881273A1/fr
Application granted granted Critical
Publication of FR2881273B1 publication Critical patent/FR2881273B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76286—Lateral isolation by refilling of trenches with polycristalline material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR0500674A 2005-01-21 2005-01-21 Procede de formation d'un substrat semi-conducteur de circuit integre Expired - Fee Related FR2881273B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0500674A FR2881273B1 (fr) 2005-01-21 2005-01-21 Procede de formation d'un substrat semi-conducteur de circuit integre
US11/335,857 US7476574B2 (en) 2005-01-21 2006-01-19 Method for forming an integrated circuit semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0500674A FR2881273B1 (fr) 2005-01-21 2005-01-21 Procede de formation d'un substrat semi-conducteur de circuit integre

Publications (2)

Publication Number Publication Date
FR2881273A1 FR2881273A1 (fr) 2006-07-28
FR2881273B1 true FR2881273B1 (fr) 2007-05-04

Family

ID=34954337

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0500674A Expired - Fee Related FR2881273B1 (fr) 2005-01-21 2005-01-21 Procede de formation d'un substrat semi-conducteur de circuit integre

Country Status (2)

Country Link
US (1) US7476574B2 (fr)
FR (1) FR2881273B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2881273B1 (fr) * 2005-01-21 2007-05-04 St Microelectronics Sa Procede de formation d'un substrat semi-conducteur de circuit integre
US8624349B1 (en) * 2010-10-11 2014-01-07 Maxim Integrated Products, Inc. Simultaneous isolation trench and handle wafer contact formation
US9041105B2 (en) 2012-07-20 2015-05-26 International Business Machines Corporation Integrated circuit including transistor structure on depleted silicon-on-insulator, related method and design structure

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US6476445B1 (en) * 1999-04-30 2002-11-05 International Business Machines Corporation Method and structures for dual depth oxygen layers in silicon-on-insulator processes
FR2795555B1 (fr) * 1999-06-28 2002-12-13 France Telecom Procede de fabrication d'un dispositif semi-conducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique
US6333532B1 (en) * 1999-07-16 2001-12-25 International Business Machines Corporation Patterned SOI regions in semiconductor chips
JP2001102597A (ja) * 1999-09-30 2001-04-13 Fuji Electric Co Ltd 半導体構造およびその製造方法
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US6429477B1 (en) * 2000-10-31 2002-08-06 International Business Machines Corporation Shared body and diffusion contact structure and method for fabricating same
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JP2002299591A (ja) * 2001-03-30 2002-10-11 Toshiba Corp 半導体装置
KR100414217B1 (ko) * 2001-04-12 2004-01-07 삼성전자주식회사 게이트 올 어라운드형 트랜지스터를 가진 반도체 장치 및그 형성 방법
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KR100470832B1 (ko) * 2002-08-12 2005-03-10 한국전자통신연구원 두께가 얇은 ｓｏｉ층을 이용한 쇼트키 장벽 관통트랜지스터 및 그 제조방법
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JP2005158952A (ja) * 2003-11-25 2005-06-16 Toshiba Corp 半導体装置及びその製造方法
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JP4644577B2 (ja) * 2005-09-30 2011-03-02 セイコーエプソン株式会社 半導体装置および半導体装置の製造方法
JP4940797B2 (ja) * 2005-10-03 2012-05-30 セイコーエプソン株式会社 半導体装置の製造方法
US7659172B2 (en) * 2005-11-18 2010-02-09 International Business Machines Corporation Structure and method for reducing miller capacitance in field effect transistors
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KR100763542B1 (ko) * 2006-10-30 2007-10-05 삼성전자주식회사 다중 채널 모오스 트랜지스터를 포함하는 반도체 장치의제조 방법
JP2008135711A (ja) * 2006-11-01 2008-06-12 Seiko Epson Corp 半導体装置の製造方法、および半導体装置
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JP4285536B2 (ja) * 2006-12-19 2009-06-24 セイコーエプソン株式会社 半導体装置の製造方法
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Also Published As

Publication number Publication date
FR2881273A1 (fr) 2006-07-28
US7476574B2 (en) 2009-01-13
US20060189157A1 (en) 2006-08-24

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Legal Events

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Effective date: 20120928